Highly linear ring modulator from hybrid silicon and lithium niobate

Highly linear lithium niobate Michelson interferometer modulators assisted by spiral Bragg grating reflectors

Highly linear electro-optic modulators are key components in analog microwave photonic links, offering on-chip direct mixing of optical and RF fields. In this work, we demonstrate a monolithic integrated Michelson interferometer modulator on thin-film lithium niobate (LN), that achieves linearized performance by modulating Bragg grating reflectors placed at the end of Michelson arms. The modulator utilizes spiral-shaped waveguide Bragg gratings on Z-cut LN with top and bottom electrodes to realize extensive reflectors, essential for linearized performance, in a highly integrated form. Optical waveguides are realized using rib etching of LN with precisely engineered bottom and top cladding layers made of silicon dioxide and SU-8 polymer, respectively. The compact design fits a 3 mm long grating in an 80 µm × 80 µm area, achieving a broad operating bandwidth up to 18 GHz. A spurious free dynamic range (SFDR) of 101.2 dB·Hz^2/3 is demonstrated at 1 GHz, compared to 91.5 dB·Hz^2/3 for a reference Mach-Zehnder modulator fabricated on the same chip. Further enhancement in SFDR could be achieved by reducing fiber-to-chip coupling loss. The proposed demonstration could significantly improve the linearity of analog modulator-based integrated optical links.

Silicon nitride stress-optic microresonator modulator for optical control applications

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz^2/3 and 73.8 dB·Hz^2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Linearity-Enhanced Dual-Parallel Mach–Zehnder Modulators Based on a Thin-Film Lithium Niobate Platform

In this work, we report a linearity-enhanced dual-parallel Mach–Zehnder modulator (MZM) on a thin-film lithium niobate platform. By setting the optical and electrical splitting ratios at a specific condition, the third-order intermodulation distortions (IMD3) of the child MZMs cancel with each other, whereas the first-order harmonics (FH) reach the maximum. Passive devices instead of thermo-optical switches are used to control the optical power and phase of the child MZMs, which greatly improve the device stability and simplify the operation complexity. To the best of our knowledge, the experimental results show a record-high spurious-free dynamic range on a thin-film lithium niobate platform (110.7 dB·Hz2/3 at 1 GHz). The E-O response decayed about 1.9 dB from 10 MHz to 40 GHz, and the extrapolated E-O 3 dB bandwidth is expected to be 70 GHz. A half-wave voltage of 2.8 V was also achieved. The proposed modulator provides a promising solution for high-bandwidth and low-voltage analog optical links.

Advances in integrated ultra-wideband electro-optic modulators [Invited]

Increasing data traffic and bandwidth-hungry applications require electro-optic modulators with ultra-wide modulation bandwidth for cost-efficient optical networks. Thus far, integrated solutions have emerged to provide high bandwidth and low energy consumption in compact sizes. Here, we review the design guidelines and delicate structures for higher bandwidth, applying them to lumped-element and traveling-wave electrodes. Additionally, we focus on candidate material platforms with the potential for ultra-wideband optical systems. By comparing the superiority and mechanism limitations of different integrated modulators, we design a future roadmap based on the recent advances.

Design, Simulation, and Analysis of Optical Microring Resonators in Lithium Tantalate on Insulator

In this paper we design, simulate, and analyze single-mode microring resonators in thin films of z-cut lithium tantalate. They operate at wavelengths that are approximately equal to 1.55 μm. The single-mode conditions and transmission losses of lithium tantalate waveguides are simulated for different geometric parameters and silica thicknesses. An analysis is presented on the quality factor and free spectral range of the microring resonators in lithium tantalate at contrasting radii and gap sizes. The electro-optical modulation performance is analyzed for microring resonators with a radius of 20 μm. Since they have important practical applications, the filtering characteristics of the microring resonators that contain two straight waveguides are analyzed. This work enhances the knowledge of lithium tantalate microring structures and offers guidance on the salient parameters for the fabrication of highly efficient multifunctional photonic integrated devices, such as tunable filters and modulators.

Foundry-compatible thin film lithium niobate modulator with RF electrodes buried inside the silicon oxide layer of the SOI wafer

Ever-increasing complexity of communication systems demands the co-integration of electronics and photonics. But there are still some challenges associated with the integration of thin film lithium niobate (TFLN) electro-optic modulators with the standard and well-established silicon photonics. Current TFLN platforms are mostly not compatible with the silicon photonics foundry process due to the choice of substrate or complicated fabrication requirements, including silicon substrate removal and formation of radio-frequency (RF) electrodes on the top of the TFLN. Here, we report on a platform where all the optical and RF waveguiding structures are fabricated first, and then the TFLN is bonded on top of the silicon photonic chip as the only additional step. Hence, the need for substrate removal is eliminated, and except for the last step of TFLN bonding, its fabrication process is silicon foundry compatible and much more straightforward compared to other fabrication methods.

Athermal lithium niobate microresonator

Lithium niobate (LN), possessing wide transparent window, strong electro-optic effect, and large optical nonlinearity, is an ideal material platform for integrated photonics application. Microring resonators are particularly suitable as integrated photonic components, given their flexibility of device engineering and their potential for large-scale integration. However, the susceptibility to temperature fluctuation has become a major challenge for their implementation in a practical environment. Here, we demonstrate an athermal LN microring resonator. By cladding an x-cut LN microring resonator with a thin layer of titanium oxide, we are able to completely eliminate the first-order thermo-optic coefficient (TOC) of cavity resonance right at room temperature (20^°C), leaving only a small residual quadratic temperature dependence with a second-order TOC of only 0.37 pm/K². It corresponds to a temperature-induced resonance wavelength shift within 0.33 nm over a large operating temperature range of (-10 - 50)^°C that is one order of magnitude smaller than a bare LN microring resonator. Moreover, the TiO₂-cladded LN microring resonator is able to preserve high optical quality, with an intrinsic optical Q of 5.8 × 10⁵ that is only about 11% smaller than that of a bare LN resonator. The flexibility of thermo-optic engineering, high optical quality, and device fabrication compatibility show great promise of athermal LN/TiO₂ hybrid devices for practical applications, elevating the potential importance of LN photonic integrated circuits for future communication, sensing, nonlinear and quantum photonics.

High-dimensional communication on etchless lithium niobate platform with photonic bound states in the continuum

Photonic bound states in the continuum (BICs) have been exploited in various systems and found numerous applications. Here, we investigate high-order BICs and apply BICs on an integrated photonic platform to high-dimensional optical communication. A four-channel TM mode (de)multiplexer using different orders of BICs on an etchless lithium niobate (LiNbO₃) platform where waveguides are constructed by a low-refractive-index material on a high-refractive-index substrate is demonstrated. Low propagation loss of the TM modes in different orders and phase-matching conditions for efficient excitation of the high-order TM modes are simultaneously achieved. A chip consisting of four-channel mode (de)multiplexers was fabricated and measured with data transmission at 40 Gbps/channel. All the channels have insertion loss <4.0 dB and crosstalk <-9.5 dB in a 70-nm wavelength band. Therefore, the demonstrated mode (de)multiplexing and high-dimensional communication on LiNbO₃ platform can meet the increasing demand for high capacity in on-chip optical communication.

A heterogeneously integrated silicon photonic/lithium niobate travelling wave electro-optic modulator

Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.

Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.

Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth

We present a thin film crystal ion sliced (CIS) LiNbO₃ phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device's broadband response, which is estimated to extend even beyond 500 GHz. Matching the velocities of these co-propagating RF and optical modes is realized by cladding the modulator's interaction region in a thin UV15 polymer layer, which increases the RF modal index. The fabricated modulator possesses a tightly confined optical mode, which lends itself to a strong interaction between the modulating RF field and the guided optical carrier; resulting in a measured DC half-wave voltage of 3.8 V·cm^-1. The design, fabrication, and characterization of our broadband modulator is presented in this work.

Forward bias operation of silicon photonic Mach Zehnder modulators for RF applications

In this paper, we demonstrate that forward bias (+0.9V) of a high-speed silicon (Si) optical Mach-Zehnder modulator (MZM) increases the radio-frequency (RF) link gain by 30 dB when compared to reverse bias operation (-8V). RF applications require tunable, narrowband electro-optic conversion with high gain to mitigate noise of the optical receiver and realize high RF spur-free dynamic range. Compared to reverse bias, the forward bias gain rolls off more rapidly but offers higher RF link gain improvement of more than 13.2 dB at 20 GHz. Furthermore, forward bias is shown to result in comparable spurious-free dynamic range (SFDR: 104.5 dB.Hz^2/3). We demonstrate through an analytical dc transfer curve the existence of simultaneous high gain and OIP3 and verify the theoretical results with measurement under forward bias at a bias point of around +0.9 V.

Highly linear dual ring resonator modulator for wide bandwidth microwave photonic links

A highly linear dual ring resonator modulator (DRRM) design is demonstrated to provide high spur-free dynamic range (SFDR) in a wide operational bandwidth. Harmonic and intermodulation distortions are theoretically analyzed in a single ring resonator modulator (RRM) with Lorentzian-shape transfer function and a strategy is proposed to enhance modulator linearity for wide bandwidth applications by utilizing DRRM. Third order intermodulation distortion is suppressed in a frequency independent process with proper splitting ratio of optical and RF power and proper dc biasing of the ring resonators. Operational bandwidth limits of the DRRM are compared to the RRM showing the capability of the DRRM in providing higher SFDR in an unlimited operational bandwidth. DRRM bandwidth limitations are a result of the modulation index from each RRM and their resonance characteristics that limit the gain and noise figure of the microwave photonic link. The impact of the modulator on microwave photonic link figure of merits is analyzed and compared to RRM and Mach-Zehnder Interference (MZI) modulators. Considering ± 5 GHz operational bandwidth around the resonance frequency imposed by the modulation index requirement the DRRM is capable of a ~15 dB SFDR improvement (1 Hz instantaneous bandwidth) versus RRM and MZI.

Simple production of membrane-based LiNbO3 micro-modulators with integrated tapers

We report on free-standing electro-optical LiNbO₃ waveguides with integrated tapers made by optical grade dicing. Membranes with a calibrated thickness are produced simultaneously with tapers acting as spot-size converters. Thereby, thicknesses from 450 to 500 μm can simply be achieved together with integrated tapers guaranteeing low insertion losses. These developments open the way to the low-cost production of compact and low-power-consuming electro-optical components. As an example, a 200 μm-long free-standing electro-optical Fabry-Perot is demonstrated with a figure of merit of only 0.19 V·cm in a 4.5 μm-thick membrane.

Method to improve the linearity of the silicon Mach-Zehnder optical modulator by doping control

We optimize the linearity performance of silicon carrier-depletion Mach-Zehnder optical modulator through controlling the doping concentration. The optical field distribution in the waveguide is a Gaussian-like distribution. As the doping concentration increases, the dynamic depletion width of the PN junction under the same modulation signal will decrease, and the integration width of the overlap between the Gaussian-like optical field distribution and the depletion region will become smaller. Therefore the modulated signal has less nonlinear components. Our simulation results proved this analysis. We also fabricated different devices with different doping concentrations. By adopting a ten times doping concentration, the spurious free dynamic range (SFDR) for third-order intermodulation distortion (TID) increases from 109.2 dB.Hz^2/3 to 113.7 dB.Hz^2/3 and the SFDR for second harmonic distortion (SHD) increases from 87.6 dB.Hz^1/2 to 97.5 dB.Hz^1/2 at a driving frequency of 2 GHz. When the driving frequency is 20 GHz, the SFDRs for TID and SHD distortions are 110.3 dB.Hz^2/3 and 96 dB.Hz^1/2, respectively.

Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si

In this paper we demonstrate highly linear Mach-Zehnder interferometer modulators utilizing heterogeneous integration on a Si substrate (HS-MZM). A record high dynamic range was achieved for silicon devices, obtained using hybrid III-V/Si phase modulation sections and single drive push-pull operation, demonstrating a spurious free dynamic range (SFDR) of 112 dB∙Hz^2/3 at 10 GHz, comparable to commercial Lithium Niobate MZMs.

110 GHz CMOS compatible thin film LiNbO3 modulator on silicon

In this paper we address a significant limitation of silicon as an optical material, namely, the upper bound of its potential modulation frequency. This arises due to finite carrier mobility, which fundamentally limits the frequency response of all-silicon modulators to about 60 GHz. To overcome this limitation, another material must be integrated with silicon to provide increased operational bandwidths. Accordingly, this paper proposes and demonstrates the integration of a thin LiNbO₃ device layer with silicon and a novel tuning process that matches the propagation velocities between the propagating radio-frequency (RF) and optical waves. The resulting lithium niobate on silicon (LiNOS) modulator is demonstrated to operate from DC to 110 GHz.

Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

Thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge(23)Sb(7)S(70), to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10(5) quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scale dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.