A silicon-on-insulator polarization diversity scheme in the mid-infrared

High-efficiency and CMOS compatible out-of-plane light emission based on a silicon coupler

Photonic antennas are critical in applications such as spectroscopy, photovoltaics, optical communications, holography, and sensors. Metal antennas are widely used because of their small size, but they are difficult to be compatible with a CMOS. All-dielectric antennas are easier to integrate with Si waveguides, but are generally larger in size. In this paper, we propose the design of a small-sized, high-efficiency semicircular dielectric grating antenna. The antenna's key size is only 2.37µm×4.74µm, and the emission efficiency reaches over 64% in the wavelength range from 1.16 to 1.61 µm. The antenna provides a new, to the best of our knowledge, approach for three-dimensional optical interconnections between different decks of integrated photonic circuits.

Broadband and CMOS compatible polarization splitter-rotator based on a bi-level taper

A silicon-on-insulator polarization diversity scheme is proposed. Based on an asymmetrical evanescent coupler, a broadband and compact polarization splitter-rotator comprising mode conversion tapers and mode sorting asymmetric Y junctions is optimized with silicon dioxide upper cladding and a silicon nitride waveguide. The simulation results show mode conversion loss is less than 0.2 dB, and the extinction ratio is lower than -17dB in the wavelength range of 1.48µm to 1.67µm.

Effect of Process Parameters on Mode Conversion in Submicron Tapered Silicon Ridge Waveguides

The modal property and light propagation in tapered silicon ridge waveguides with different ridge heights are investigated for a silicon on insulator (SOI) platform with a 500 nm silicon (Si) thickness. Mode conversion between the transverse magnetic (TM) fundamental and higher-order transverse electric (TE) modes occurs when light is propagated in a waveguide taper. Such a conversion is due to mode hybridization resulting from the vertical asymmetry of the cross-section in the ridge waveguides. The influence of angled sidewalls and asymmetric cladding on mode conversion is also studied. It is shown that a very long taper length (adiabatic) is required for a complete conversion to take place. Conversely, such mode conversion could be suppressed by designing a short non-adiabatic taper. Our results show that significant improvement in performance metrics can be achieved by considering process parameters’ effect on mode conversion. With an optimum selection of the etching depth and accounting asymmetries due to angled sidewalls and cladding, we demonstrate an 84.7% reduction in taper length (adiabatic) for mode conversion and a 97% efficiency TM preserving taper (ultra-short). The analysis is essential for applications such as compact polarizers, polarization splitters/rotators, and tapers for TM devices.

Theoretical analysis of mode conversion by refractive-index perturbation based on a single tilted slot on a silicon waveguide

We propose a compact mode converter operating at the mid-infrared wavelength of 3.4 µm, comprising an etched parallelogram slot filled with silicon nitride on a silicon-on-calcium fluoride platform. The tilted slot introduces transverse and longitudinal index perturbations on the waveguide eigenmodes, achieving mode conversion in the propagation direction. Differing from previous reports using massive parameter sweep, we provide analytical formulas to determine geometry parameters by considering the modified phase-matching condition and the profiles of coupling coefficient of coupled-mode theory. Rigorous 3D numerical examples demonstrate the transverse electric (TE)₀-to-TE₁, TE₀-to-TE₂, TE₀-to-TE₃, and TE₀-to-TE₄ converters to achieve conversion efficiencies (inter-modal crosstalk [CT] values) of >92.7% (<-27 dB), >91.7% (<-16 dB), >88.2% (<-13 dB), and >75.8% (<-10 dB), respectively, with a total transmitted power of >93%. Converter device lengths range from 16.84 to 24.61 µm for TE₀-to-TE₁ to TE₀-to-TE₄, respectively. Over a broadband wavelength of 100 nm, the conversion efficiency, power transmission, and maximum inter-modal CT are almost >80%, >90%, and <-10 dB, respectively. Also, the fabrication tolerance of the proposed structure is addressed. The proposed model can not only realize arbitrary mode-order conversion but extend to other wavelength bands. To validate the feasibility of our model, the numerical results of our device operating at the wavelength of 1.55 µm are also offered and compared with those of other reports. The proposed idea may pave a new approach to designing mode converters with arbitrary geometries.

High performance ultra-compact SOI waveguide crossing

Waveguide crossing is an important integrated photonic component that will be routinely used for high-density and large-scale photonic integrated circuits, such as optical switches and routers. Several techniques have been reported in achieving high performance waveguide crossings on a silicon-on-insulator photonic platform, i.e., low-loss and low-crosstalk waveguide crossings based on multimode interference, bi-layer tapering, optical transformation, metamaterials, and subwavelength gratings. Until recently, not much attention has been given to the reduction of the footprint of waveguide crossings. Here we experimentally demonstrate an ultra-compact waveguide crossing on silicon photonic platform with a footprint only ~1 × 1 μm². Our simulations show that it has a low insertion loss (< 0.175 dB) and low crosstalk (< -37dB) across the whole C-band, while the fabricated one has an insertion loss < 0.28 dB and crosstalk around -30 dB for the C-band.

Ultracompact and high efficient silicon-based polarization splitter-rotator using a partially-etched subwavelength grating coupler

On-chip polarization manipulation is pivotal for silicon-on-insulator material platform to realize polarization-transparent circuits and polarization-division-multiplexing transmissions, where polarization splitters and rotators are fundamental components. In this work, we propose an ultracompact and high efficient silicon-based polarization splitter-rotator (PSR) using a partially-etched subwavelength grating (SWG) coupler. The proposed PSR consists of a taper-integrated SWG coupler combined with a partially-etched waveguide between the input and output strip waveguides to make the input transverse-electric (TE) mode couple and convert to the output transverse-magnetic (TM) mode at the cross port while the input TM mode confine well in the strip waveguide during propagation and directly output from the bar port with nearly neglected coupling. Moreover, to better separate input polarizations, an additional tapered waveguide extended from the partially-etched waveguide is also added. From results, an ultracompact PSR of only 8.2 μm in length is achieved, which is so far the reported shortest one. The polarization conversion loss and efficiency are 0.12 dB and 98.52%, respectively, together with the crosstalk and reflection loss of -31.41/-22.43 dB and -34.74/-33.13 dB for input TE/TM mode at wavelength of 1.55 μm. These attributes make the present device suitable for constructing on-chip compact photonic integrated circuits with polarization-independence.

Realization of a compact polarization splitter-rotator on silicon

A novel compact polarization splitter-rotator (PSR) is proposed and realized with silicon-on-insulator nanowires. The present PSR consists of an adiabatic taper, an asymmetric directional coupler (ADC), and a multimode interference (MMI) mode filter. The adiabatic taper enables an efficient mode conversion from the launched TM₀ mode to the TE₁ mode in a wide waveguide, which is then coupled to the TE₀ mode of a narrow waveguide through the ADC. Meanwhile, the launched TE₀ mode does not have mode conversion and outputs from the through port directly. The MMI mode filter is cascaded at the through port to filter out the residual power of the TE₁ mode so that the extinction ratio of the PSR is improved greatly. The total length of the PSR is ∼70  μm and the fabricated PSR has an extinction ratio of ∼20  dB over a broadband ranging from 1547 to 1597 nm.

Design of a compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides

A compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides is proposed and characterized. For the input TM mode, it is first transferred into the cross strip waveguide using a tapered directional coupler (DC), and then efficiently rotated to the corresponding TE mode using an L-shaped bending polarization rotator (PR). Finally, the TE mode for slot waveguide at the output end is obtained with the help of a strip-to-slot mode converter. By contrast, for the input TE mode, it almost passes through the slot waveguide directly and outputs at the bar end with nearly neglected coupling due to a large mode mismatch. Moreover, an additional S-bend connecting the tapered DC and bending PR is used to enhance the performance. Results show that a total device length of 19.6 μm is achieved, where the crosstalk (CT) and polarization conversion loss are, respectively -26.09 and 0.54 dB, for the TM mode, and the CT and insertion loss are, respectively, -22.21 and 0.41 dB, for the TE mode, both at 1.55 μm. The optical bandwidth is approximately 50 nm with a CT<-20  dB. In addition, fabrication tolerances and field evolution are also presented.