Trade-off between optical modulation amplitude and modulation bandwidth of silicon micro-ring modulators

Compact silicon-based Ka-band tunable-phase photonic microwave frequency downconverter

In this paper, a compact silicon-based photonic microwave frequency downconverter with broadband operation capability and continuous phase shift tunability is proposed and experimentally demonstrated. The photonic converter mainly comprises two micro-ring modulators (MRMs) connected in parallel and a cascaded resonator-based optical bandpass filter (OBPF) whose size is merely 200 × 700 µm2. In the proposed device, a radio frequency (RF) signal and a local oscillator (LO) signal drive the two MRMs for realizing the electro-optic conversion. The OBPF is utilized for selecting the first-order sidebands of both RF and LO signals. By manipulating the phase difference between the RF and LO optical sidebands through thermal-optic effect, the phase of the obtained intermediate frequency (IF) signal from a photodiode can be tuned continuously. Experimental results demonstrate a 137° phase shift while the RF signals of 20 and 40 GHz are downconverted to an IF signal of 0.4 GHz, which indicates the photonic microwave downconverter can be used in the Ka-band phased-array receiver.

Monolithic optical PAM-4 transmitter with autonomous carrier tracking

We present two single channel optical PAM-4 transmitters, one based on a novel 3-section PN-capacitive micro-ring modulator with on-chip low-power driver and a near-zero power capacitive wavelength locking system and another one based on a 2-section thermally tuned PN micro-ring modulator of the similar size with the same modulator driver. The maximum error-free data-rate of 16 Gb/s and 22 Gb/s at the energy efficiency of 200 fJ/b and 430 fJ/b for the former and the latter transmitters are measured, respectively, and the design trade-offs are discussed. The chips are fabricated in the GlobalFoundries 90 nm CMOS SOI process.

Roadmapping the next generation of silicon photonics

Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions-mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to increase the proliferation of silicon photonics from millions to billions of units shipped? What will the next generation of silicon photonics look like? What are the common threads in the integration and fabrication bottlenecks that silicon photonic applications face, and which emerging technologies can solve them? This perspective article is an attempt to answer such questions. We chart the generational trends in silicon photonics technology, drawing parallels from the generational definitions of CMOS technology. We identify the crucial challenges that must be solved to make giant strides in CMOS-foundry-compatible devices, circuits, integration, and packaging. We identify challenges critical to the next generation of systems and applications-in communication, signal processing, and sensing. By identifying and summarizing such challenges and opportunities, we aim to stimulate further research on devices, circuits, and systems for the silicon photonics ecosystem.

All-optic control using a photo-thermal heater in Si photonics

We propose and demonstrate a simple all-optic control for Si photonics using a photo-thermal heater. The control light is absorbed in a heavily doped control waveguide and the signal light phase is tuned through thermal diffusion in a signal waveguide adjacent to but not optically coupled with the control waveguide. We designed and fabricated Mach-Zehnder- and microring-type devices requiring 17 (π-phase shift) and 4 (switching between resonance and non-resonance with 6 dB extinction) mW of control power, respectively. We confirmed that the heating efficiency of all-optic control exceeded that of an electrical heater placed above the signal waveguide.

Thermo-optic phase shifters based on silicon-on-insulator platform: state-of-the-art and a review

Silicon photonic platforms offer relevance to large markets in many applications, such as optical phased arrays, photonic neural networks, programmable photonic integrated circuits, and quantum computation devices. As one of the basic tuning devices, the thermo-optic phase shifter (TOPS) plays an important role in all these applications. A TOPS with the merits of easy fabrication, low power consumption, small thermal time constant, low insertion loss, small footprint, and low crosstalk, is needed to improve the performance and lower the cost of the above applications. To meet these demands, various TOPS have been proposed and experimentally demonstrated on different foundry platforms In this paper, we review the state-of-the-art of TOPS, including metal heater, doped silicon, silicide, with silicon substrate undercut for heat insulation, folded waveguide structure, and multi-pass waveguide structure. We further compare these TOPSs and propose the directions of the future developments on TOPS.

Integrated silicon carbide electro-optic modulator

Owing to its attractive optical and electronic properties, silicon carbide is an emerging platform for integrated photonics. However an integral component of the platform is missing—an electro-optic modulator, a device which encodes electrical signals onto light. As a non-centrosymmetric crystal, silicon carbide exhibits the Pockels effect, yet a modulator has not been realized since the discovery of this effect more than three decades ago. Here we design, fabricate, and demonstrate a Pockels modulator in silicon carbide. Specifically, we realize a waveguide-integrated, small form-factor, gigahertz-bandwidth modulator that operates using complementary metal-oxide-semiconductor (CMOS)-level voltages on a thin film of silicon carbide on insulator. Our device is fabricated using a CMOS foundry compatible fabrication process and features no signal degradation, no presence of photorefractive effects, and stable operation at high optical intensities (913 kW/mm²), allowing for high optical signal-to-noise ratios for modern communications. Our work unites Pockels electro-optics with a CMOS foundry compatible platform in silicon carbide.

Electro-optic modulator is used to encode electrical signals onto light. Here the authors demonstrate an electro-optic modulator, based on Silicon Carbide, which can be useful for quantum and optical communications.

Recent advances in integrated optical directed logic operations for high performance optical computing: a review

Optical directed logic (DL) is a novel logic operation scheme that employs electrical signals as operands to control the working states of optical switches to perform the logic functions. This review first provides an overview of the concept and working principle of DL. The developing trends of DL computing are then discussed in detail, including the fundamental optical DL gates, combinational optical DL operations, reconfigurable logic computing, low power optical logic computing, and programmable photonic network. The concluding remarks provide an outlook on the DL future development and its impacts in optical computing.

Advances in integrated ultra-wideband electro-optic modulators [Invited]

Increasing data traffic and bandwidth-hungry applications require electro-optic modulators with ultra-wide modulation bandwidth for cost-efficient optical networks. Thus far, integrated solutions have emerged to provide high bandwidth and low energy consumption in compact sizes. Here, we review the design guidelines and delicate structures for higher bandwidth, applying them to lumped-element and traveling-wave electrodes. Additionally, we focus on candidate material platforms with the potential for ultra-wideband optical systems. By comparing the superiority and mechanism limitations of different integrated modulators, we design a future roadmap based on the recent advances.

High-speed silicon microresonator modulators with high optical modulation amplitude (OMA) at input powers >10 mW

A high-speed silicon photonic microdisc modulator is used with more than 10 mW optical power in the bus waveguide, extending the optical power handling regime used with compact silicon resonant modulators at 1550 nm. We present an experimental study of the wavelength tuning range and biasing path required to shift the resonant frequency to the optimal point versus on chip power. We measure the optical modulation amplitude (OMA) along different biasing trajectories of the microdisc under active modulation and demonstrate an OMA of 4.1 mW with 13.5 mW optical power in the bus waveguide at 20 Gbit/s non-return to zero (NRZ) data modulation.

Overlaying 5G radio access networks on wavelength division multiplexed optical access networks with carrier distribution

As 5G communication matures, the requirement for advanced radio access networks (RAN) drives the evolution of optical access networks to support these needs. Basic RAN functions, mobile front-haul to the backbone and interconnected front-end remote radio units, must support and enable data rate surges, low-latency applications, RF coordination, etc. Wavelength division multiplexed optical access networks (WDM-OANs) provide sufficient network capacity to support the addition of RAN services, especially in unused portions of WDM. We propose and demonstrate a method for RAN overlay in WDM-OANs that employ distributed carriers. In such systems, the carrier is modulated at the central office for direct-detected downstream digital data services; later the same carrier is remodulated for the uplink. We propose the use of silicon photonics to intercept the downstream and add 5G signals. We examine the distributed-carrier power budget issues in this overlay scenario. The carrier power must be harvested for direct detection of both digital and RoF services, and yet hold in reserve sufficient power for the uplink remodulation of all services. We concentrate on the silicon photonics subsystem at the remote node to add RoF signals. We demonstrate the overlay with a fabricated chip and study strategic allocations of carrier power at the optical network units housing the radio units to support the overlay. After the successful drop and reception of both conventional WDM-OAN and the newly overlaid RoF signals, we demonstrate sufficient carrier power margin for the upstream remodulation.

Low-chirp push-pull dual-ring modulator with 144 Gb/s PAM-4 data transmission

We experimentally demonstrate a low-chirp high-speed push-pull dual-ring modulator. The device is formed by two parallel cascaded add-drop ring modulators which has a Fabry-Perot resonance spectrally similar as electromagnetically induced transparency (EIT) effect. Differential drive signals are applied to the two rings to shift the individual resonances towards opposite directions, creating intensity modulation with suppressed frequency chirp. We present static and dynamic characterization of the device, including chirp parameter. We also demonstrate 144 Gb/s PAM-4 data transmission with 1-km standard single-mode fiber (SSMF) with BER below hard-decision forward error correction (HD-FEC) threshold with 7% overhead.

High-speed performance of a TDFA-band micro-ring resonator modulator and detector

We demonstrate a silicon-on-insulator micro-ring resonator (MRR) modulator and defect-mediated (DM) detector operating at a wavelength near 2 µm for use in the thulium doped fiber amplifier wavelength band. The MRR modulator was critically coupled with an unbiased notch-depth of 20 dB and Q-factor of 4700. The resonance shift under reverse bias was 23 pm/V with a calculated V_πL_π of 2.2 to 2.6 V·cm from -1 to -8 V, respectively. Simulations are in good agreement with the measured data. The experimental modulation bandwidth was 12.5 GHz, limited by the response of the commercial external detector used for this measurement. The DM detector was operated in avalanche mode, had 1.97 µm wavelength responsivities of 0.04 and 0.14 A/W, and had bandwidths greater than 16 and 7.5 GHz at -15 and -30 V biases, respectively. Large-signal measurement demonstrated open eye-diagrams at 5, 10, and 12.5 Gbps for the DM detector and also for an optical link consisting of the modulator and detector integrated on the same silicon chip.

Compact wavelength- and bandwidth-tunable microring modulator

Fabrication errors currently hold back the large-scale adoption of silicon micro-ring modulators (MRMs). The ability to correct their spectral features post-fabrication is required to enable their commercialization. Here, we report and demonstrate an MRM that uses a tunable two-point coupling scheme, which maintains the MRM's compact footprint (60 µm×45 µm) and allows one to tune the MRM's operating wavelength and adjust the optical bandwidth (and/or extinction ratio). This means that one can compensate for fabrication errors and thereby improve the yields. We confirm the modulator's operation by showing NRZ and PAM-4 modulation, up to 28 Gb/s and 19.9 Gb/s, respectively. Also, the proposed tunable MRM maintains the microring's free-spectral range (FSR), which proves its compatibility for configurable and high-bandwidth DWDM applications.

Integrated silicon nitride electro-optic modulators with atomic layer deposited overlays

Silicon nitride (SiN) is currently the most prominent CMOS-compatible platform for photonics at wavelengths <1  μm. However, realizing fast electro-optic (EO) modulators, the key components of any integrated optics platform, remains challenging in SiN. Modulators based on the plasma dispersion effect, as in silicon, are not available. Despite the fact that significant second-harmonic generation has been reported for silicon-rich SiN, no efficient Pockels effect-based modulators have been demonstrated. Here we report the back-end CMOS-compatible atomic layer deposition (ALD) of conventional second-order nonlinear crystals, zinc oxide, and zinc sulfide, on existing SiN waveguide circuits. Using these ALD overlays, we demonstrate EO modulation in ring resonators.

Optimal design of a microring cavity optical modulator for efficient RF-to-optical conversion

The efficiency of optical sideband generation with a microring resonator modulator as a function of modulator parameters is studied taking into account the photon dynamics inside the resonator. The best achievable modulation efficiency is determined for any choice of the resonator intrinsic quality factor, and analytic solutions for the optimum modulator parameters, namely the coupling coefficient and the detuning between the frequencies of the input laser light and the microring resonance, are provided. This analysis is carried out both for a narrowband RF signal, in which case the modulator is optimized for the center frequency of this signal, and for wideband signals, when high conversion efficiency over a wide range of RF frequencies is desired. The obtained results are expected to be useful coherent optical links, direct detection RF receivers, and optical wavelength converters.

Optical and electrical trade-offs of rib-to-contact distance in depletion-type ring modulators

We present a study on electrical and optical trade-offs of the doping map in a ring modulator. Here, we investigate the effects of the high-doped region distance to edge of the waveguide sidewall. Four groups of ring modulators with different rib-to-contact distances are fabricated and measured where the key parameters such as extinction ratio, insertion loss, transmission penalty, and bandwidth are compared quantitatively. Small-signal responses for the selected ring modulators are simulated where results are in agreement with measurement results. We show that, at 4dB extinction ratio, decreasing the high-doped region distance to rib from 800nm to 350nm will increase the bandwidth by 3.8 ×. However, we observed 8.4dB increase the insertion loss. We also show that the high-doped region location affects the trade-off between bandwidth and frequency response magnitude at low frequencies. At 350nm, this trade off is 2.5 × and 3.8× more efficient compared to 550nm and 800nm, respectively.

High-speed low-chirp PAM-4 transmission based on push-pull silicon photonic microring modulators

We report a silicon photonic modulator based on the use of dual parallel microring modulators (MRMs) inserted in a Mach-Zehnder interferometer (MZI). It is operated in a push-pull configuration for low-chirp transmission at approximately 1550 nm. The chirp parameters of the device are measured using 10 Gb/s on-off keying (OOK) transmission over 20 km of standard single mode fiber (SSMF), and they are less than 0.01, showing the low-chirp characteristic of the modulator. We further demonstrate four-level pulse amplitude modulation (PAM-4) transmission at 92 Gb/s over 1 km of SSMF and at 40 Gb/s over 20 km of SSMF. The measured bit error rates (BERs) are below the hard-decision (HD) forward error correction (FEC) threshold of 3.8 × 10^-3.

Ring modulator small-signal response analysis based on pole-zero representation

We present a closed-form expression for the small-signal response of a depletion-mode ring modulator and verify it by measurement results. Both electrical and optical behavior of micro-ring modulator as well as the loss variation due to the index modulation is considered in the derivation. This expression suggests that a ring modulator is a third-order system with one real pole, one zero and a pair of complex-conjugate poles. The exact positions of the poles/zero are given and shown to be dependent upon parameters such as electrical bandwidth, coupling condition, optical loss, and sign/value of laser detunings. We show that the location of zero is different for positive and negative detuning, and therefore, the ring modulator frequency response is asymmetric. We use the gain-bandwidth product as a figure of merit and calculate it for various pole/zero locations. We show that gain-bandwidth for the over-coupled ring modulator is superior compared to other coupling conditions. Also, we show that the gain-bandwidth product can be increased to a limit by increasing the electrical bandwidth.

On-chip microwave signal generation based on a silicon microring modulator

A photonic-assisted microwave signal generator based on a silicon microring modulator is demonstrated. The microring cavity incorporates an embedded PN junction that enables a microwave signal to modulate the lightwave circling inside. The DC component of the modulated light is trapped in the cavity, while the high-order sideband components are able to exit the cavity and then generate microwave signals at new frequencies in a photodetector. In our proof-of-concept experiment, a 10 GHz microwave signal is converted to a 20 GHz signal in the optical domain with an electrical harmonic suppression ratio of 22 dB. An analytic model is also established to explain the operation mechanism, which agrees well with the measured data.

Silicon dual-ring modulator driven by differential signal

A silicon dual-ring modulator consisting of two serially cascaded rings with embedded PN junctions is driven by a differential signal pair. We show by simulation and experiment that the device has advantages over the single-ring modulator in terms of optical bandwidth, 3-dB modulation bandwidth and bit rate, at the expense of a 1.7-dB increase in the transmission penalty and a twofold increase of the RF power consumption. Driven by differential pseudo random binary sequence (PRBS) signals of 0.5-V peak-to-peak voltage (Vpp), the dual-ring modulator exhibits optical bandwidths of 66 pm and 40 pm at 12.5  Gb/s and 20  Gb/s, respectively. In contrast, the single-ring modulator has an optical bandwidth of 26 pm under a single-end PRBS signal of 0.5  Vpp at 12.5  Gb/s, and its eye diagram closes if the bit rate rises to 20  Gb/s.

Optical peaking enhancement in high-speed ring modulators

Ring resonator modulators (RRM) combine extreme compactness, low power consumption and wavelength division multiplexing functionality, making them a frontrunner for addressing the scalability requirements of short distance optical links. To extend data rates beyond the classically assumed bandwidth capability, we derive and experimentally verify closed form equations of the electro-optic response and asymmetric side band generation resulting from inherent transient time dynamics and leverage these to significantly improve device performance. An equivalent circuit description with a commonly used peaking amplifier model allows straightforward assessment of the effect on existing communication system architectures. A small signal analytical expression of peaking in the electro-optic response of RRMs is derived and used to extend the electro-optic bandwidth of the device above 40 GHz as well as to open eye diagrams penalized by intersymbol interference at 32, 40 and 44 Gbps. Predicted peaking and asymmetric side band generation are in excellent agreement with experiments.