High-speed low-chirp PAM-4 transmission based on push-pull silicon photonic microring modulators

Mach-Zehnder interferometric engineering in silicon optical modulators: towards extrinsic OMA enhancement

The realization of a high dynamic extinction ratio (ER) and optical modulation amplitude (OMA) while keeping the optical and radio-frequency (RF) signal losses low is a major issue for carrier-depletion Mach-Zehnder (MZ) silicon optical modulators. However, there is still room to improve modulator performance by applying the information gained from recent advanced testing technology to the modulator design. In this study, the extrinsic OMA (E-OMA) enhancement effect, which was discovered through the evaluation process and by revisiting the physics of the MZ interferometer (MZI), is investigated. First, we raise the issue of a periodic ripple observed on an MZI spectrum that has previously been overlooked but can affect modulator performance and attribute it to optical resonance between the multi-mode interferometers that compose an MZI. We show that, although having the effect of reducing the dynamic ER in the push-pull regime, as demonstrated experimentally, this resonance can take them beyond the realm of modulation efficiency and generate an E-OMA enhancement effect in the single-arm-drive regime without involving any optical and RF signal losses. By comparing two modulator structures that generate resonance internally, we successfully identify the factors that are responsible for increasing the E-OMA enhancement effect. We reveal that theoretically the OMA can easily be increased by 0.45 dB or more.

Recent Progress in Silicon-Based Slow-Light Electro-Optic Modulators

As an important optoelectronic integration platform, silicon photonics has achieved significant progress in recent years, demonstrating the advantages on low power consumption, low cost, and complementary metal–oxide–semiconductor (CMOS) compatibility. Among the different silicon photonics devices, the silicon electro-optic modulator is a key active component to implement the conversion of electric signal to optical signal. However, conventional silicon Mach–Zehnder modulators and silicon micro-ring modulators both have their own limitations, which will limit their use in future systems. For example, the conventional silicon Mach–Zehnder modulators are hindered by large footprint, while the silicon micro-ring modulators have narrow optical bandwidth and high temperature sensitivity. Therefore, developing a new structure for silicon modulators to improve the performance is a crucial research direction in silicon photonics. Meanwhile, slow-light effect is an important physical phenomenon that can reduce the group velocity of light. Applying slow-light effect on silicon modulators through photonics crystal and waveguide grating structures is an attractive research point, especially in the aspect of reducing the device footprint. In this paper, we review the recent progress of silicon-based slow-light electro-optic modulators towards future communication requirements. Beginning from the principle of slow-light effect, we summarize the research of silicon photonic crystal modulators and silicon waveguide grating modulators in detail. Simultaneously, the experimental results of representative silicon slow-light modulators are compared and analyzed. Finally, we discuss the existing challenges and development directions of silicon-based slow-light electro-optic modulators for the practical applications.

Low-chirp push-pull dual-ring modulator with 144 Gb/s PAM-4 data transmission

We experimentally demonstrate a low-chirp high-speed push-pull dual-ring modulator. The device is formed by two parallel cascaded add-drop ring modulators which has a Fabry-Perot resonance spectrally similar as electromagnetically induced transparency (EIT) effect. Differential drive signals are applied to the two rings to shift the individual resonances towards opposite directions, creating intensity modulation with suppressed frequency chirp. We present static and dynamic characterization of the device, including chirp parameter. We also demonstrate 144 Gb/s PAM-4 data transmission with 1-km standard single-mode fiber (SSMF) with BER below hard-decision forward error correction (HD-FEC) threshold with 7% overhead.

DAC-less PAM-4 generation in the O-band using a silicon Mach-Zehnder modulator

We demonstrate 20-Gb/s 4-level pulse amplitude modulation (PAM-4) signal generation using a silicon Mach-Zehnder modulator (MZM) in the O-band. The modulator is driven by two independent binary streams, and the PAM-4 signal is thus generated directly on the chip, avoiding the use of power-hungry digital-to-analog converters (DACs). With optimized amplitude levels of the binary signals applied to the two arms of the MZM, a pre-forward error correction (FEC) bit-error rate (BER) as low as 7.6 × 10^-7 is obtained. In comparison with a commercially available LiNbO₃ modulator, the penalty is only 2 dB at the KP4 FEC threshold of 2.2 × 10^-4.

8-channel WDM silicon photonics transceiver with SOA and semiconductor mode-locked laser

We demonstrate an integrated 8 by 14 Gbps dense wavelength division multiplexed silicon photonics transceiver that makes use of an external mode-locked laser as a light source and a single semiconductor optical amplifier for post-modulation signal amplification. Remaining components necessary for modulation, filtering and (de‑)multiplexing are monolithically integrated in a single chip. In all system experiments, all eight channels are jointly operated with independent data streams in order to include impairments arising out of nonlinear effects inside the SOA while benchmarking the system performance. The transmitter, measured with a commercial reference receiver, supports on-off keying data transmission with an uncorrected BER ranging between 1e-5 and 5e-7 for all channels in back-to-back configuration and between 8e-4 and 1e-5 after 10 km transmission (both PRBS 2³¹-1). The three best channels of the full link consisting in the silicon photonics transmitter operated with the silicon photonics receiver in back-to-back configuration maintain a BER better than the targeted 5e-5. Based on link budget modeling, we expect this target to be reached for all 8 channels pending improvement of the receiver offset compensation loop.