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Alshahrani D, Kesaria M, Jiménez JJ, Kwan D, Srivastava V, Delmas M, Morales FM, Liang B, Huffaker D. Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices. ACS APPLIED MATERIALS & INTERFACES 2023; 15:8624-8635. [PMID: 36724387 PMCID: PMC9940107 DOI: 10.1021/acsami.2c19292] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 01/23/2023] [Indexed: 06/18/2023]
Abstract
Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach's optical and structural quality, so the mechanisms by which this improvement is achieved remain unclear. One critical issue in increasing the performance of InAs/GaSb T2SLs arises from the lattice mismatch between InAs and GaSb, leading to interfacial strain in the structure. Not only that but also, since each side of the InAs/GaSb heterosystem does not have common atoms, there is a possibility of atomic intermixing at the IFs. To address such issues, an intentional InSb interfacial layer is commonly introduced at the InAs-on-GaSb and GaSb-on-InAs IFs to compensate for the strain and the chemical mismatches. In this report, we investigate InAs/GaSb T2SLs with (Sample A) and without (Sample B) InSb IF layers emitting in the mid-wavelength infrared (MWIR) through photoluminescence (PL) and band structure simulations. The PL studies indicate that the maximum PL intensity of Sample A is 1.6 times stronger than that of Sample B. This could be attributed to the effect of migration-enhanced epitaxy (MEE) growth mode. Band structure simulations understand the impact of atomic intermixing and segregation at T2SL IFs on the bandgap energy and PL intensity. It is observed that atomic intermixing at the IFs changes the bandgap energy and significantly affects the wave function overlap and the optical property of the samples. Transmission electron microscopy (TEM) measurements reveal that the T2SL IFs in Sample A are very rough compared to sharp IFs in Sample B, indicating a high possibility of atomic intermixing and segregation. Based on these results, it is believed that high-quality heterostructure could be achieved by controlling the IFs to enhance its structural and compositional homogeneities and the optical properties of the T2SLs.
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Affiliation(s)
- Dhafer Alshahrani
- School
of Physics and Astronomy, Cardiff University, The Parade, CardiffCF24 3AA, U.K.
| | - Manoj Kesaria
- School
of Physics and Astronomy, Cardiff University, The Parade, CardiffCF24 3AA, U.K.
| | - Juan J. Jiménez
- Department
of Materials Science and Metallurgical Engineering and Inorganic Chemistry,
Faculty of Sciences, University of Cádiz, Puerto Real11510, Cádiz, Spain
- IMEYMAT:
Institute of Research on Electron Microscopy and Materials, University of Cádiz, Puerto Real11510, Cádiz, Spain
| | - Dominic Kwan
- School
of Physics and Astronomy, Cardiff University, The Parade, CardiffCF24 3AA, U.K.
| | - Vibha Srivastava
- School
of Physics and Astronomy, Cardiff University, The Parade, CardiffCF24 3AA, U.K.
| | - Marie Delmas
- School
of Physics and Astronomy, Cardiff University, The Parade, CardiffCF24 3AA, U.K.
| | - Francisco M. Morales
- Department
of Materials Science and Metallurgical Engineering and Inorganic Chemistry,
Faculty of Sciences, University of Cádiz, Puerto Real11510, Cádiz, Spain
- IMEYMAT:
Institute of Research on Electron Microscopy and Materials, University of Cádiz, Puerto Real11510, Cádiz, Spain
| | - Baolai Liang
- California
NanoSystems Institute, University of California, Los Angeles, California90095, United States
| | - Diana Huffaker
- School
of Physics and Astronomy, Cardiff University, The Parade, CardiffCF24 3AA, U.K.
- California
NanoSystems Institute, University of California, Los Angeles, California90095, United States
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Park J, Kang JH, Liu X, Maddox SJ, Tang K, McIntyre PC, Bank SR, Brongersma ML. Dynamic thermal emission control with InAs-based plasmonic metasurfaces. SCIENCE ADVANCES 2018; 4:eaat3163. [PMID: 30539139 PMCID: PMC6286178 DOI: 10.1126/sciadv.aat3163] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2018] [Accepted: 11/07/2018] [Indexed: 05/25/2023]
Abstract
Thermal emission from objects tends to be spectrally broadband, unpolarized, and temporally invariant. These common notions are now challenged with the emergence of new nanophotonic structures and concepts that afford on-demand, active manipulation of the thermal emission process. This opens a myriad of new applications in chemistry, health care, thermal management, imaging, sensing, and spectroscopy. Here, we theoretically propose and experimentally demonstrate a new approach to actively tailor thermal emission with a reflective, plasmonic metasurface in which the active material and reflector element are epitaxially grown, high-carrier-mobility InAs layers. Electrical gating induces changes in the charge carrier density of the active InAs layer that are translated into large changes in the optical absorption and thermal emission from metasurface. We demonstrate polarization-dependent and electrically controlled emissivity changes of 3.6%P (6.5% in relative scale) in the mid-infrared spectral range.
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Affiliation(s)
- Junghyun Park
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA
| | - Ju-Hyung Kang
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA
| | - Xiaoge Liu
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA
| | - Scott J. Maddox
- Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758, USA
| | - Kechao Tang
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA
| | - Paul C. McIntyre
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA
| | - Seth R. Bank
- Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758, USA
| | - Mark L. Brongersma
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA
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