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Li H, Wang J, Bai J, Zhang S, Zhang S, Sun Y, Dou Q, Ding M, Wang Y, Qu D, Du J, Tang C, Li E, Prades JD. The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm. NANOMATERIALS 2020; 10:nano10051006. [PMID: 32466114 PMCID: PMC7279557 DOI: 10.3390/nano10051006] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2020] [Revised: 05/20/2020] [Accepted: 05/22/2020] [Indexed: 11/30/2022]
Abstract
The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.
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Affiliation(s)
- Hongqiang Li
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
- Correspondence: (H.L.); (J.D.P.)
| | - Jianing Wang
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Jinjun Bai
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Shanshan Zhang
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Institute of Modern Optics, Nankai University, Tianjin 300071, China
| | - Sai Zhang
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Yaqiang Sun
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Qianzhi Dou
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Mingjun Ding
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Youxi Wang
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Dan Qu
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Jilin Du
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Chunxiao Tang
- Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; (J.W.); (J.B.); (S.Z.); (S.Z.); (Y.S.); (Q.D.); (M.D.); (Y.W.); (D.Q.); (J.D.); (C.T.)
| | - Enbang Li
- Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2522, Australia;
| | - Joan Daniel Prades
- MIND, Departament of Electronics and Biomedical Engineering, Universitat de Barcelona (UB), E-08028 Barcelona, Spain
- Institute of Nanoscience and Nanotechnology (IN UB), Universitat de Barcelona (UB), E-08028 Barcelona, Spain
- Correspondence: (H.L.); (J.D.P.)
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Singh S, Katiyar AK, Sarkar A, Shihabudeen PK, Chaudhuri AR, Goswami DK, Ray SK. Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si 0.5Ge 0.5/Si substrates using molecular beam epitaxy. NANOTECHNOLOGY 2020; 31:115206. [PMID: 31756729 DOI: 10.1088/1361-6528/ab5abe] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report the optical characteristics of relatively large sized (∼7.0-8.0 μm) but low aspect ratio Ge microdisks grown on a virtual Si0.5Ge0.5 substrate using molecular beam epitaxy following the Stranski-Krastanov growth mechanism. Grown microdisks with very low aspect ratio Ge islands exhibit direct band gap (∼0.8 eV) photoluminescence emission sustainable up to room temperature, enabled by the confinement of carriers into the microdisks. p-i-n diodes with an intrinsic layer containing Ge microdisks have been fabricated to study their emission and photoresponse characteristics at an optical communication wavelength of ∼1550 nm. A strong electroluminescence at 1550 nm has been achieved at low temperatures in the device for a very low threshold current density of 2.56 μA cm-2 due to the strong confinement of injected holes. The emission characteristics of the fabricated device with respect to the injected current density and temperature have been studied. Novel emission and optical modulation characteristics at 1550 nm of the fabricated p-i-n device containing Ge microdisks grown on a virtual SiGe substrate indicate its potential for Si CMOS compatible on-chip optical communications.
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Affiliation(s)
- Sudarshan Singh
- Department of Physics, Indian Institute of Technology, Kharagpur-721302 Kharagpur, India
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Jiang J, Sun J, Gao J, Zhang R. Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. OPTICS EXPRESS 2017; 25:26714-26727. [PMID: 29092155 DOI: 10.1364/oe.25.026714] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2017] [Accepted: 10/07/2017] [Indexed: 06/07/2023]
Abstract
We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along <100> direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.
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Room Temperature Electroluminescence from Tensile-Strained Si 0.13Ge 0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate. MATERIALS 2016; 9:ma9100803. [PMID: 28773923 PMCID: PMC5456644 DOI: 10.3390/ma9100803] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2016] [Revised: 09/13/2016] [Accepted: 09/14/2016] [Indexed: 11/22/2022]
Abstract
Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L) and injection current density (J) with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH) valance band at higher temperatures.
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