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Cheng X, Dong S, Zhi S, Paschel S, Balasa I, Ristau D, Wang Z. Waterproof coatings for high-power laser cavities. LIGHT, SCIENCE & APPLICATIONS 2019; 8:12. [PMID: 30675346 PMCID: PMC6342822 DOI: 10.1038/s41377-018-0118-6] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2018] [Revised: 12/09/2018] [Accepted: 12/17/2018] [Indexed: 05/14/2023]
Abstract
With the ever-increasing laser power and repetition rate, thermal control of laser media is becoming increasingly important. Except for widely used air cooling or a bonded heat sink, water cooling of a laser medium is more effective in removing waste heat. However, how to protect deliquescent laser media from water erosion is a challenging issue. Here, novel waterproof coatings were proposed to shield Nd:Glass from water erosion. After clarifying the dependence of the waterproof property of single layers on their microstructures and pore characteristics, nanocomposites that dope SiO2 in HfO2 were synthesized using an ion-assisted co-evaporation process to solve the issue of a lack of a high-index material that simultaneously has a dense amorphous microstructure and wide bandgap. Hf0.7Si0.3O2/SiO2 multifunctional coatings were finally shown to possess an excellent waterproof property, high laser-induced damage threshold (LIDT) and good spectral performance, which can be used as the enabling components for thermal control in high-power laser cavities.
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Affiliation(s)
- Xinbin Cheng
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092 China
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092 China
- IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai, 200240 China
| | - Siyu Dong
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092 China
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092 China
| | - Song Zhi
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092 China
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092 China
| | - Sebastian Paschel
- Laser Zentrum Hannover e.V., Laser Components Department, Hannover, 30419 Germany
| | - Istvan Balasa
- Laser Zentrum Hannover e.V., Laser Components Department, Hannover, 30419 Germany
| | - Detlev Ristau
- Laser Zentrum Hannover e.V., Laser Components Department, Hannover, 30419 Germany
| | - Zhanshan Wang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092 China
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092 China
- IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai, 200240 China
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Abstract
The laser damage behavior of three-dimensional photonic crystals (3D-PCs) with an opal structure is investigated using both experimental and simulation methods. Polystyrene (PS) colloidal crystals films with a reflection peak at 1064 nm are used as the model material. Disordered films (DF) are fabricated with PS microspheres as contrast samples. The laser-induced damage threshold (LIDT) of 3D-PCs is tested, which is as 2.35 times high as the LIDT of DF. All laser damages are derived from defects in 3D-PCs, implying that the LIDT of ideal 3D-PCs will be significantly increased. The simulation results show that the electric field is contained in the pores of 3D-PCs while it is reduced in the PS microspheres, which may decrease the absorption of laser energy by 3D-PCs. In contrast, the electric field distribution is irregular in DF. Enhanced electric field areas are located in both the pores and microspheres of DF. Considering higher electric field intensity causes more energy absorption and higher temperature, the DF have a lower LIDT. The 3D-PCs structure uses ordered vacancy to contain and strike back laser energy and can increase the LIDT without changing the chemical composition of materials.
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Affiliation(s)
- Lei Pan
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Hongbo Xu
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Ruizhen Lv
- Center for Composite Materials and Structure, Harbin Institute of Technology, Harbin, 150001, China
| | - Jun Qiu
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China.
| | - Jiupeng Zhao
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China.
| | - Yao Li
- Center for Composite Materials and Structure, Harbin Institute of Technology, Harbin, 150001, China.
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Liu F, Dong S, Zhang J, Jiao H, Ma B, Wang Z, Cheng X. Interface and material engineering for zigzag slab lasers. Sci Rep 2017; 7:16699. [PMID: 29196754 PMCID: PMC5711792 DOI: 10.1038/s41598-017-16968-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2017] [Accepted: 11/19/2017] [Indexed: 11/25/2022] Open
Abstract
Laser damage of zigzag slab lasers occurs at interface between laser crystal and SiO2 film. Although an additional HfO2 layer could be used to manipulate electric-field on the crystal-film interface, their high absorption and polycrystalline structure were unacceptable. SiO2 was then doped in HfO2 to suppress its crystallization and to achieve low absorption by annealing. HfxSi1−xO2 nanocomposite layers were then inserted between laser crystal and SiO2 film to minimize electric-field at crystal-film interface. Laser damage resistance of this new architecture is two times higher than that of traditional zigzag slab lasers.
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Affiliation(s)
- Fei Liu
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China.,Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Siyu Dong
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China.,Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Jinlong Zhang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China.,Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.,IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Hongfei Jiao
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China.,Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Bin Ma
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China.,Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Zhanshan Wang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China.,Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.,IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xinbin Cheng
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China. .,Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China. .,IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai, 200240, China.
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