Solution processed organic photodetector utilizing an interdiffused polymer/fullerene bilayer

Photonic synaptic transistors with new electron trapping layer for high performance and ultra-low power consumption

Photonic synaptic transistors are being investigated for their potential applications in neuromorphic computing and artificial vision systems. Recently, a method for establishing a synaptic effect by preventing the recombination of electron-hole pairs by forming an energy barrier with a double-layer consisting of a channel and a light absorption layer has shown effective results. We report a triple-layer device created by coating a novel electron-trapping layer between the light-absorption layer and the gate-insulating layer. Compared to the conventional double-layer photonic synaptic structure, our triple-layer device significantly reduces the recombination rate, resulting in improved performance in terms of the output photocurrent and memory characteristics. Furthermore, our photonic synaptic transistor possesses excellent synaptic properties, such as paired-pulse facilitation (PPF), short-term potentiation (STP), and long-term potentiation (LTP), and demonstrates a good response to a low operating voltage of - 0.1 mV. The low power consumption experiment shows a very low energy consumption of 0.01375 fJ per spike. These findings suggest a way to improve the performance of future neuromorphic devices and artificial vision systems.

Panchromatically Responsive Organic Photodiodes utilizing a Noninvasive Narrowband Color Electrode

Organic photodiodes (OPDs) are emerging as potential candidates in image sensors owing to their high sensitivity and submicron photoactive layer thickness. For OPDs to be more competitive, it is necessary to develop an economical fabrication process and improve their narrowband spectral response from visible to near-infrared (NIR). In this study, panchromatic OPDs with a remarkable narrowband response from visible to NIR are developed by integrating a solution-processed optical filter-electrode (OF-electrode) and a panchromatic organic photoactive layer. Solution-processable TiO₂ nanoparticles (sTNPs) bound to an acetylacetone ligand are used to construct the OF-electrode, which had the structure Ag/sTNP/Ag, and a ternary blend of a polymer donor, a nonfullerene acceptor, and a fullerene acceptor is used for preparing the panchromatic organic photoactive layer. Direct integration of the OF-electrode with the organic photoactive layer eliminates the need for additional OF installation, without damaging the underlying organic photoactive layer. Variation of the sTNP layer thickness controls the color filtering wavelength to vary from visible to NIR, with exceptionally narrow full width at half-maximum (fwhm) values of 48-82 nm and transparency values of 50-70%. Owing to their selective response for the desired color and their capability to minimize noise from other colors, the OPDs exhibit high sensitivity values of 2.82 × 10¹², 3.02 × 10¹², and 3.94 × 10¹² cm Hz^0.5/W (Jones) with narrow fwhm values of 110, 91, and 75 nm at a peak transmittance exceeding 65% for blue, green, and red, respectively. Furthermore, they detect NIR light at a wavelength of 950 nm with a narrow fwhm value of 51 nm and a high sensitivity of 3.78 × 10¹² cm Hz^0.5/W (Jones).

Facile Tuning the Detection Spectrum of Organic Thin Film Photodiode via Selective Exciton Activation

Here, we introduce a method of tuning the high-detectivity spectra of the organic photodiode (OPD) to fabricate a thin-film filter-less full-color image sensor. The strategically introduced PIN junction enables a selective activation of excitons generated from the photons with low extinction coefficient in the active layer such that the separated holes/electrons can contribute to the external current. In addition, we show that a well-defined PIN junction blocks the injection of nonallowed charge carriers, leading to very low dark current and near-ideal diode characteristics. Consequently, the high specific detectivity over 1.0 × 10¹² Jones are observed from R/G/B-selective thin-film OPDs.

Three-Phase Morphology Evolution in Sequentially Solution-Processed Polymer Photodetector: Toward Low Dark Current and High Photodetectivity

Sequentially solution-processed polymer photodetectors (SSP PPDs) based on poly(3-hexylthiophene-2,5-diyl) (P3HT)/[6,6]-phenyl C₇₁-butyric acid methyl ester (PC₇₁BM) are fabricated by depositing the top layers of PC₇₁BM from an appropriate cosolvent of 2-chlorophenol (2-CP)/o-dichlorobenzene (ODCB) onto the predeposited bottom layers of P3HT. By adjusting the ratio of 2-CP/ODCB in the top PC₇₁BM layers, the resulting SSP PPD shows a decreased dark current and an increased photocurrent, leading to a maximum detectivity of 1.23 × 10¹² Jones at a wavelength of 550 nm. This value is 5.3-fold higher than that of the conventional bulk heterojunction PPD. Morphology studies reveal that the PC₇₁BM partially penetrates the predeposited P3HT layer during the spin-coating process, resulting in an optimal three-phase morphology with one well-mixed interdiffusion P3HT/PC₇₁BM phase in the middle of the bulk and two pure phases of P3HT and PC₇₁BM at the two electrode sides. We show that the pure phases form high Schottky barriers (>2.0 eV) at the active layer/electrodes interface and efficiently block unfavorable reverse charge carrier injection by significantly decreasing the dark current. The interdiffussion phase enlarges the donor-acceptor interfacial area leading to a large photocurrent. We also reveal that the improved performance of SSP PPDs is also due to the enhanced optical absorption, improved P3HT crystallinity, increased charge carrier mobilities, and suppressed bimolecular recombination.

Spatial Confinement of the Optical Sensitizer to Realize a Thin Film Organic Photodetector with High Detectivity and Thermal Stability

A thin film planar heterojunction organic photodetector (PHJ-OPD) is demonstrated. Different from a conventional sensitizer-doped photodetector, the limited spatial distribution of sensitizer in a PHJ-OPD enables significantly reduced thickness of the active layer without allowing the formation of unnecessary trap sites and electron percolation pathways. As a result, peak external quantum efficiency (EQE) of 120 700% and detectivity over 10¹³ Jones are demonstrated with thin active layer thickness of 150 nm, which can be a significant benefit for high-resolution image sensor application. Furthermore, the operating voltage can be decreased to -5 V while maintaining high detectivity over 10¹² Jones. Remarkable thermal stability is also observed with minor change in detectivity for 2 h of continuous operation at 60 °C due to morphological robustness of PHJ. This work opens up a possibility of using a thin film PHJ-OPD as a key unit of high-resolution image sensor.

High sensitivity and fast response solution processed polymer photodetectors with polyethylenimine ethoxylated (PEIE) modified ITO electrode

Most organic photodetectors utilize a bulk heterojunction (BHJ) photo-active film due to its high exciton dissociation efficiency. However, the low dark current density, a key role in determining the overall performance of photodetectors, is hardly achieved in the BHJ structure since both the donor and acceptor domains are in contact with the same electrode. The most popular strategy to overcome this problem is by fabricating bilayer or multilayer devices. However, the complicated fabrication process is a challenge for printing electronics. In this work, we demonstrate a solution processed polymer photodetector based on a poly (3-hexylthiophene) (P3HT): (phenyl-C61-butyric-acid-methyl-ester) (PC₆₁BM) blend film with polyethylenimine ethoxylated (PEIE) modified ITO electrode. The transparent PEIE efficiently blocks the unnecessary electronic charge injection between the active film and the electrode, which dramatically decrease the dark current. Under illumination, the photoexcited charges accumulated in the PEIE modified ITO region finally can tunnel through the barrier with the help of the applied reverse bias, leading to a large photocurrent. Therefore, the resulting polymer photodetector shows a 2.48 × 10⁴ signal-to-noise ratio (SNR) under -0.3 V bias and an 11.4 MHz bandwidth across the visible spectra under a small reverse bias of 0.5 V. The maximum EQE of 3250% in the visible wavelength is obtained for the polymer photodetector at -1 V under 370 nm (3.07 μW/cm²) illumination. This solution processed polymer photodetector manufacturing is highly compatible with the flexible, low-cost, and large area organic electronic technologies.

Dark current reduction strategies using edge-on aligned donor polymers for high detectivity and responsivity organic photodetectors

The difluorobenzene-incorporated polymer showed strong ordering in edge-on mode, resulting in a significant reduction in the leakage current, and thus PFBT2OBT:PC₇₀BM devices showed highly improved detectivity of over 10¹³ Jones at −2V.

High sensitivity, fast response and low operating voltage organic photodetectors by incorporating a water/alcohol soluble conjugated polymer anode buffer layer

We demonstrate the high sensitivity, fast response and low operating voltage organic photodetectors by incorporating an anode buffer layer.

Synthesis of Phenanthro[1,10,9,8-cdefg]carbazole-Based Conjugated Polymers for Green-Selective Organic Photodiodes

A push-pull-type donor copolymer, named PP-TPD, was synthesized with the Suzuki coupling reaction using 6H-phenanthro[1,10,9,8-cdefg]carbazole (PCZ) as the donor unit and 1,3-bis(5-bromothiophen-2-yl)-5-octyl-4H-thieno[3,4-c]pyrrole-4,6(5H)-dione (TPD) as the acceptor unit. The synthesized PP-TPD was systematically investigated in terms of crystallinity and thermal, electrical, electrochemical, and optical properties. PP-TPD revealed green-selective absorption with a narrow full width at half-maximum of 138 nm. Green-selective organic photodiodes (OPDs) were constructed using PP-TPD as the green-absorbing donor and ZnO as the nonabsorbing acceptor material. The fabricated OPDs exhibited an extremely low dark current of 0.68 nA/cm² at -5 V and a high detectivity above 10¹² Jones at 550 nm. Moreover, they showed a sufficiently high 3-dB frequency and a linear dynamic range, similar to those of ideal-operating OPDs. The origin and physics background of the observed low dark current and high detectivity are discussed in detail.

Near infrared organic photodetector utilizing a double electron blocking layer

A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO₃) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 x 10⁴ at -1V, which is one order of magnitude higher than PEDOT:PSS single EBL (2.45 x 10³) and three orders of magnitude higher than that of MoO₃ single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 x 10¹¹ Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO₃ single EBL.