Nanoplasmonics enhanced terahertz sources

Frequency-domain terahertz spectroscopy using long-carrier-lifetime photoconductive antennas

We present a telecommunication-compatible frequency-domain terahertz spectroscopy system realized by novel photoconductive antennas without using short-carrier-lifetime photoconductors. Built on a high-mobility InGaAs photoactive layer, these photoconductive antennas are designed with plasmonics-enhanced contact electrodes to achieve highly confined optical generation near the metal/semiconductor surface, which offers ultrafast photocarrier transport and, hence, efficient continuous-wave terahertz operation including both generation and detection. Consequently, using two plasmonic photoconductive antennas as a terahertz source and a terahertz detector, we successfully demonstrate frequency-domain spectroscopy with a dynamic range more than 95 dB and an operation bandwidth of 2.5 THz. Moreover, this novel approach to terahertz antenna design opens up a wide range of new possibilities for many different semiconductors and optical excitation wavelengths to be utilized, therefore bypassing short-carrier-lifetime photoconductors with limited availability.

Highly efficient terahertz photoconductive metasurface detectors operating at microwatt-level gate powers

Despite their wide use in terahertz (THz) research and technology, the application spectra of photoconductive antenna (PCA) THz detectors are severely limited due to the relatively high optical gating power requirement. This originates from poor conversion efficiency of optical gate beam photons to photocurrent in materials with sub-picosecond carrier lifetimes. Here we show that using an ultra-thin (160 nm), perfectly absorbing low-temperature grown GaAs metasurface as the photoconductive channel drastically improves the efficiency of THz PCA detectors. This is achieved through perfect absorption of the gate beam in a significantly reduced photoconductive volume, enabled by the metasurface. This Letter demonstrates that sensitive THz PCA detection is possible using optical gate powers as low as 5 µW-three orders of magnitude lower than gating powers used for conventional PCA detectors. We show that significantly higher optical gate powers are not necessary for optimal operation, as they do not improve the sensitivity to the THz field. This class of efficient PCA THz detectors opens doors for THz applications with low gate power requirements.

All-dielectric nanograting for increasing terahertz radiation power of photoconductive antennas

Photoconductive antenna (PCA) is a widely used terahertz (THz) radiation source, but its low radiated power limits the signal-to-noise ratio and bandwidth in THz imaging and spectroscopy applications. Here, we achieved significant PCA power enhancement through etching nanograting directly on the surface of the PCA substrate. The integrated nanograting not only maximizes the generation of photocarriers, but also benefits the bias electric field loaded on the photocarriers. Comparing with the conventional PCA, our PCA realizes a frequency independent THz power enhancement of 3.92 times in the range of 0.05-1.6 THz. Our results reported here not only provide a new method for increasing the THz power of PCAs, but also reveal another way that artificial nanostructures affect the PCAs, which paves the way for the subsequent researches of next-generation PCAs.

Enhanced terahertz emission bandwidth from photoconductive antenna by manipulating carrier dynamics of semiconducting substrate with embedded plasmonic metasurface

In this article, we demonstrate a technique to enhance the Terahertz (THz) emission bandwidth from photo-conductive antenna (PCA) based on semiconducting substrates by manipulating the surface carrier dynamics of the semiconductor. Bandwidths in PCAs are limited by the decay of the photogenerated charge carriers, which in case of SI-GaAs is in the orders of 50 picoseconds. We show, with an embedded design of plasmonic meta-surface in the photoconductive gap of a PCA, it is possible to enhance the emission bandwidths by more than 50 percent. This is due to the fact that these nano-structures act as local recombination sites for the photogenerated carriers, effectively reducing the carriers' lifetime. Additionally, the defect sites reduce the terminal current, thereby reducing the Joule heating in the device. Furthermore, the meta-surface also facilitates higher in-coupling of the exciting infrared light on to the PCA, thereby increasing the optical-to-THz conversion efficiency of the device.

Terahertz Detection with Perfectly-Absorbing Photoconductive Metasurface

Terahertz (THz) photoconductive devices are used for generation, detection, and modulation of THz waves, and they rely on the ability to switch electrical conductivity on a subpicosecond time scale using optical pulses. However, fast and efficient conductivity switching with high contrast has been a challenge, because the majority of photoexcited charge carriers in the switch do not contribute to the photocurrent due to fast recombination. Here, we improve efficiency of electrical conductivity switching using a network of electrically connected nanoscale GaAs resonators, which form a perfectly absorbing photoconductive metasurface. We achieve perfect absorption without incorporating metallic elements, by breaking the symmetry of cubic Mie resonators. As a result, the metasurface can be switched between conductive and resistive states with extremely high contrast using an unprecedentedly low level of optical excitation. We integrate this metasurface with a THz antenna to produce an efficient photoconductive THz detector. The perfectly absorbing photoconductive metasurface opens paths for developing a wide range of efficient optoelectronic devices, where required optical and electronic properties are achieved through nanostructuring the resonator network.

Nanostructure-Enhanced Photoconductive Terahertz Emission and Detection

Photoconductive antennas are commonly used for terahertz wave generation and detection. However, their relatively low radiation power and detection sensitivity often place limitations on the signal-to-noise ratio and operation bandwidth of terahertz imaging and spectroscopy systems. Several different techniques are attempted to address these limitations. The most promising ones take advantage of the unique tools provided by nanotechnology. In this review, the recent nanotechnology-enabled advances in photoconductive antennas, which use nanostructures, such as optical nanoantennas, plasmonic structures, and optical nanocavities, to increase the interaction of the optical pump beam with the photoconductive semiconductor, are discussed. All of these techniques are experimentally demonstrated to be efficient tools for enhancing the performance of photoconductive antennas for terahertz wave generation and detection.

Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation

Photocurrent generation in low-temperature-grown GaAs (LT-GaAs) has been significantly improved by growing a thin AlAs isolation layer between the LT-GaAs layer and semi-insulating (SI)-GaAs substrate. The AlAs layer allows greater arsenic incorporation into the LT-GaAs layer, prevents current diffusion into the GaAs substrate, and provides optical back-reflection that enhances below bandgap terahertz generation. Our plasmon-enhanced LT-GaAs/AlAs photoconductive antennas provide 4.5 THz bandwidth and 75 dB signal-to-noise ratio (SNR) under 50 mW of 1570 nm excitation, whereas the structure without the AlAs layer gives 3 THz bandwidth, 65 dB SNR for the same conditions.

Significant performance improvement of a terahertz photoconductive antenna using a hybrid structure

Design of a photoconductive terahertz antenna based on a distributed Bragg reflector, recessed nanoplasmonic grating and recessed electrodes.

Plasmon-Enhanced below Bandgap Photoconductive Terahertz Generation and Detection

We use plasmon enhancement to achieve terahertz (THz) photoconductive switches that combine the benefits of low-temperature grown GaAs with mature 1.5 μm femtosecond lasers operating below the bandgap. These below bandgap plasmon-enhanced photoconductive receivers and sources significantly outperform commercial devices based on InGaAs, both in terms of bandwidth and power, even though they operate well below saturation. This paves the way for high-performance low-cost portable systems to enable emerging THz applications in spectroscopy, security, medical imaging, and communication.

Bias field tailored plasmonic nano-electrode for high-power terahertz photonic devices

Photoconductive antennas with nano-structured electrodes and which show significantly improved performances have been proposed to satisfy the demand for compact and efficient terahertz (THz) sources. Plasmonic field enhancement was previously considered the dominant mechanism accounting for the improvements in the underlying physics. However, we discovered that the role of plasmonic field enhancement is limited and near-field distribution of bias field should be considered as well. In this paper, we clearly show that the locally enhanced bias field due to the size effect is much more important than the plasmonic enhanced absorption in the nano-structured electrodes for the THz emitters. Consequently, an improved nano-electrode design is presented by tailoring bias field distribution and plasmonic enhancement. Our findings will pave the way for new perspectives in the design and analysis of plasmonic nano-structures for more efficient THz photonic devices.