The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers

Epitaxial Growth of Large-Area Monolayers and van der Waals Heterostructures of Transition-Metal Chalcogenides via Assisted Nucleation

The transition-metal chalcogenides include some of the most important and ubiquitous families of 2D materials. They host an exceptional variety of electronic and collective states, which can in principle be readily tuned by combining different compounds in van der Waals heterostructures. Achieving this, however, presents a significant materials challenge. The highest quality heterostructures are usually fabricated by stacking layers exfoliated from bulk crystals, which - while producing excellent prototype devices - is time consuming, cannot be easily scaled, and can lead to significant complications for materials stability and contamination. Growth via the ultra-high vacuum deposition technique of molecular-beam epitaxy (MBE) should be a premier route for 2D heterostructure fabrication, but efforts to achieve this are complicated by non-uniform layer coverage, unfavorable growth morphologies, and the presence of significant rotational disorder of the grown epilayer. This work demonstrates a dramatic enhancement in the quality of MBE grown 2D materials by exploiting simultaneous deposition of a sacrificial species from an electron-beam evaporator during the growth. This approach dramatically enhances the nucleation of the desired epi-layer, in turn enabling the synthesis of large-area, uniform monolayers with enhanced quasiparticle lifetimes, and facilitating the growth of epitaxial van der Waals heterostructures.

Exploring the effects of molecular beam epitaxy growth characteristics on the temperature performance of state-of-the-art terahertz quantum cascade lasers

This study conducts a comparative analysis, using non-equilibrium Green's functions (NEGF), of two state-of-the-art two-well (TW) Terahertz Quantum Cascade Lasers (THz QCLs) supporting clean 3-level systems. The devices have nearly identical parameters and the NEGF calculations with an abrupt-interface roughness height of 0.12 nm predict a maximum operating temperature (Tmax) of ~ 250 K for both devices. However, experimentally, one device reaches a Tmax of ~ 250 K and the other a Tmax of only ~ 134 K. Both devices were fabricated and measured under identical conditions in the same laboratory, with high quality processes as verified by reference devices. The main difference between the two devices is that they were grown in different MBE reactors. Our NEGF-based analysis considered all parameters related to MBE growth, including the maximum estimated variation in aluminum content, growth rate, doping density, background doping, and abrupt-interface roughness height. From our NEGF calculations it is evident that the sole parameter to which a drastic drop in Tmax could be attributed is the abrupt-interface roughness height. We can also learn from the simulations that both devices exhibit high-quality interfaces, with one having an abrupt-interface roughness height of approximately an atomic layer and the other approximately a monolayer. However, these small differences in interface sharpness are the cause of the large performance discrepancy. This underscores the sensitivity of device performance to interface roughness and emphasizes its strategic role in achieving higher operating temperatures for THz QCLs. We suggest Atom Probe Tomography (APT) as a path to analyze and measure the (graded)-interfaces roughness (IFR) parameters for THz QCLs, and subsequently as a design tool for higher performance THz QCLs, as was done for mid-IR QCLs. Our study not only addresses challenges faced by other groups in reproducing the record Tmax of ~ 250 K and ~ 261 K but also proposes a systematic pathway for further improving the temperature performance of THz QCLs beyond the state-of-the-art.

Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers

In this work, we investigate the effects of n and p-type background doping, interface composition diffusion (interdiffusion) of the barrier material and layer thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of terahertz-frequency quantum cascade lasers (THz QCLs). We analysed four exemplary structures: a bound-to-continuum design, hybrid design, LO-phonon design and a two-well high-temperature performance LO-phonon design. The exemplary bound-to-continuum design has shown to be the most sensitive to the background doping as it stops lasing for concentrations around 1.0 · 10 15 - 2.0 · 10 15 cm- 3 . The LO-phonon design is the most sensitive to growth fluctuations during MBE and this is critical for novel LO-phonon structures optimised for high-temperature performance. We predict that interdiffusion mostly affects current density for designs with narrow barrier layers and higher Al composition. We show that layer thickness variation leads to significant changes in material gain and current density, and in some cases to the growth of nonfunctional devices. These effects serve as a beacon of fundamental calibration steps required for successful realisation of THz QCLs.

Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation

ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density-voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm-3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.

Field-resolved high-order sub-cycle nonlinearities in a terahertz semiconductor laser

The exploitation of ultrafast electron dynamics in quantum cascade lasers (QCLs) holds enormous potential for intense, compact mode-locked terahertz (THz) sources, squeezed THz light, frequency mixers, and comb-based metrology systems. Yet the important sub-cycle dynamics have been notoriously difficult to access in operational THz QCLs. Here, we employ high-field THz pulses to perform the first ultrafast two-dimensional spectroscopy of a free-running THz QCL. Strong incoherent and coherent nonlinearities up to eight-wave mixing are detected below and above the laser threshold. These data not only reveal extremely short gain recovery times of 2 ps at the laser threshold, they also reflect the nonlinear polarization dynamics of the QCL laser transition for the first time, where we quantify the corresponding dephasing times between 0.9 and 1.5 ps with increasing bias currents. A density-matrix approach reproducing the emergence of all nonlinearities and their ultrafast evolution, simultaneously, allows us to map the coherently induced trajectory of the Bloch vector. The observed high-order multi-wave mixing nonlinearities benefit from resonant enhancement in the absence of absorption losses and bear potential for a number of future applications, ranging from efficient intracavity frequency conversion, mode proliferation to passive mode locking.

Short Barriers for Lowering Current-Density in Terahertz Quantum Cascade Lasers

Scattering due to interface-roughness (IR) and longitudinal-optical (LO) phonons are primary transport mechanisms in terahertz quantum-cascade lasers (QCLs). By choosing GaAs/Al0.10Ga0.90As heterostructures with short-barriers, the effect of IR scattering is mitigated, leading to low operating current-densities. A series of resonant-phonon terahertz QCLs developed over time, achieving some of the lowest threshold and peak current-densities among published terahertz QCLs with maximum operating temperatures above 100 K. The best result is obtained for a three-well 3.1 THz QCL with threshold and peak current-densities of 134 A/cm2 and 208 A/cm2 respectively at 53 K, and a maximum lasing temperature of 135 K. Another three-well QCL designed for broadband bidirectional operation achieved lasing in a combined frequency range of 3.1–3.7 THz operating under both positive and negative polarities, with an operating current-density range of 167–322 A/cm2 at 53 K and maximum lasing temperature of 141 K or 121 K depending on the polarity of the applied bias. By showing results from QCLs developed over a period of time, here we show conclusively that short-barrier terahertz QCLs are effective in achieving low current-density operation at the cost of a reduction in peak temperature performance.

Sideband generation of coupled-cavity terahertz semiconductor lasers under active radio frequency modulation

The radio frequency (RF) modulation is a powerful tool, which is used for generating sidebands in semiconductor lasers for active mode-locking. The two-section coupled-cavity laser geometry shows advantages over traditional Fabry-Pérot cavities in the RF modulation efficiency, because of its reduced device capacitance of short section cavity. Further, it has been widely used for active/passive mode-locking of semiconductor diode lasers. For semiconductor-based quantum cascade lasers (QCLs) emitting in the far-infrared or terahertz frequency bands, the two-section coupled-cavity configuration can strongly prevent the laser from multimode emissions. This is because of its strong mode selection (loss modulation), which the cavity geometry introduces. Here, we experimentally demonstrate that the coupled-cavity terahertz QCL can be actively modulated to generate sidebands. The RF modulation is efficient at the frequency that equals the difference frequency between the fundamental and higher order transverse modes of the laser, and its harmonics. We show for the first time that, when the laser is modulated at the second harmonic of the difference frequency, the sideband generation in coupled-cavity terahertz QCLs and the generated sidebands are equally spaced by the injected microwave frequency. Our results, which are presented here, provide a novel approach for modulating terahertz coupled-cavity lasers for active mode-locking. The coupled-cavity geometry shows advantages in generating dense modes with short cavities for potential high-resolution spectroscopy. Furthermore, the short coupled-cavity laser consumes less electrical power than Fabry-Pérot lasers that generate a similar mode spacing.

Homogeneous spectral broadening of pulsed terahertz quantum cascade lasers by radio frequency modulation

The authors present an experimental investigation of radio frequency modulation on pulsed terahertz quantum cascade lasers (QCLs) emitting around 4.3 THz. The QCL chip used in this work is based on a resonant phonon design which is able to generate a 1.2 W peak power at 10 K from a 400-µm-wide and 4-mm-long laser with a single plasmon waveguide. To enhance the radio frequency modulation efficiency and significantly broaden the terahertz spectra, the QCLs are also processed into a double-metal waveguide geometry with a Silicon lens out-coupler to improve the far-field beam quality. The measured beam patterns of the double-metal QCL show a record low divergence of 2.6° in vertical direction and 2.4° in horizontal direction. Finally we perform the inter-mode beat note and terahertz spectra measurements for both single plasmon and double-metal QCLs working in pulsed mode. Since the double-metal waveguide is more suitable for microwave signal transmission, the radio frequency modulation shows stronger effects on the spectral broadening for the double-metal QCL. Although we are not able to achieve comb operation in this work for the pulsed lasers due to the large phase noise, the homogeneous spectral broadening resulted from the radio frequency modulation can be potentially used for spectroscopic applications.