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Fu J, Chen Y, Lin J, Ye R, Lei L, Shen Y, Deng D, Xu S. Dual-emitting temperature dependent material based on Bi 3+/Eu 3+ co-activated Ba 2Y 2Si 4O 13 phosphor with multicolor anti-counterfeiting. SPECTROCHIMICA ACTA. PART A, MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 2023; 297:122754. [PMID: 37087812 DOI: 10.1016/j.saa.2023.122754] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2023] [Revised: 04/01/2023] [Accepted: 04/13/2023] [Indexed: 05/03/2023]
Abstract
Bi3+, Eu3+ co-doped Ba2Y2Si4O13 phosphors with multi-color luminescence properties were prepared by high temperature solid state method. The structure, luminescent properties and temperature characteristics were studied by X-ray diffraction, scanning electron microscope, fluorescence spectrum and temperature-dependence of emission spectrum. Ba2Y2Si4O13: Bi3+, Eu3+ phosphors can emit color from cyan to red when the excitation wavelength was changed from 340 nm to 390 nm, which is attributed to that there are two Bi3+ ion emission centers, and their emission intensity will change with the change of excitation wavelength. Moreover, the emission of the phosphor has good temperature sensing characteristics, based on the fluorescence intensity ratio of the two blue emission bands of Bi3+ and the red emission peak of Eu3+, a multimode thermometer with high temperature sensitivity was constructed. At the same time, based on the dynamic luminescence characteristics of the phosphor, the dynamic anti-counterfeiting experiments are designed. Therefore, the results show that the material has a bright prospect in the field of temperature sensing and anti-counterfeiting.
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Affiliation(s)
- Jie Fu
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Yanling Chen
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Jianhua Lin
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Renguang Ye
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Lei Lei
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Yang Shen
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Degang Deng
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People's Republic of China.
| | - Shiqing Xu
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People's Republic of China
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Hooda P, Lather V, Malik R, Khatri S, Khangwal J, Kumari P, Taxak V, Kumar M, Khatkar S, Kumar R. Judd-Ofelt analysis of warm reddish orange light emanating samarium (III) complexes possessing two band gaps. J Mol Struct 2022. [DOI: 10.1016/j.molstruc.2022.133423] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
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Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials. CRYSTALS 2020. [DOI: 10.3390/cryst10030208] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells. Luminescence characteristics of different Bi3+-doped materials were found to be strongly different and ascribed to electronic transitions from the excited levels of a Bi3+ ion to its ground state, charge-transfer transitions, Bi3+ dimers or clusters, radiative decay of Bi3+-related localized or trapped excitons, etc. In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.
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Xue J, Wang X, Jeong JH, Yan X. Spectral and energy transfer in Bi3+–Ren+ (n = 2, 3, 4) co-doped phosphors: extended optical applications. Phys Chem Chem Phys 2018; 20:11516-11541. [DOI: 10.1039/c8cp00433a] [Citation(s) in RCA: 60] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Bismuth with [Xe]4f145d106s26p3 electronic configuration is considered as ‘a wonder metal’ due to its diverse oxidation states and multi-type electronic structures.
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Affiliation(s)
- Junpeng Xue
- College of Electronic and Optical Engineering & College of Microelectronics
- Nanjing University of Posts and Telecommunications
- Nanjing
- People's Republic of China
- Department of Physics
| | - Xiangfu Wang
- College of Electronic and Optical Engineering & College of Microelectronics
- Nanjing University of Posts and Telecommunications
- Nanjing
- People's Republic of China
- Key Laboratory of Radio Frequency and Micro–Nano Electronics of Jiangsu Province
| | - Jung Hyun Jeong
- Department of Physics
- Pukyong National University
- Busan 608-737
- Republic of Korea
| | - Xiaohong Yan
- College of Electronic and Optical Engineering & College of Microelectronics
- Nanjing University of Posts and Telecommunications
- Nanjing
- People's Republic of China
- Key Laboratory of Radio Frequency and Micro–Nano Electronics of Jiangsu Province
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