CdS(x)Se(1-x)/ZnS semiconductor nanocrystal laser with sub 10kW/cm(2) threshold and 40nJ emission output at 600 nm

Amplified Spontaneous Emission Threshold Reduction and Operational Stability Improvement in CsPbBr3 Nanocrystals Films by Hydrophobic Functionalization of the Substrate

The use of lead halide perovskites in optoelectronic and photonic devices is mainly limited by insufficient long-term stability of these materials. This issue is receiving growing attention, mainly owing to the operational stability improvement of lead halide perosvkites solar cells. On the contrary, fewer efforts are devoted to the stability improvement of light amplification and lasing. In this report we demonstrate that a simple hydrophobic functionalization of the substrates with hexamethyldisilazane (HMDS) allows to strongly improve the Amplified Spontaneous Emission (ASE) properties of drop cast CsPbBr₃ nanocrystal (NC) thin films. In particular we observe an ASE threshold decrease down to 45% of the value without treatment, an optical gain increase of up to 1.5 times and an ASE operational stability increase of up to 14 times. These results are ascribed to a closer NC packing in the films on HMDS treated substrate, allowing an improved energy transfer towards the larger NCs within the NC ensemble, and to the reduction of the film interaction with moisture. Our results propose hydrophobic functionalization of the substrates as an easy approach to lower the ASE and lasing thresholds, while simultaneously increasing the active material stability.

Electrically control amplified spontaneous emission in colloidal quantum dots

Colloidal quantum dots (CQDs) are highly promising materials for light amplification thanks to their efficient photoluminescence, tunable emission wavelength and low-cost synthesis. Unfortunately, CQDs are suffering from band-edge state degeneracy which demands multiple excitons to achieve population inversion. As a result, non-radiative Auger recombination increases the lasing threshold and limits the gain lifetime. Here, benefiting from the negative charging, we demonstrate that the amplified spontaneous emission (ASE) threshold is controllable in a device where CQD film is exposed to an external electric field. Specifically, singly charged CQDs lower the threshold due to the preexisting electron in the conduction band, while strongly enhanced Auger recombination in doubly charged CQDs stymies the ASE. Experimental results and kinetic equation model show that ASE threshold reduces 10% even if our device only charges ~17% of the CQD population. Our results open new possibilities for controlling exciton recombination dynamics and achieving electrically pumped CQD lasers.

Polymer-II-VI Nanocrystals Blends: Basic Physics and Device Applications to Lasers and LEDs

Hybrid thin films that combine organic conjugated molecules and semiconductors nanocrystals (NCs) have been deeply investigated in the previous years, due to their capability to provide an extremely broad tuning of their electronic and optical properties. In this paper we review the main aspects of the basic physics of the organic-inorganic interaction and the actual state of the art of lasers and light emitting diodes based on hybrid active materials.

Continuous-wave lasing in colloidal quantum dot solids enabled by facet-selective epitaxy

Colloidal quantum dots (CQDs) feature a low degeneracy of electronic states at the band edges compared with the corresponding bulk material, as well as a narrow emission linewidth. Unfortunately for potential laser applications, this degeneracy is incompletely lifted in the valence band, spreading the hole population among several states at room temperature. This leads to increased optical gain thresholds, demanding high photoexcitation levels to achieve population inversion (more electrons in excited states than in ground states-the condition for optical gain). This, in turn, increases Auger recombination losses, limiting the gain lifetime to sub-nanoseconds and preventing steady laser action. State degeneracy also broadens the photoluminescence linewidth at the single-particle level. Here we demonstrate a way to decrease the band-edge degeneracy and single-dot photoluminescence linewidth in CQDs by means of uniform biaxial strain. We have developed a synthetic strategy that we term facet-selective epitaxy: we first switch off, and then switch on, shell growth on the (0001) facet of wurtzite CdSe cores, producing asymmetric compressive shells that create built-in biaxial strain, while still maintaining excellent surface passivation (preventing defect formation, which otherwise would cause non-radiative recombination losses). Our synthesis spreads the excitonic fine structure uniformly and sufficiently broadly that it prevents valence-band-edge states from being thermally depopulated. We thereby reduce the optical gain threshold and demonstrate continuous-wave lasing from CQD solids, expanding the library of solution-processed materials that may be capable of continuous-wave lasing. The individual CQDs exhibit an ultra-narrow single-dot linewidth, and we successfully propagate this into the ensemble of CQDs.

Colloidal nanophotonics: the emerging technology platform

Dating back to decades or even centuries ago, colloidal nanophotonics during the last ten years rapidly extends towards light emitting devices, lasers, sensors and photonic circuitry to manifest itself as an emerging technology platform rather than an entirely academic research field.