Mid-infrared wavelength multiplexer in InGaAs/InP waveguides using a Rowland circle grating

Low-Loss Buried InGaAs/InP Integrated Waveguides in the Long-Wave Infrared

In this work, we present a photonic integrated platform based on buried InGaAs waveguides with InP cladding that operates over a large mid-infrared (mid-IR) spectral range. Thanks to wet-etch fabrication patterning and Fe doping, low propagation losses below 1.2 dB/cm (0.3 cm-1 loss coefficient) have been obtained between 4.6 and 11.2 μm wavelengths (890-1960 cm-1 wavenumber), in both transverse electric (TE) and transverse magnetic (TM) polarization modes. The possibility of monolithically integrating such waveguides with mid-IR sources offers promising perspectives for developing broadband, homogeneously integrated systems.

High-efficiency mid-infrared InGaAs/InP arrayed waveguide gratings

Photonic integrated circuits and mid-infrared quantum cascade lasers have attracted significant attention over the years because of the numerous applications enabled by these compact semiconductor chips. In this paper, we demonstrate low loss passive waveguides and highly efficient arrayed waveguide gratings that can be used, for example, to beam combine infrared (IR) laser arrays. The waveguide structure used consists of an In_0.53Ga_0.47As core and InP cladding layers. This material system was chosen because of its compatibility with future monolithic integration with quantum cascade lasers. Different photonic circuits were fabricated using standard semiconductor processes, and experiments conducted with these chips demonstrated low-loss waveguides with an estimated propagation loss of ∼ 1.2 dB/cm as well as micro-ring resonators with an intrinsic Q-factor of 174,000. Arrayed waveguide gratings operating in the 5.15-5.34 µm range feature low insertion loss and non-uniformity of ∼ 0.9 dB and ∼ 0.6 dB, respectively. The demonstration of the present photonic circuits paves the path toward monolithic fabrication of compact infrared light sources with advanced functionalities beneficial to many chemical sensing and high-power applications.

InGaAs Membrane Waveguide: A Promising Platform for Monolithic Integrated Mid-Infrared Optical Gas Sensor

Mid-infrared (mid-IR) absorption spectroscopy based on integrated photonic circuits has shown great promise in trace-gas sensing applications in which the mid-IR radiation directly interacts with the targeted analyte. In this paper, considering monolithic integrated circuits with quantum cascade lasers (QCLs) and quantum cascade detectors (QCDs), the InGaAs-InP platform is chosen to fabricate passive waveguide gas sensing devices. Fully suspended InGaAs waveguide devices with holey photonic crystal waveguides (HPCWs) and subwavelength grating cladding waveguides (SWWs) are designed and fabricated for mid-infrared sensing at λ = 6.15 μm in the low-index contrast InGaAs-InP platform. We experimentally detect 5 ppm ammonia with a 1 mm long suspended HPCW and separately with a 3 mm long suspended SWW, with propagation losses of 39.1 and 4.1 dB/cm, respectively. Furthermore, based on the Beer-Lambert infrared absorption law and the experimental results of discrete components, we estimated the minimum detectable gas concentration of 84 ppb from a QCL/QCD integrated SWW sensor. To the best of our knowledge, this is the first demonstration of suspended InGaAs membrane waveguides in the InGaAs-InP platform at such a long wavelength with gas sensing results. Also, this result emphasizes the advantage of SWWs to reduce the total transmission loss and the size of the fully integrated device's footprint by virtue of its low propagation loss and TM mode compatibility in comparison to HPCWs. This study enables the possibility of monolithic integration of quantum cascade devices with TM polarized characteristics and passive waveguide sensing devices for on-chip mid-IR absorption spectroscopy.

On-chip Fourier-transform spectrometer based on spatial heterodyning tuned by thermo-optic effect

Miniaturized optical spectrometers providing broadband operation and fine resolution have an immense potential for applications in remote sensing, non-invasive medical diagnostics and astronomy. Indeed, optical spectrometers working in the mid-infrared spectral range have garnered a great interest for their singular capability to monitor the main absorption fingerprints of a wide range of chemical and biological substances. Fourier-transform spectrometers (FTS) are a particularly interesting solution for the on-chip integration due to their superior robustness against fabrication imperfections. However, the performance of current on-chip FTS implementations is limited by tradeoffs in bandwidth and resolution. Here, we propose a new FTS approach that gathers the advantages of spatial heterodyning and optical path tuning by thermo-optic effect to overcome this tradeoff. The high resolution is provided by spatial multiplexing among different interferometers with increasing imbalance length, while the broadband operation is enabled by fine tuning of the optical path delay in each interferometer harnessing the thermo-optic effect. Capitalizing on this concept, we experimentally demonstrate a mid-infrared SiGe FTS, with a resolution better than 15 cm⁻¹ and a bandwidth of 603 cm⁻¹ near 7.7 μm wavelength with a 10 MZI array. This is a resolution comparable to state-of-the-art on-chip mid-infrared spectrometers with a 4-fold bandwidth increase with a footprint divided by a factor two.

Ultra-wideband Ge-rich silicon germanium mid-infrared polarization rotator with mode hybridization flattening

In this work we investigate the implementation of ultra-wideband polarization rotator in the mid-infrared spectral region. A new design method of the rotation section is proposed, yielding a polarization rotator with an extinction ratio of at least 15 dB in a wavelength range of 2 µm. For a spectral range wider than 3.8 µm, an extinction ratio of at least 10 dB is achieved for this design. The device is 1660 µm long and the associated insertion loss is below 1.2 dB on the full operational wavelength range. The influence of geometrical parameters with respect to the design method to obtain such a broadband behavior is discussed. Finally, to increase the tolerance to fabrication errors, a tapered rotator design is proposed. Such a device can support up to ± 100 nm fabrication errors and still guarantees remarkable broadband behavior. To the best of our knowledge, this is the first time an integrated polarization rotator is designed to operate for the wavelength range of 4 to 9 µm with a bandwidth exceeding 2 µm.

Integrated broadband dual-polarization Ge-rich SiGe mid-infrared Fourier-transform spectrometer

Miniaturized on-chip spectrometers covering a wide band of the mid-infrared spectrum have an immense potential for multi-target detection in high-impact applications, such as chemical sensing or environmental monitoring. Specifically, multi-aperture spatial heterodyne Fourier-transform spectrometers (SHFTS) provide high throughput and improved tolerance against fabrication errors, compared to conventional counterparts. Still, state-of-the-art implementations have only shown single-polarization operation in narrow bandwidths within the near and short infrared. Here, we demonstrate the first, to the best of our knowledge, dual-polarization ultra-wideband SHFTS working beyond 5 μm wavelength. We exploit the unique flexibility in material engineering of the graded-index germanium-rich silicon-germanium (Ge-rich SiGe) photonic platform to implement a SHFTS that can be operated in an unprecedented range of 800  cm^-1, showing experimental resolution better than 15  cm^-1 for both orthogonal polarizations and free spectral range of 132  cm^-1, in the wavelength range between 5 and 8.5 μm.

Wideband Ge-Rich SiGe Polarization-Insensitive Waveguides for Mid-Infrared Free-Space Communications

The recent development of quantum cascade lasers, with room-temperature emission in the mid-infrared range, opened new opportunities for the implementation of ultra-wideband communication systems. Specifically, the mid-infrared atmospheric transparency windows, comprising wavelengths between 3–5 µm and 8–14 µm, have great potential for free-space communications, as they provide a wide unregulated spectrum with low Mie and Rayleigh scattering and reduced background noise. Despite the great efforts devoted to the development of mid-infrared sources and detectors, little attention is dedicated to the management of polarization for signal processing. In this work, we used Ge-rich SiGe alloys to build a wideband and polarization-insensitive mid-infrared photonic platform. We showed that the gradual index change in the SiGe alloys enabled the design of waveguides with remarkably low birefringence, below 2 × 10−4, over ultra-wide wavelength ranges within both atmospheric transparency windows, near wavelengths of 3.5 µm and 9 µm. We also report on the design of a polarization-independent multimode interference device achieving efficient power splitting in an unprecedented 4.5-µm bandwidth at around 10-µm wavelength. The ultra-wideband polarization-insensitive building blocks presented here pave the way for the development of high-performance on-chip photonic circuits for next-generation mid-infrared free-space communication systems.

Silicon arrayed waveguide gratings at 2.0-μm wavelength characterized with an on-chip resonator

Low-loss arrayed waveguide gratings (AWGs) are demonstrated at a 2.0-μm wavelength. These devices promote rapidly developing photonic applications, supported by the recent development of mid-infrared lasers integrated on silicon (Si). Multi-spectral photonic integrated circuits at 2.0-μm are envisioned since the AWGs are fabricated with the 500-nm-thick Si-on-insulator platform compatible with recently demonstrated lasers and semiconductor optical amplifiers on Si. Characterization with the AWG-ring method improves the on-chip transmission uncertainty to ∼6% compared to the conventional method with an uncertainty of ∼53%. Channel losses of ∼2.4  dB are found, with -31  dB crosstalk per channel. Fully integrated multi-spectral sources at 2.0 μm with pump lasers, low-loss multiplexers, and an output amplifier are now feasible.