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Daudin B, Siladie AM, Gruart M, den Hertog M, Bougerol C, Haas B, Rouvière JL, Robin E, Recio-Carretero MJ, Garro N, Cros A. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes. NANOTECHNOLOGY 2021; 32:085606. [PMID: 33147580 DOI: 10.1088/1361-6528/abc780] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The spontaneous growth of GaN nanowires (NWs) in absence of catalyst is controlled by the Ga flux impinging both directly on the top and on the side walls and diffusing to the top. The presence of diffusion barriers on the top surface and at the frontier between the top and the sidewalls, however, causes an inhomogeneous distribution of Ga adatoms at the NW top surface resulting in a GaN accumulation in its periphery. The increased nucleation rate in the periphery promotes the spontaneous formation of superlattices in InGaN and AlGaN NWs. In the case of AlN NWs, the presence of Mg can enhance the otherwise short Al diffusion length along the sidewalls inducing the formation of AlN nanotubes.
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Affiliation(s)
- Bruno Daudin
- Univ. Grenoble Alpes, CEA, IRIG-PHELIQS, NPSC, 17 rue des martyrs, F-38000 Grenoble, France
| | | | - Marion Gruart
- Univ. Grenoble Alpes, CEA, IRIG-PHELIQS, NPSC, 17 rue des martyrs, F-38000 Grenoble, France
| | - Martien den Hertog
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 rue des martyrs, F-38000 Grenoble, France
| | - Catherine Bougerol
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 rue des martyrs, F-38000 Grenoble, France
| | - Benedikt Haas
- Univ. Grenoble Alpes, CEA, IRIG-MEM, LEMMA, 17 rue des martyrs, F-38000 Grenoble, France
| | - Jean-Luc Rouvière
- Univ. Grenoble Alpes, CEA, IRIG-MEM, LEMMA, 17 rue des martyrs, F-38000 Grenoble, France
| | - Eric Robin
- Univ. Grenoble Alpes, CEA, IRIG-MEM, LEMMA, 17 rue des martyrs, F-38000 Grenoble, France
| | | | - Núria Garro
- Institute of Materials Science (ICMUV), Universidad de Valencia, PO Box E-22085, Valencia, Spain
| | - Ana Cros
- Institute of Materials Science (ICMUV), Universidad de Valencia, PO Box E-22085, Valencia, Spain
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2
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Sobanska M, Zytkiewicz ZR, Klosek K, Kruszka R, Golaszewska K, Ekielski M, Gieraltowska S. Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer. NANOTECHNOLOGY 2020; 31:184001. [PMID: 31940593 DOI: 10.1088/1361-6528/ab6bf2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Examples are presented that application of amorphous Al x O y nucleation layer is an efficient way of controlling spatial distribution of GaN nanowires grown by plasma-assisted molecular beam epitaxy. On GaN/sapphire substrates Al x O y stripes induce formation of GaN nanowires while a compact GaN layer is formed outside the stripes. We show that the ratio of nanowire length h to the thickness of the compact layer d can be tailored by adjusting impinging gallium and nitrogen fluxes. Calculations of the h/d aspect ratio were performed taking into account dependence of nanowire incubation time on the growth parameters. In agreement with calculations we found that the value of h/d ratio can be increased by increasing the N/Ga flux ratio in the way that the N-limited growth regime determines nanowire axial growth rate while growth of compact layer remains Ga-limited. This ensures the highest value of the h/d aspect ratio. Local modification of GaN growth kinetics caused by surface diffusion of Ga adatoms through the boundary separating the Al x O y stripe and the GaN/sapphire substrate is discussed. We show that during the nanowire incubation period gallium is transported out of the Al x O y stripe, which delays nanowire nucleation onset and leads to reduced length of GaN nanowires in the vicinity of the stripe edge. Simultaneously the growth on the GaN/sapphire substrate is locally enhanced, so the planar GaN layers adopts a typical edge shape of mesa structures grown by selective area growth. Ga diffusion length on a-Al x O y surface of ∼500 nm is inferred from our results.
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Affiliation(s)
- Marta Sobanska
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Zbigniew R Zytkiewicz
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Kamil Klosek
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Renata Kruszka
- Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | | | - Marek Ekielski
- Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Sylwia Gieraltowska
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
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Prabaswara A, Kim H, Min JW, Subedi RC, Anjum DH, Davaasuren B, Moore K, Conroy M, Mitra S, Roqan IS, Ng TK, Alshareef HN, Ooi BS. Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates. ACS NANO 2020; 14:2202-2211. [PMID: 31986010 DOI: 10.1021/acsnano.9b09126] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on Ti3C2 MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of Ti3C2 MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force microscopy reveals a Schottky barrier height of ∼330 meV between the GaN nanowire and the Ti3C2 MXene film. Our work highlights the potential of using MXene as a transparent and conductive preorienting nucleation layer for high-quality GaN growth on amorphous substrates.
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Affiliation(s)
- Aditya Prabaswara
- Computer, Electrical, and Mathematical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Hyunho Kim
- Physical Science and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Jung-Wook Min
- Computer, Electrical, and Mathematical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Ram Chandra Subedi
- Computer, Electrical, and Mathematical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Dalaver H Anjum
- Core Laboratories , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
- Department of Physics , Khalifa University , PO Box 127788, Abu Dhabi , United Arab Emirates
| | - Bambar Davaasuren
- Core Laboratories , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Kalani Moore
- Department of Physics, Bernal Institute , University of Limerick , Limerick , V94 T9PX , Ireland
| | - Michele Conroy
- Department of Physics, Bernal Institute , University of Limerick , Limerick , V94 T9PX , Ireland
| | - Somak Mitra
- Physical Science and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Iman S Roqan
- Physical Science and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Tien Khee Ng
- Computer, Electrical, and Mathematical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Husam N Alshareef
- Physical Science and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Boon S Ooi
- Computer, Electrical, and Mathematical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
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Sobanska M, Zytkiewicz ZR, Calabrese G, Geelhaar L, Fernández-Garrido S. Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies. NANOTECHNOLOGY 2019; 30:154002. [PMID: 30641512 DOI: 10.1088/1361-6528/aafe17] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A comprehensive description of the self-assembled formation of GaN nanowires (NWs) by plasma-assisted molecular beam epitaxy (PAMBE) on amorphous-Al x O y buffered Si is presented. The incubation time that precedes the formation of GaN NWs is analyzed as a function of the growth parameters using line-of-sight quadrupole mass spectrometry. We found that the incubation time follows an Arrhenius-type temperature dependence as well as an inverse power law with respect to the Ga flux. Our results reveal a weaker dependence of the incubation time on the Ga flux and faster nucleation on amorphous-Al x O y in comparison to conventional nitridated Si substrates. In addition, an unprecedented analysis of the dependence of the incubation time on the N flux demonstrates a stronger dependence of the incubation time on the N than on the Ga flux. Our results are summarized in growth diagrams to visualize the impact of the growth parameters on the incubation time. The diagrams can also be used to predict the incubation time for so far unexplored growth conditions. Finally, we measured the desorbing Ga flux upon the nucleation stage to determine the growth parameters that result in effective N-rich conditions as required for the self-assembled formation of GaN NWs. These original measurements were combined with the knowledge gained on the incubation time to create a growth map that illustrates the different growth regimes that can be obtained when GaN is grown on an amorphous-Al x O y buffer layer, regardless of the host substrate. Such a map provides a useful guide to induce the growth and control the morphology of GaN NW ensembles on amorphous-Al x O y . Results presented in this work allow to conclude that amorphous-Al x O y is preferred over nitridated Si as it enables shorter incubation times as well as a wider range of growth parameters to induce the self-assembled formation of GaN NWs in PAMBE.
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Affiliation(s)
- M Sobanska
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
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5
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Prabaswara A, Min JW, Zhao C, Janjua B, Zhang D, Albadri AM, Alyamani AY, Ng TK, Ooi BS. Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer. NANOSCALE RESEARCH LETTERS 2018; 13:41. [PMID: 29411164 PMCID: PMC5801136 DOI: 10.1186/s11671-018-2453-1] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2017] [Accepted: 01/23/2018] [Indexed: 05/30/2023]
Abstract
Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.
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Affiliation(s)
- Aditya Prabaswara
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi Arabia
| | - Jung-Wook Min
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi Arabia
| | - Chao Zhao
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi Arabia
| | - Bilal Janjua
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi Arabia
| | - Daliang Zhang
- Imaging and Characterization Core Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi Arabia
| | - Abdulrahman M. Albadri
- National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh, 11442-6086 Saudi Arabia
| | - Ahmed Y. Alyamani
- National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh, 11442-6086 Saudi Arabia
| | - Tien Khee Ng
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi Arabia
| | - Boon S. Ooi
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi Arabia
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Zhao C, Ng TK, ElAfandy RT, Prabaswara A, Consiglio GB, Ajia IA, Roqan IS, Janjua B, Shen C, Eid J, Alyamani AY, El-Desouki MM, Ooi BS. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics. NANO LETTERS 2016; 16:4616-23. [PMID: 27352143 DOI: 10.1021/acs.nanolett.6b01945] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the "green gap" has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley-Read-Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.
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Affiliation(s)
- Chao Zhao
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Tien Khee Ng
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Rami T ElAfandy
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Aditya Prabaswara
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Giuseppe Bernardo Consiglio
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Idris A Ajia
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Iman S Roqan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Bilal Janjua
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Chao Shen
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Jessica Eid
- Solar and Photovoltaic Engineering Research Center, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Ahmed Y Alyamani
- National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST) , Riyadh 11442-6086, Saudi Arabia
| | - Munir M El-Desouki
- National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST) , Riyadh 11442-6086, Saudi Arabia
| | - Boon S Ooi
- Photonics Laboratory, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
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7
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Sadaf SM, Ra YH, Nguyen HPT, Djavid M, Mi Z. Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes. NANO LETTERS 2015; 15:6696-701. [PMID: 26384135 DOI: 10.1021/acs.nanolett.5b02515] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.
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Affiliation(s)
- S M Sadaf
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Y-H Ra
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - H P T Nguyen
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - M Djavid
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Z Mi
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
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