Proposal for fabrication-tolerant SOI polarization splitter-rotator based on cascaded MMI couplers and an assisted bi-level taper

Integrating inverse design and partially etched platform: an ultra-compact polarization splitter and rotator as an example

Silicon photonics devices benefit greatly from a partially etched platform and inverse design. Herein, we propose a bi-layer polarization splitter and rotator with a topology pattern and demonstrate it on a silicon-on-insulator platform. Our device exhibits a significantly reduced physical footprint of only 2µm×6µm, compared to traditional directional couplers and tapered waveguides. The device accomplishes the functions of polarization conversion and separation in such a compact design without redundant tapered or bending waveguides. The tested minimum insertion loss with the fabrication batch reaches 0.57 and 0.67 dB for TE and TM modes, respectively. The TE mode demonstrates a wider bandwidth and lower ILs than the TM modes, averaging around 1 dB from 1530 to 1565 nm. The M modes exhibit approximately 2 dB ILs at the same wavelength range, decreasing to about 1 dB between 1565 and 1580 nm. Improved designs and fabrication conditions strongly suggest the potential for further performance enhancement in the device. This successful initiative validates the exceptional performance resulting from the integration of the partially etched platform and inverse design, providing valuable insights for future photonic integrated device designs.

Multi-channel broadband nonvolatile programmable modal switch

Mode-division multiplexing (MDM) in chip-scale photonics is paramount to sustain data capacity growth and reduce power consumption. However, its scalability hinges on developing efficient and dynamic modal switches. Existing active modal switches suffer from substantial static power consumption, large footprints, and narrow bandwidth. Here, we present, for the first time, to the best of our knowledge, a novel multiport, broadband, non-volatile, and programmable modal switch designed for on-chip MDM systems. Our design leverages the unique properties of integrating nanoscale phase-change materials (PCM) within a silicon photonic architecture. This enables independent manipulation of spatial modes, allowing for dynamic, non-volatile, and selective routing to six distinct output ports. Crucially, our switch outperforms current dynamic modal switches by offering non-volatile, energy-efficient multiport functionality and excels in performance metrics. Our switch exhibits exceptional broadband operating bandwidth exceeding 70 nm, with low loss (< 1 dB), and a high extinction ratio (> 10 dB). Our framework provides a step forward in chip-scale MDM, paving the way for future green and scalable data centers and high-performance computers.

Fully adiabatic polarization rotator-splitter based on thin-film lithium niobate platform

A Polarization Rotator-Splitter (PRS) based on thin-film lithium niobate (TFLN) is demonstrated in this work. The PRS consists of a partially etched polarization rotating taper and an adiabatic coupler, which enables the input TE₀ and TM₀ to be output as TE₀ from two ports, respectively. The fabricated PRS using standard i-line photolithography achieved large polarization extinction ratios (PERs) of > 20 dB across the whole C-band. Excellent polarization characteristics are maintained when the width is changed by ±150 nm. The on-chip insertion losses of TE₀ and TM₀ are less than 1.5 dB and 1 dB, respectively.

Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform

A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride-on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide structure. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits. The chip is expected to have high power handling capability as the light is input from the SiN waveguide. The use of silicon dioxide as the upper cladding of the device ensures its compatibility with the metal back-end-of-line process. By optimizing the structure parameters, a polarization conversion loss lower than 1 dB and cross talk larger than 27.6 dB can be obtained for TM-TE mode conversion over a wavelength range of 1450 to 1600 nm. For TE mode, the insertion loss is lower than 0.26 dB and cross talk is larger than 25.3 dB over the same wavelength range. The proposed device has good potential in diversifying the functionalities of the multilayer photonic chip with high integration density.

Compact thin film lithium niobate folded intensity modulator using a waveguide crossing

A small footprint, low voltage and wide bandwidth electro-optic modulator is critical for applications ranging from optical communications to analog photonic links, and the integration of thin-film lithium niobate with photonic integrated circuit (PIC) compatible materials remains paramount. Here, a hybrid silicon nitride and lithium niobate folded electro-optic Mach Zehnder modulator (MZM) which incorporates a waveguide crossing and 3 dB multimode interference (MMI) couplers for splitting and combining light is reported. This modulator has an effective interaction region length of 10 mm and shows a DC half wave voltage of roughly 4.0 V, or a modulation efficiency (Vπ ·L) of roughly 4 V·cm. Furthermore, the device demonstrates a power extinction ratio of roughly 23 dB and shows .08 dB/GHz optical sideband power roll-off with index matching fluid up to 110 GHz, with a 3-dB bandwidth of 37.5 GHz.

Plasmon-induced transparency sensor for detection of minuscule refractive index changes in ultra-low index materials

Detection of low-index materials such as aerogels and also detection of refractive index variations in these materials is still a challenging task. Here, a high figure of merit (FOM) sensor based on plasmon-induced transparency (PIT) is proposed for the detection of aerogel refractive index changes. In the proposed PIT sensor, the transparency window in an opaque region arises from the coupling between surface plasmon polariton (SPP) mode and planar waveguide mode. By comprising sub-wavelength grating (SWG) in the planar waveguide region, the maximum of the electric field of waveguide occurs in a low index media. This facilitates detection of the aerogels when they are used as the low index material (sensing material). Application of the subwavelength grating waveguide also improves the sensitivity of the sensor by a factor of six compared to a conventional structure with a homogenous waveguide. The proposed structure has a quality factor of Q ≥ 1800, and a reflection of 86%, and can detect the refractive index changes as low as Δn = 0.002 (around n = 1.0). The lineshape, Q-factor, and resonant wavelength of the transparency spectrum can be controlled by tailoring the structural parameters. Our work also has potential application in switching, filtering, and spectral shaping.

Broadband and CMOS compatible polarization splitter-rotator based on a bi-level taper

A silicon-on-insulator polarization diversity scheme is proposed. Based on an asymmetrical evanescent coupler, a broadband and compact polarization splitter-rotator comprising mode conversion tapers and mode sorting asymmetric Y junctions is optimized with silicon dioxide upper cladding and a silicon nitride waveguide. The simulation results show mode conversion loss is less than 0.2 dB, and the extinction ratio is lower than -17dB in the wavelength range of 1.48µm to 1.67µm.

Polarization Splitter-Rotator Based on Multimode Waveguide Grating

We demonstrate a polarization splitter rotator (PSR) based on multimode waveguide grating (MWG) on a silicon-on-insulator (SOI) platform. Bloch mode hybridization in mini-stopband is exploited to achieve high polarization conversion efficiency. The fabricated device yields a high extinction ratio of > 53 dB and > 31 dB, low crosstalk of < −26.4 dB and < −40 dB for the injected TE0 and TM0 mode, with average insertion loss of 1.2 dB and 1.5 dB in the wavelength regime 1552 nm–1562 nm. Such a device shows great design flexibility and an easy fabrication process, serving as a good candidate in integrated polarization diversity circuits, especially for applications requiring spectra manipulation. Additionally, the polarization conversion approach provides opportunities to develop novel polarization management devices.

C + L band polarization rotator-splitter based on a compact S-bend waveguide mode demultiplexer

A novel high-fabrication-tolerance mode demultiplexer (MD) based on an S-bend waveguide is designed, which is used to split TE₁ mode and TE₀ mode, and convert the TE₁ mode to TE₀ mode. Based on the MD, a polarization-rotator-splitter (PRS) is demonstrated. The transmission losses of the fabricated PRS are lower than 0.5 dB and 0.6 dB for TE₀ mode and TM₀ mode, respectively, in the wavelength span of 1520-1630 nm. And the corresponding polarization extinction ratios are larger than 19.5 dB and 17.6 dB, respectively. This MD has the most compact size comparing with other experimentally demonstrated MDs used in PRS.

Effect of Process Parameters on Mode Conversion in Submicron Tapered Silicon Ridge Waveguides

The modal property and light propagation in tapered silicon ridge waveguides with different ridge heights are investigated for a silicon on insulator (SOI) platform with a 500 nm silicon (Si) thickness. Mode conversion between the transverse magnetic (TM) fundamental and higher-order transverse electric (TE) modes occurs when light is propagated in a waveguide taper. Such a conversion is due to mode hybridization resulting from the vertical asymmetry of the cross-section in the ridge waveguides. The influence of angled sidewalls and asymmetric cladding on mode conversion is also studied. It is shown that a very long taper length (adiabatic) is required for a complete conversion to take place. Conversely, such mode conversion could be suppressed by designing a short non-adiabatic taper. Our results show that significant improvement in performance metrics can be achieved by considering process parameters’ effect on mode conversion. With an optimum selection of the etching depth and accounting asymmetries due to angled sidewalls and cladding, we demonstrate an 84.7% reduction in taper length (adiabatic) for mode conversion and a 97% efficiency TM preserving taper (ultra-short). The analysis is essential for applications such as compact polarizers, polarization splitters/rotators, and tapers for TM devices.

Edge Couplers in Silicon Photonic Integrated Circuits: A Review

Silicon photonics has drawn increasing attention in the past few decades and is a promising key technology for future daily applications due to its various merits including ultra-low cost, high integration density owing to the high refractive index of silicon, and compatibility with current semiconductor fabrication process. Optical interconnects is an important issue in silicon photonic integrated circuits for transmitting light, and fiber-to-chip optical interconnects is vital in application scenarios such as data centers and optical transmission systems. There are mainly two categories of fiber-to-chip optical coupling: off-plane coupling and in-plane coupling. Grating couplers work under the former category, while edge couplers function as in-plane coupling. In this paper, we mainly focus on edge couplers in silicon photonic integrated circuits. We deliver an introduction to the research background, operation mechanisms, and design principles of silicon photonic edge couplers. The state-of-the-art of edge couplers is reviewed according to the different structural configurations of the device, while identifying the performance, fabrication feasibility, and applications. In addition, a brief comparison between edge couplers and grating couplers is conducted. Packaging issues are also discussed, and several prospective techniques for further improvements of edge couplers are proposed.

Subwavelength polarization splitter-rotator with ultra-compact footprint

An ultra-compact polarization splitter-rotator with a discretized subwavelength nanostructure is demonstrated on the silicon-on-insulator platform. The device has a length of only 7.92 μm. For TE₀-TE₀, a low insertion loss (<0.2  dB), low crosstalk (<-20  dB), and high extinction ratio (>40  dB) are achieved over a broad wavelength range from 1500 nm to 1600 nm. For TM₀-TE₀, the insertion loss is lower than 1 dB over 40 nm bandwidth (1530-1570 nm). The crosstalk is lower than -25  dB, and the extinction ratio is larger than 20 dB, from 1500 nm to 1600 nm.

Compact silicon 10-mode multi/demultiplexer for hybrid mode- and polarisation-division multiplexing system

To further increase the capacity of the optical transmission system, the hybrid mode- and polarisation-division multiplexing (MDM-PDM) technology has been proved to be an efficient approach by multiplexing dual polarisations for each orthogonal eigen mode. A hybrid (de)multiplexer [(De)MUX] is one of the most important fabrics for the hybrid MDM-PDM networks. A compact silicon 10-mode hybrid (De)MUX is proposed based on three cascaded asymmetric directional couplers (ADCs) based sections, three adiabatic tapers, and a polarisation beam splitter (PBS). The phase-matching conditions can be achieved by varying the widths of the bus waveguides for the TM modes and then by varying the widths of the access waveguides for the TE modes. The simulated results show that a compact total coupling length for TM₁ ~ TM₃ and TE₁ ~ TE₅ modes can be achieved to be 55.4 μm. In addition, the total loss of the proposed hybrid (De)MUX can be reduced benefitting from the fewer tapers compared with the conventional cascaded ADCs. The PBS is also optimised with a compact length of 7.0 μm and high extinction ratios of 32.9 dB and 15.4 dB for the TM₀ and TE₀ modes, respectively.

Ultracompact, high extinction ratio polarization beam splitter-rotator based on hybrid plasmonic-dielectric directional coupling

A polarization beam splitter-rotator based on asymmetric directional coupling is proposed. An ultrashort cross-polarization coupling length of 7.7 μm is achieved by manipulating the optical field distribution via the plasmonic effect, which is the shortest one reported so far, to the best of our knowledge. At the wavelength of 1.55 μm, the extinction ratios are as high as 50.9 dB and 28.2 dB for fundamental transverse magnetic (TM₀) and transverse electric (TE₀) polarizations, respectively, and the corresponding insertion losses are 1.545 dB and 0.037 dB. In addition, the TM₀-to-TE₀ polarization conversion efficiency is higher than 95% within a bandwidth of 70 nm.

Experimental realization of an O-band compact polarization splitter and rotator

We experimentally realize a compact wideband polarization splitter and rotator (PSR) with CMOS compatibility. The fabricated PSR is then tested by utilizing a fabrication-tolerant TE-pass on-chip polarizer we propose to practically solve the issue of accurately aligning the polarizations in fiber and modes on chip. Both of these polarization handling devices take the advantage of bend structure that confines TE mode better than TM mode. The fabricated PSR has a high TM-TE and TE-TE mode conversion efficiency of -0.4 dB and -0.2 dB at 1310 nm, while the extinction ratio is better than 18 dB and the broad bandwidth exceeds 100 nm.

Compact highly-efficient polarization splitter and rotator based on 90° bends

We propose a compact highly-efficient CMOS-compatible polarization splitter and rotator (PSR) with a wide bandwidth covering the whole O-band. It benefits from the different confinement capability of TE and TM modes in bend structure. This bend structure helps shorten the PSR and maintain high efficiency, achieving the bending, polarization splitting, rotating of light beam at the same time. Numerical simulations utilizing Lumerical 3-D FDTD solutions demonstrate that the present PSR has a high TM-TE conversion efficiency of -0.11 dB and high TE-TE conversion efficiency of -0.09 dB at 1310 nm, while the extinction ratio is 27.36 dB and 30.61 dB respectively.

Ultracompact and high efficient silicon-based polarization splitter-rotator using a partially-etched subwavelength grating coupler

On-chip polarization manipulation is pivotal for silicon-on-insulator material platform to realize polarization-transparent circuits and polarization-division-multiplexing transmissions, where polarization splitters and rotators are fundamental components. In this work, we propose an ultracompact and high efficient silicon-based polarization splitter-rotator (PSR) using a partially-etched subwavelength grating (SWG) coupler. The proposed PSR consists of a taper-integrated SWG coupler combined with a partially-etched waveguide between the input and output strip waveguides to make the input transverse-electric (TE) mode couple and convert to the output transverse-magnetic (TM) mode at the cross port while the input TM mode confine well in the strip waveguide during propagation and directly output from the bar port with nearly neglected coupling. Moreover, to better separate input polarizations, an additional tapered waveguide extended from the partially-etched waveguide is also added. From results, an ultracompact PSR of only 8.2 μm in length is achieved, which is so far the reported shortest one. The polarization conversion loss and efficiency are 0.12 dB and 98.52%, respectively, together with the crosstalk and reflection loss of -31.41/-22.43 dB and -34.74/-33.13 dB for input TE/TM mode at wavelength of 1.55 μm. These attributes make the present device suitable for constructing on-chip compact photonic integrated circuits with polarization-independence.

Realization of a compact polarization splitter-rotator on silicon

A novel compact polarization splitter-rotator (PSR) is proposed and realized with silicon-on-insulator nanowires. The present PSR consists of an adiabatic taper, an asymmetric directional coupler (ADC), and a multimode interference (MMI) mode filter. The adiabatic taper enables an efficient mode conversion from the launched TM₀ mode to the TE₁ mode in a wide waveguide, which is then coupled to the TE₀ mode of a narrow waveguide through the ADC. Meanwhile, the launched TE₀ mode does not have mode conversion and outputs from the through port directly. The MMI mode filter is cascaded at the through port to filter out the residual power of the TE₁ mode so that the extinction ratio of the PSR is improved greatly. The total length of the PSR is ∼70  μm and the fabricated PSR has an extinction ratio of ∼20  dB over a broadband ranging from 1547 to 1597 nm.

Highly efficient silicon optical polarization rotators based on mode order conversions

We design and demonstrate the novel silicon optical polarization rotators (PRs) based on the TM(0)-TE(n)-TE(0) mode conversions inside the waveguide. The TM(0)-TE(n) mode converters are realized by the mode hybridization of the tapered rib waveguides. The TE(n)-TE(0) mode converters based on the beam shaping method are followed to complete the PRs function. By using the TE(1), TE(2), and TE(3) mode as the transitional mode, the fabricated PRs show the insert losses of less than 0.4, 0.5, and 1 dB, respectively. The corresponding polarization extinction ratios of larger than 21, 18, and 23 dB, over a wavelength range of 100 nm.

Design of a compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides

A compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides is proposed and characterized. For the input TM mode, it is first transferred into the cross strip waveguide using a tapered directional coupler (DC), and then efficiently rotated to the corresponding TE mode using an L-shaped bending polarization rotator (PR). Finally, the TE mode for slot waveguide at the output end is obtained with the help of a strip-to-slot mode converter. By contrast, for the input TE mode, it almost passes through the slot waveguide directly and outputs at the bar end with nearly neglected coupling due to a large mode mismatch. Moreover, an additional S-bend connecting the tapered DC and bending PR is used to enhance the performance. Results show that a total device length of 19.6 μm is achieved, where the crosstalk (CT) and polarization conversion loss are, respectively -26.09 and 0.54 dB, for the TM mode, and the CT and insertion loss are, respectively, -22.21 and 0.41 dB, for the TE mode, both at 1.55 μm. The optical bandwidth is approximately 50 nm with a CT<-20  dB. In addition, fabrication tolerances and field evolution are also presented.

A silicon-on-insulator polarization diversity scheme in the mid-infrared

We propose a silicon-on-insulator (SOI) polarization diversity scheme in the mid-infrared wavelength range. In consideration of absorption loss in silicon dioxide (SiO₂), the polarization splitter-rotator (PSR) is designed and optimized with silicon nitride (SiN) upper-cladding and SiO₂ lower-cladding. This asymmetry allows the PSR, which consists of mode-conversion tapers and subsequent mode-sorting asymmetric Y-junctions, to be fabricated with a simple one-step etching process. Simulation shows that our PSR has good performance with low mode conversion loss (< 0.25 dB) and low crosstalk (< -18 dB) in a very large wavelength range from 4.0 μm to 4.4 μm. The PSR also exhibits large fabrication tolerance with respect to the size deviations in waveguide width, height and refractive index of the upper-cladding. Additionally, PSR devices based on Y-junctions with SiO₂ upper-cladding, and SiN upper- and lower-claddings are designed for potential applications at shorter and longer wavelengths, respectively. These PSR devices could facilitate the development of silicon photonic devices in the mid-infrared.