Effect of vector asymmetry of radially polarized beams in solid immersion microscopy

Generalized vector wave theory for ultrahigh resolution confocal optical microscopy

Polarization modulation of a tightly focused beam in a confocal imaging scheme is considered for incident and collected light fields. Rigorous vector wave theory of a confocal optical microscopy is developed, which provides clear physical pictures without the requirement for fragmentary calculations. Multiple spatial modulations on polarization, phase, or amplitude of the illuminating and the detected beams can be mathematically described by a uniform expression. Linear and nonlinear excitation schemes are derived with tailored excitation and detection fields within this generalized theory, whose results show that the ultimate resolution achieved with the linear excitation can reach one-fifth of the excitation wavelength (or λ/5), while the nonlinear excitation scheme gives rise to a resolution better than λ/12 for two-photon fluorescence excitation and λ/20 for three-photon fluorescence excitation. Hence the resolution of optical microscopy with a near-infrared excitation can routinely reach sub-60 nm. In addition, simulations for confocal laser scanning microscopy are carried out with the linear excitation scheme and the fluorescent one, respectively.

High-resolution subsurface microscopy of CMOS integrated circuits using radially polarized light

Under high numerical aperture (NA) conditions, a linearly polarized plane wave focuses to a spot that is extended along the E-field vector, but radially polarized light is predicted to form a circular spot whose diameter equals the narrower dimension obtained with linear polarization. This effect provides an opportunity for improved resolution in high-NA microscopy, and here we present a performance study of subsurface two-photon optical-beam-induced current solid-immersion-lens microscopy of a complementary metal-oxide semiconductor integrated circuit, showing a resolution improvement by using radially polarized illumination. By comparing images of the same structural features we show that radial polarization achieves a resolution of 126 nm, while linear polarization achieves resolutions of 122 and 165 nm, depending on the E-field orientation. These results are consistent with the theoretically expected behavior and are supported by high-resolution images which show superior feature definition using radial polarization.

Dictionary-based image reconstruction for superresolution in integrated circuit imaging

Resolution improvement through signal processing techniques for integrated circuit imaging is becoming more crucial as the rapid decrease in integrated circuit dimensions continues. Although there is a significant effort to push the limits of optical resolution for backside fault analysis through the use of solid immersion lenses, higher order laser beams, and beam apodization, signal processing techniques are required for additional improvement. In this work, we propose a sparse image reconstruction framework which couples overcomplete dictionary-based representation with a physics-based forward model to improve resolution and localization accuracy in high numerical aperture confocal microscopy systems for backside optical integrated circuit analysis. The effectiveness of the framework is demonstrated on experimental data.

Harnessing the point-spread function for high-resolution far-field optical microscopy

The resolution limit of far-field optical microscopy is reexamined with a full vectorial theoretical analysis. A highly symmetric excitation optical field and optimized detection scheme are proposed to harness the total point-spread function for a microscopic system. Spatial resolution of better than 1/6λ is shown to be obtainable, giving rise to a resolution better than 100 nm with visible light excitation. The experimental measurement is applied to examine nonfluorescent samples. A lateral resolution of 1/5λ is obtained in truly far-field optical microscopy with a working distance greater than ∼500λ. Comparison is made for the far-field microscopic measurement with that of a nearfield scanning optical microscopy, showing that the proposed scheme provides a better image quality.