Simplified modeling and optimization of silicon modulators based on free-carrier plasma dispersion effect

Semi-embedded slot waveguide electro-optic modulator

Electro-optic modulators are essential devices on silicon photonic chips in modern optical communication networks. This paper presents a compact, low-loss electro-optic modulator. The modulation efficiency is greatly improved by embedding the lower half of the slot waveguide into the buried oxide layer and inserting graphene at the junction. The interaction of graphene with an optical field in a waveguide is studied using the finite element method. The functions of phase modulation and absorption modulation are realized by changing the gate voltage to change the chemical potential of graphene. The semi-embedded slot waveguide optical modulator has a length of 50 µm. After simulation verification, it can be used as an electro-absorption modulator and can achieve a modulation depth of 26.38 dB and an insertion loss of 0.60 dB. When used as an electro-refractive modulator, it can be realized with a linear change of phase from zero to π; the total insertion loss is only 0.59 dB. The modulator has a modulation bandwidth of 79.6 GHz, and the energy consumption as electro-absorption and electro-refraction modulation are 0.51 and 1.92 pj/bit, respectively. Compared with common electro-optic modulators, the electro-optic modulator designed in this paper has a higher modulation effect and also takes into account the advantages of low insertion loss and low energy consumption. This research is helpful for the design of higher-performance optical communication network devices.

High-speed tunable optical absorber based on a coupled photonic crystal slab and monolayer graphene structure

Reconfigurable metasurfaces have been pursued intensively in recent years for the ability to modulate the light after fabrication. However, the optical performances of these devices are limited by the efficiency, actuation response speed and mechanical control for reconfigurability. In this paper, we propose a fast tunable optical absorber based on the critical coupling of resonance mode to absorptive medium and the plasma dispersion effect of free carriers in semiconductor. The tunable absorber structure includes a single-layer or bi-layer silicon photonic crystal slab (PCS) to induce a high-Q optical resonance, a monolayer graphene as the absorption material, and bottom reflector to remove transmission. By modulating the refractive index of PCS via the plasma dispersion of the free carrier, the critical coupling condition is shifted in spectrum, and the device acquires tuning capability between perfect absorption and total reflection of the incident monochromatic light beam. Simulation results show that, with silicon index change of 0.015, the tunable absorption of light can achieve the reflection/absorption switching, and full range of reflection phase control is feasible in the over coupling region. The proposed reconfigurable structure has potential applications in remote sensing, free-space communications, LiDAR, and imaging.

1 GHz electro-optical silicon-germanium modulator in the 5-9 µm wavelength range

Spectroscopy in the mid-infrared (mid-IR) wavelength range is a key technique to detect and identify chemical and biological substances. In this context, the development of integrated optics systems paves the way for the realization of compact and cost-effective sensing systems. Among the required devices, an integrated electro-optical modulator (EOM) is a key element for advanced sensing circuits exploiting dual comb spectroscopy. In this paper, we have experimentally demonstrated an integrated EOM operating in a wide wavelength range, i.e. from 5 to 9 µm at radio frequency (RF) as high as 1 GHz. The modulator exploits the variation of free carrier absorption in a Schottky diode embedded in a graded silicon germanium (SiGe) photonic waveguide.

Silicon modulator based on omni junctions by effective 3D Monte-Carlo method

3D doping structure has significant advantages in modulation efficiency and loss compared with 2D modulator doping profiles. However, to the best of our knowledge, previous work on 3D simulation methods for interdigitated doping designs applied simplified models, which prohibited complex 3D doping. In this work, innovative omni junctions, based on the effective 3D Monte-Carlo method, are believed to be the first proposed for high-performance modulators. Simulation results show that the modulation efficiency reaches 0.88 V·cm, while the loss is only 16 dB/cm, with capacitance below 0.42 pF/mm. This work provides a modulator design with superior modulation efficiency and serviceability for high-speed datacom.

A Broadband Polarization-Insensitive Graphene Modulator Based on Dual Built-in Orthogonal Slots Plasmonic Waveguide

A broadband polarization-insensitive graphene modulator has been proposed. The dual built-in orthogonal slots waveguide allows polarization independence for the transverse electric (TE) mode and the transverse magnetic (TM) mode. Due to the introduction of metal slots in both the vertical and horizontal directions, the optical field as well as the electro-absorption of graphene are enhanced by the plasmonic effect. The proposed electro-optic modulator shows a modulation depth of 0.474 and 0.462 dB/μm for two supported modes, respectively. An ultra-low effective index difference of 0.001 can be achieved within the wavelength range from 1100 to 1900 nm. The 3 dB-bandwidth is estimated to be 101 GHz. The power consumption is 271 fJ/bit at a modulation length of 20 μm. The proposed modulator provides high speed broadband solutions in microwave photonic systems.

2D modeling of silicon optical PN phase shifter

In this paper, a 2D model of a silicon lateral PN optical phase shifter is presented, which can be used for multiple-parameter study and optimization of device performance without the need for any commercial numerical tools. The model shows good agreement with technology computer-aided design (TCAD) simulation and can be used to calculate the phase shift, absorption loss, modulation efficiency, and insertion loss of the phase shifter. Multiple-parameter study includes the waveguide dimensions, operating wavelength, cladding material, doping concentrations, junction offset, and applied voltage. The model employs the effective index method to determine the mode properties and construct the 2D mode field. The PN diode is modeled by taking into account the fringing electric field at the core-cladding interface, which results in a wider depletion region near the interface. Multiple-loss components are discussed, and the scattering loss and free-carrier absorption are modeled using Payne-Lacey and Soref models, respectively. The model uses 2D modal overlap with 2D carrier distribution across the waveguide to calculate the phase shifter performance metrics. The algorithm used to model the 2D nature of the PN diode depletion region is presented in detail and uses mathematical and analytical formulas instead of numerical methods, making the model faster and easy to implement, with accuracy on par with commercial tools.

DAC-less PAM-4 generation in the O-band using a silicon Mach-Zehnder modulator

We demonstrate 20-Gb/s 4-level pulse amplitude modulation (PAM-4) signal generation using a silicon Mach-Zehnder modulator (MZM) in the O-band. The modulator is driven by two independent binary streams, and the PAM-4 signal is thus generated directly on the chip, avoiding the use of power-hungry digital-to-analog converters (DACs). With optimized amplitude levels of the binary signals applied to the two arms of the MZM, a pre-forward error correction (FEC) bit-error rate (BER) as low as 7.6 × 10^-7 is obtained. In comparison with a commercially available LiNbO₃ modulator, the penalty is only 2 dB at the KP4 FEC threshold of 2.2 × 10^-4.

Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band

In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (VπLπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 V_pp, compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gb ps.