Hot electron generation by aluminum oligomers in plasmonic ultraviolet photodetectors

Broadband ultraviolet plasmonic enhanced AlGaN/GaN heterojunction photodetectors with close-packed Al nanoparticle arrays

Plasmonic metallic nanostructures could concentrate optical fields into nanoscale volumes and support efficient light scattering and absorption, which therefore stimulates the continuing development of advanced plasmonic-assisted semiconductor photodetectors. In this work, by fabricating Al nanoparticle (NP) arrays in AlGaN surface using the AAO template transferring method, significant broadband ultraviolet (UV) photoresponse enhancement was demonstrated on AlGaN/GaN heterojunction photodetectors. By deliberately designing the close-packed Al NP arrays, the broadband UV plasmonic resonance with large optical field absorption and strong interface field enhancement are enabled, hence, the highest responsivity exceeding 8.1 A W-1 and maximum external quantum efficiency of 3500% was obtained at the resonance wavelength 292 nm, revealing more than 80 times the excellent enhancement in responsivity. Specifically, owing to coupling among NPs at the Al/AlGaN interface, the smaller size Al NP array exhibits an excellent photoresponse enhancement encompassing the entire UV band compared to the relatively larger size Al NP array. In addition, different photoresponse enhancements depending on the applied bias were observed. The Al NPs detector also demonstrates a fast photoresponse with a rise time of around 60 ms and a relatively long fall time of 1.42 s. This work could be of great significance for gaining a low and efficient approach to achieve plasmonic-empowered heterojunction broadband UV detectors.

Al@TiO2 Core-Shell Nanoparticles for Plasmonic Photocatalysis

Plasmon-induced photocatalysis is a topic of rapidly increasing interest, due to its potential for substantially lowering reaction barriers and temperatures and for increasing the selectivity of chemical reactions. Of particular interest for plasmonic photocatalysis are antenna-reactor nanoparticles and nanostructures, which combine the strong light-coupling of plasmonic nanostructures with reactors that enhance chemical specificity. Here, we introduce Al@TiO₂ core-shell nanoparticles, combining earth-abundant Al nanocrystalline cores with TiO₂ layers of tunable thickness. We show that these nanoparticles are active photocatalysts for the hot electron-mediated H₂ dissociation reaction as well as for hot hole-mediated methanol dehydration. The wavelength dependence of the reaction rates suggests that the photocatalytic mechanism is plasmonic hot carrier generation with subsequent transfer of the hot carriers into the TiO₂ layer. The Al@TiO₂ antenna-reactor provides an earth-abundant solution for the future design of visible-light-driven plasmonic photocatalysts.

Progress of GaN-Based Optoelectronic Devices Integrated with Optical Resonances

Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanisms between optical resonances and quasiparticles, but also unveil the shield of novel optoelectronic devices with superior performances. In this review, the content covers the recent progress of GaN-based optoelectronic devices integrated with plasmonics and/or micro resonators, including the LEDs, photodetectors, solar cells, and light photocatalysis. The authors aim to provide an inspiring insight of recent remarkable progress and breakthroughs, as well as a promising prospect for the future highly-integrated, high speed, and efficient GaN-based optoelectronic devices.

Electrically Excited Plasmonic Ultraviolet Light Sources

The emission of photons from metal-insulator-metal (MIM) nanojunctions through inelastic tunneling of electrically driven electrons is a well-acknowledged approach to develop miniaturized light sources and ultradense photonic instruments. Generally, the existing research in the optimization of electromigrated tunneling junctions is principally centered on the generation of visible and near-infrared lights. This study reports on the near-ultraviolet (NUV, λ ≈ 355 nm) light emission from enhanced tunneling of electrons using aluminum nanoelectrodes. Compared to conventional noble metals, the high electron density and low screening of aluminum enable supporting of pronounced local fields at high energies (i.e, ultraviolet (UV)). As the color of light can be straightforwardly determined by the properties of tunneling structures, the exquisite features of aluminum have empowered the fashioning of tunneling devices that are able to effectively sustain plasmons at short wavelengths and emit UV light with high photon yield. This demonstration is a breakthrough in the generation of high-energy beams using electrically excited aluminum tunneling platforms, which promisingly accelerates the implementation of electrically tunable and ultradense UV light sources.

Aluminum Plasmonics Enriched Ultraviolet GaN Photodetector with Ultrahigh Responsivity, Detectivity, and Broad Bandwidth

Plasmonics have been well investigated on photodetectors, particularly in IR and visible regimes. However, for a wide range of ultraviolet (UV) applications, plasmonics remain unavailable mainly because of the constrained optical properties of applicable plasmonic materials in the UV regime. Therefore, an epitaxial single-crystalline aluminum (Al) film, an abundant metal with high plasma frequency and low intrinsic loss is fabricated, on a wide bandgap semiconductive gallium nitride (GaN) to form a UV photodetector. By deliberately designing a periodic nanohole array in this Al film, localized surface plasmon resonance and extraordinary transmission are enabled; hence, the maximum responsivity (670 A W-1) and highest detectivity (1.48 × 1015 cm Hz1/2 W-1) is obtained at the resonance wavelength of 355 nm. In addition, owing to coupling among nanoholes, the bandwidth expands substantially, encompassing the entire UV range. Finally, a Schottky contact is formed between the single-crystalline Al nanohole array and the GaN substrate, resulting in a fast temporal response with a rise time of 51 ms and a fall time of 197 ms. To the best knowledge, the presented detectivity is the highest compared with those of other reported GaN photodetectors.

Strategy of All-Inorganic Cs3Cu2I5/Si-Core/Shell Nanowire Heterojunction for Stable and Ultraviolet-Enhanced Broadband Photodetectors with Imaging Capability

In this study, for the first time, the integration of nontoxic ternary copper halide Cs₃Cu₂I₅ with one-dimensional Si nanowires (NWs) was reported to achieve an ultraviolet (UV)-enhanced Si NW broadband photodetector. A compact and uniform coverage of Cs₃Cu₂I₅ on the top and sidewall of Si NWs formed a core/shell heterostructure, in which Si NWs served as the growth template and the electron-transport layer, and Cs₃Cu₂I₅ was employed as the UV photoactive material and the hole-transport layer. The as-fabricated Cs₃Cu₂I₅/Si-core/shell NW photodetector demonstrates a multiband photodetection from the deep UV to near-infrared region, a fast response speed of 92.5/189.2 μs (265 nm), and a high photoresponsivity of 130 mA/W, nearly 600 times as much as the reference device constructed using Si NWs. More importantly, the proposed photodetector exhibits an excellent stability in air ambient. Typically, it could endure a high temperature of 60 °C for 11 h consecutive working; after storage in air ambient for two weeks, its photodetection ability can almost be retained. Additionally, high-resolution UV imaging applications were presented by employing the proposed photodetector as sensing pixels. These obtained results verify the effectiveness of the Cs₃Cu₂I₅/Si-core/shell NW heterojunction strategy for UV-enhanced broadband photodetection, making such a device really possible for practical applications.

Quantum Leap from Gold and Silver to Aluminum Nanoplasmonics for Enhanced Biomedical Applications

Nanotechnology has been used in many biosensing and medical applications, in the form of noble metal (gold and silver) nanoparticles and nanostructured substrates. However, the translational clinical and industrial applications still need improvements of the efficiency, selectivity, cost, toxicity, reproducibility, and morphological control at the nanoscale level. In this review, we highlight the recent progress that has been made in the replacement of expensive gold and silver metals with the less expensive aluminum. In addition to low cost, other advantages of the aluminum plasmonic nanostructures include a broad spectral range from deep UV to near IR, providing additional signal enhancement and treatment mechanisms. New synergistic treatments of bacterial infections, cancer, and coronaviruses are envisioned. Coupling with gain media and quantum optical effects improve the performance of the aluminum nanostructures beyond gold and silver.

Ultra-high sensitivity sensing based on ultraviolet plasmonic enhancements in semiconductor triangular prism meta-antenna systems

Silicon (Si), germanium (Ge), and gallium arsenide (GaAs) are familiar semiconductors that always act in the role of optical dielectrics. However, these semiconductors also have plasmonic behaviors in ultraviolet (UV) ranges due to the strong interband transitions or valence electrons. And few studies are aimed at investigating plasmonic properties in the semiconductor at the nanoscale. In this work, we discuss UV plasmonics and sensing properties in single and dimer Si, Ge, and GaAs triangular prism meta-antenna systems. The results show that obvious local surface plasmon resonances (LSPRs) can be realized in the proposed triangular prism meta-antennas, and the resonant wavelength, electromagnetic field distribution, surface charge distribution, and surface current density can be effectively tuned by structural and material parameters. In addition, we also find that the Si triangular prism meta-antenna shows more intense plasmonic responses in UV ranges than that in the Ge or GaAs triangular prism nanostructures. Especially, the phase difference between the triangular prism nanostructure and light source can effectively regulate the symbol and value of the surface charge. Moreover, the great enhancement of electric field can be seen in the dimer triangular prism meta-antennas when the distance of the gap is g<5 nm, especially g=1 nm. The most interesting result is that the maximum of refractive index sensitivity s and figure of merit (FoM) are greatly enlarged in dimer triangular prism meta-antennas. Particularly, the sensitivity can reach up to 215 nm/RIU in the dimer GaAs triangular prism meta-antennas, which is improved more than one order of magnitude. These research results may play important roles in applications of the photo detecting, plasmonic sensing and disinfecting in UV ranges.

Photonic and Thermal Modelling of Microrings in Silicon, Diamond and GaN for Temperature Sensing

Staying in control of delicate processes in the evermore emerging field of micro, nano and quantum-technologies requires suitable devices to measure temperature and temperature flows with high thermal and spatial resolution. In this work, we design optical microring resonators (ORRs) made of different materials (silicon, diamond and gallium nitride) and simulate their temperature behavior using several finite-element methods. We predict the resonance frequencies of the designed devices and their temperature-induced shift (16.8 pm K-1 for diamond, 68.2 pm K-1 for silicon and 30.4 pm K-1 for GaN). In addition, the influence of two-photon-absorption (TPA) and the associated self-heating on the accuracy of the temperature measurement is analysed. The results show that owing to the absence of intrinsic TPA-processes self-heating at resonance is less critical in diamond and GaN than in silicon, with the threshold intensity I th = α / β , α and β being the linear and quadratic absorption coefficients, respectively.

Electrochromic Photodetectors: Toward Smarter Glasses and Nano Reflective Displays via an Electrolytic Mechanism

Electrochromic devices, serving as smart glasses, have not yet been intelligent enough to regulate lighting conditions independent of external photosensing devices. On the other hand, their bulky sandwich structures have been suffering setbacks utilized for reflective displays in an effort to compete with mature emissive displays. The key to resolve both problems lies in incorporating the photosensing function into electrochromic devices while simplifying their configuration via replacing ionic electrolytes. However, so far it has not yet been achieved because of the essential operating difference between the optoelectronic devices and the ionic devices. Herein, a concept of a smarter and thinner device: "electrochromic photodetector" is proposed to solve such problems. It is all-solid-state and electrolyte-free and operates with a simple thin metal-semiconductor-metal structure via an electrolytic mechanism. As a proof of concept, a configuration of the electrochromic photodetector is presented in this work based on a tungsten trioxide (WO₃) thin film deposited on Au electrodes via facile, low-cost solution processes. The electrochromic photodetector switches between its photosensing and electrochromic functions via voltage modulation within 5 V, which is the result of the semiconductor-metal transition. The transition mechanism is further analyzed to be the voltage-triggered reversible oxygen/water vapor adsorption/intercalation from ambient air.

Generation of magnetoelectric photocurrents using toroidal resonances: a new class of infrared plasmonic photodetectors

The detection of photons by plasmonic subwavelength devices underpins spectroscopy, low-power wavelength division multiplexing for short-distance optical communication, imaging, and time-gated distance measurements. In this work, we demonstrate infrared light-sensing using toroidal dipole-resonant plasmonic multipixel meta-atoms. As a key factor, the toroidal dipolar mode is an extremely localized electromagnetic excitation independent of the conventional multipoles. The exquisite behavior of this mode enables significant enhancements in the localized electromagnetic field and absorption cross-section, which boost the field confinement at the metal-dielectric interfaces. The proposed novel approach offers an advanced photodetection of the incident light based on substantial confinement of electromagnetic fields in a tiny spot, giving rise to the generation of hot carriers and a large photocurrent. Using both n- and p-type silicon (Si) substrates, we exploited the free-carrier absorption advantage of p-type Si to devise a high-responsivity device. Our findings show an unprecedented performance for infrared plasmonic photodetectors with low noises, high detectivity and remarkable internal quantum efficiency (IQE). Moreover, the tailored photodetection device provides a significant linear dynamic range of 46 dB and a fast operation speed. Our narrowband infrared light sensing photodevice offers a promising approach for further research studies over the optoelectronic and plasmonic tools and paves a viable route for low-dimensional photonic systems.

A Quantum Chemistry Approach Based on the Analogy with π-System in Polymers for a Rapid Estimation of the Resonance Wavelength of Nanoparticle Systems

In this paper, the Variational Method based on the Hückel Theory is applied to NPs chain and aggregate systems in order to estimate the energy of the plasmon and, in turn, the resonance wavelength shift, which is caused by the interaction of adjacent NPs. This method is based on the analogies of NPs dipole interactions and the π-system in molecules. Differently from the Hartree-Fock method that is a self-consistent model, in this approach, the input data that this method requires is the dimer energy shift with respect to single NPs. This enables us to acquire a simultaneous estimation of the wavefunctions of the NPs system as well as the expectation energy value of every kind of NPs system. The main advantage of this approach is the rapid response and ease of application to every kind of geometries and spacing from the linear chain to clusters, without the necessity of a time-consuming calculation. The results obtained with this model are closely aligned to related literature and open the way to further development of this methodology for investigating other properties of NPs systems.

Imaging Plasmon Hybridization of Fano Resonances via Hot-Electron-Mediated Absorption Mapping

The inhibition of radiative losses in dark plasmon modes allows storing electromagnetic energy more efficiently than in far-field excitable bright-plasmon modes. As such, processes benefiting from the enhanced absorption of light in plasmonic materials could also take profit of dark plasmon modes to boost and control nanoscale energy collection, storage, and transfer. We experimentally probe this process by imaging with nanoscale precision the hot-electron driven desorption of thiolated molecules from the surface of gold Fano nanostructures, investigating the effect of wavelength and polarization of the incident light. Spatially resolved absorption maps allow us to show the contribution of each element of the nanoantenna in the hot-electron driven process and their interplay in exciting a dark plasmon mode. Plasmon-mode engineering allows control of nanoscale reactivity and offers a route to further enhance and manipulate hot-electron driven chemical reactions and energy-conversion and transfer at the nanoscale.

Plasmonics in the Ultraviolet with Aluminum, Gallium, Magnesium and Rhodium

Ultraviolet plasmonics (UV) has become an active topic of research due to the new challenges arising in fields such as biosensing, chemistry or spectroscopy. Recent studies have pointed out aluminum, gallium, magnesium and rhodium as promising candidates for plasmonics in the UV range. Aluminum and magnesium present a high oxidation tendency that has a critical effect in their plasmonic performance. Nevertheless, gallium and rhodium have drawn a lot of attention because of their low tendency of oxidation and, at the same time, good plasmonic response in the UV and excellent photocatalytic properties. Here, we present a short overview of the current state of UV plasmonics with the latest findings in the plasmonic response and applications of aluminum, gallium, magnesium and rhodium nanoparticles.

Highly Wavelength-Selective Enhancement of Responsivity in Ag Nanoparticle-Modified ZnO UV Photodetector

We proposed and demonstrated Ag nanoparticles (NPs)-decorated ZnO photodetectors for UV light sensing. After decoration of their surface with random Ag NPs, the dark current density of ZnO UV photodetectors decreases obviously. Moreover, the device exhibits an obvious increase in peak responsivity at around 380 nm, which can be attributed to the narrow-band quadrupole plasmon resonance of Ag NPs in the UV range. Meanwhile, the responsivity at the other wavelengths decreases a lot. As a result, the response peak becomes more significant, and the response of the devices presents an excellent wavelength selectivity after covering with Ag NPs. The detailed mechanism for this phenomenon was explained. We believe that our findings would open a way to harness the high-order plasmon modes in the field of UV optoelectronic devices.

Transition from capacitive coupling to direct charge transfer in asymmetric terahertz plasmonic assemblies

We experimentally and numerically analyze the charge transfer THz plasmons using an asymmetric plasmonic assembly of metallic V-shaped blocks. The asymmetric design of the blocks allows for the excitation of classical dipolar and multipolar modes due to the capacitive coupling. Introducing a conductive microdisk between the blocks, we facilitated the excitation of the charge transfer plasmons and studied their characteristics along with the capacitive coupling by varying the size of the disk.