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Research into Two Photonic-Integrated Waveguides Based on SiGe Material. MATERIALS 2020; 13:ma13081877. [PMID: 32316298 PMCID: PMC7215922 DOI: 10.3390/ma13081877] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2020] [Revised: 04/12/2020] [Accepted: 04/14/2020] [Indexed: 11/16/2022]
Abstract
SiGe (Silicon Germanium) is a common semiconductor material with many excellent properties, and many photonic-integrated devices are designed and fabricated with SiGe material. In this paper, two photonic-integrated SiGe waveguides are researched, namely the SiGe-SOI (Silicon Germanium-Silicon-On-Insulator) waveguide and the SiGe-OI (Silicon Germanium-On-Insulator) waveguide. In order to verify which structure has the better waveguide performance, two waveguide structures are built, and the effective refractive indexes and the loss characteristics of the two waveguides are analyzed and compared. By simulation, the SiGe-OI optical waveguide has better losses characteristics at a wavelength of 1.55 μm. Finally, SiGe-OI and SiGe-SOI waveguides are fabricated and tested to verify the correctness of theoretical analysis, and the experimental results show that the transmission losses of the SiGe-OI waveguide are respectively decreased by 36.6% and 28.3% at 400 nm and 600 nm waveguide width in comparison with the SiGe-SOI waveguide. The results also show that the SiGe-OI waveguide has better loss characteristics than those of the SiGe-SOI waveguide at the low Ge content.
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Serna S, Vakarin V, Ramirez JM, Frigerio J, Ballabio A, Le Roux X, Vivien L, Isella G, Cassan E, Dubreuil N, Marris-Morini D. Nonlinear Properties of Ge-rich Si 1-xGe x Materials with Different Ge Concentrations. Sci Rep 2017; 7:14692. [PMID: 29116201 PMCID: PMC5677089 DOI: 10.1038/s41598-017-15266-z] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2017] [Accepted: 10/23/2017] [Indexed: 11/09/2022] Open
Abstract
Silicon photonics is a large volume and large scale integration platform for applications from long-haul optical telecommunications to intra-chip interconnects. Extension to the mid-IR wavelength range is now largely investigated, mainly driven by absorption spectroscopy applications. Germanium (Ge) is particularly compelling as it has a broad transparency window up to 15 µm and a much higher third-order nonlinear coefficient than silicon which is very promising for the demonstration of efficient non-linear optics based active devices. Si1−xGex alloys have been recently studied due to their ability to fine-tune the bandgap and refractive index. The material nonlinearities are very sensitive to any modification of the energy bands, so Si1−xGex alloys are particularly interesting for nonlinear device engineering. We report on the first third order nonlinear experimental characterization of Ge-rich Si1−xGex waveguides, with Ge concentrations x ranging from 0.7 to 0.9. The characterization performed at 1580 nm is compared with theoretical models and a discussion about the prediction of the nonlinear properties in the mid-IR is introduced. These results will provide helpful insights to assist the design of nonlinear integrated optical based devices in both the near- and mid-IR wavelength ranges.
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Affiliation(s)
- Samuel Serna
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Orsay, 91405, Orsay cedex, France. .,Laboratoire Charles Fabry, Institut d'Optique Graduate School, CNRS, Université Paris Saclay, 2 Avenue Augustin Fresnel, 91127, Palaiseau cedex, France.
| | - Vladyslav Vakarin
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Orsay, 91405, Orsay cedex, France
| | - Joan-Manel Ramirez
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Orsay, 91405, Orsay cedex, France
| | - Jacopo Frigerio
- L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, 22100, Como, Italy
| | - Andrea Ballabio
- L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, 22100, Como, Italy
| | - Xavier Le Roux
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Orsay, 91405, Orsay cedex, France
| | - Laurent Vivien
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Orsay, 91405, Orsay cedex, France
| | - Giovanni Isella
- L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, 22100, Como, Italy
| | - Eric Cassan
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Orsay, 91405, Orsay cedex, France
| | - Nicolas Dubreuil
- Laboratoire Charles Fabry, Institut d'Optique Graduate School, CNRS, Université Paris Saclay, 2 Avenue Augustin Fresnel, 91127, Palaiseau cedex, France
| | - Delphine Marris-Morini
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Orsay, 91405, Orsay cedex, France
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Ramirez JM, Vakarin V, Gilles C, Frigerio J, Ballabio A, Chaisakul P, Roux XL, Alonso-Ramos C, Maisons G, Vivien L, Carras M, Isella G, Marris-Morini D. Low-loss Ge-rich Si 0.2Ge 0.8 waveguides for mid-infrared photonics. OPTICS LETTERS 2017; 42:105-108. [PMID: 28059186 DOI: 10.1364/ol.42.000105] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We demonstrate low-loss Ge-rich Si0.2Ge0.8 waveguides on Si1-xGex (x from 0 to 0.79) graded substrates operating in the mid-infrared wavelength range at λ=4.6 μm. Propagation losses as low as (1.5±0.5)dB/cm and (2±0.5)dB/cm were measured for the quasi-TE and quasi-TM polarizations, respectively. A total coupling loss (input/output) of only 10 dB was found for waveguide widths larger than 7 μm due to a good fiber-waveguide mode matching. Near-field optical mode profiles measured at the output waveguide facet allowed us to inspect the optical mode and precisely measure the modal effective area of each waveguide providing a good correlation between experiments and simulations. These results put forward the potential of low-index-contrast Si1-xGex waveguides with high Ge concentration as fundamental blocks for mid-infrared photonic integrated circuits.
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