1
|
Khan MF, Sadaqat S, Khan MA, Rehman S, Subhani WS, Ouladsmane M, Rehman MA, Ali F, Lipsanen H, Sun Z, Eom J, Ahmed F. Broadening spectral responses and achieving environmental stability in SnS 2/Ag-NPs/HfO 2 flexible phototransistors. NANOSCALE 2024; 16:3622-3630. [PMID: 38273810 DOI: 10.1039/d3nr04626e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Layered two-dimensional (2D) materials have gained popularity thanks to their atomically thin physique and strong coupling with light. Here, we investigated a wide band gap (≥ 2 eV) 2D material, i.e., tin disulfide (SnS2), and decorated it with silver nanoparticles, Ag-NPs, for broadband photodetection. Our results show that the SnS2/Ag-NPs devices exhibit broadband photodetection ranging from the ultraviolet to near-infrared (250-1050 nm) spectrum with decreased rise/decay times from 8/20 s to 7/16 s under 250 nm wavelength light compared to the bare SnS2 device. This is attributed to the localized surface plasmon resonance effect and the wide band gap of SnS2 crystal. Furthermore, the HfO2-passivated SnS2/Ag-NPs devices exhibited high photodetection performance in terms of photoresponsivity (∼12 500 A W-1), and external quantum efficiency (∼6 × 106%), which are significantly higher compared to those of bare SnS2. Importantly, after HfO2 passivation, the SnS2/Ag-NPs photodetector maintained the stable performance for several weeks with merely ∼5.7% reduction in photoresponsivity. Lastly, we fabricated a flexible SnS2/Ag-NPs photodetector, which shows excellent and stable performance under various bending curvatures (0, 20, and 10 mm), as it retains ∼80% of its photoresponsivity up to 500 bending cycles. Thus, our study provides a simple route to realize broadband and stable photoactivity in flexible 2D material-based devices.
Collapse
Affiliation(s)
- Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Sana Sadaqat
- Department of Physics, Riphah International University, Faisalabad Campus, 44000, Pakistan
| | - Muhammad Asghar Khan
- Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea.
| | - Shania Rehman
- Department of Semiconductor System Engineering, Sejong University, Seoul 05006, Republic of Korea
| | | | - Mohamed Ouladsmane
- Department of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia
| | - Malik Abdul Rehman
- Department of Chemical Engineering, New Uzbekistan University, Tashkent, 100007, Uzbekistan
| | - Fida Ali
- Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland.
| | - Harri Lipsanen
- Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland.
| | - Zhipei Sun
- Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland.
| | - Jonghwa Eom
- Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea.
| | - Faisal Ahmed
- Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland.
| |
Collapse
|
2
|
Gan X, Lei D. Plasmonic-metal/2D-semiconductor hybrids for photodetection and photocatalysis in energy-related and environmental processes. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2022.214665] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
|
3
|
Lightwave nano-converging enhancement by an arrayed optical antenna based on metallic nano-cone-tips for CMOS imaging detection. Sci Rep 2022; 12:15761. [PMID: 36131000 PMCID: PMC9492716 DOI: 10.1038/s41598-022-20077-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Accepted: 09/08/2022] [Indexed: 11/08/2022] Open
Abstract
A kind of gold-coated glass nano-cone-tips (GGNCTs) is developed as an arrayed optical antenna for highly receiving and converging incident lightwaves. A local light field enhancement factor (LFEF) of ~ 2 × 104 and maximum light absorption of ~ 98% can be achieved. The near-field lightwave measurements at the wavelength of 633 nm show that the surface net charges over a single GGNCT make a typical dipole oscillation and the energy transmits along the wave vector orientation, thus leading to a strong local light field enhancement. An effective detection method by near-field coupling an arrayed GGNCT and complementary metal-oxide-semiconductor (CMOS) sensor for highly efficient imaging detection is proposed. The lightwave detection at several wavelengths, including typical 473 nm, 532 nm, 671 nm, and 980 nm, shows a notable characteristic that a better capability of the net charge distribution adjusting and localized aggregating can be obtained at the absorption peak of the GGNCT developed and a stronger signal detection achieved. The research lays a foundation for further developing a light detector with an ideal optoelectronic sensitivity and broad spectral suitability, which is based on integrating GGNCTs as an arrayed optical antenna with common sensors.
Collapse
|
4
|
Zou J, Huang Y, Wang W, Li C, Wei S, Liu H, Luo L, Du W, Shen K, Ren A, Wu J. Plasmonic MXene Nanoparticle-Enabled High-Performance Two-Dimensional MoS 2 Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:8243-8250. [PMID: 35104399 DOI: 10.1021/acsami.1c22074] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) molybdenum disulfide (MoS2) has emerged as a prospective candidate for photodetection. However, due to the surface defects formed during the synthesis, the low photoresponse of 2D MoS2 photodetectors restricts its practical applications. Here, we developed a hybrid plasmonic structure that integrates MXene nanoparticles (MNPs) and 2D MoS2. With the introduction of MNPs, light waves are concentrated on MoS2 nanosheets via a strong localized surface plasmon resonance. Consequently, MNPs-decorated MoS2 photodetectors exhibit an improved photoresponse, including a higher responsivity (20.67 A/W), a larger detectivity of 5.39 × 1012 Jones, and a maximum external quantum efficiency of over 5000%. A 150-fold enhanced detectivity (2.33 × 1012 Jones) was achieved under 635 nm light illumination in the optimized device. These results provide an alternative approach for improving the photoresponse of MoS2 photodetectors.
Collapse
Affiliation(s)
- Jihua Zou
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yixuan Huang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Wenhao Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Caihong Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Shunyong Wei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hezhuang Liu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Lingzhi Luo
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Wen Du
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Kai Shen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Aobo Ren
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
| |
Collapse
|
5
|
Sundararaju U, Mohammad Haniff MAS, Ker PJ, Menon PS. MoS 2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review. MATERIALS (BASEL, SWITZERLAND) 2021; 14:1672. [PMID: 33805402 PMCID: PMC8037851 DOI: 10.3390/ma14071672] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 03/11/2021] [Accepted: 03/18/2021] [Indexed: 11/17/2022]
Abstract
A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device's photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.
Collapse
Affiliation(s)
- Umahwathy Sundararaju
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Malaysia; (U.S.); (M.A.S.M.H.)
| | | | - Pin Jern Ker
- Institute of Sustainable Energy (ISE), Universiti Tenaga Nasional (UNITEN), Kajang 43000, Malaysia;
| | - P. Susthitha Menon
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Malaysia; (U.S.); (M.A.S.M.H.)
| |
Collapse
|
6
|
Fast and Low-Cost Synthesis of MoS2 Nanostructures on Paper Substrates for Near-Infrared Photodetectors. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11031234] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
Recent advances in the production and development of two-dimensional transition metal dichalcogenides (2D TMDs) allow applications of these materials, with a structure similar to that of graphene, in a series of devices as promising technologies for optoelectronic applications. In this work, molybdenum disulfide (MoS2) nanostructures were grown directly on paper substrates through a microwave-assisted hydrothermal synthesis. The synthesized samples were subjected to morphological, structural, and optical analysis, using techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman. The variation of synthesis parameters, as temperature and synthesis time, allowed the manipulation of these nanostructures during the growth process, with alteration of the metallic (1T) and semiconductor (2H) phases. By using this synthesis method, two-dimensional MoS2 nanostructures were directly grown on paper substrates. The MoS2 nanostructures were used as the active layer, to produce low-cost near-infrared photodetectors. The set of results indicates that the interdigital MoS2 photodetector with the best characteristics (responsivity of 290 mA/W, detectivity of 1.8 × 109 Jones and external quantum efficiency of 37%) was obtained using photoactive MoS2 nanosheets synthesized at 200 °C for 120 min.
Collapse
|
7
|
Han X, Song P, Xing J, Chen Z, Li D, Xu G, Zhao X, Ma F, Rong D, Shi Y, Islam MR, Liu K, Huang Y. High-Performance Phototransistors Based on MnPSe 3 and Its Hybrid Structures with Au Nanoparticles. ACS APPLIED MATERIALS & INTERFACES 2021; 13:2836-2844. [PMID: 33426871 DOI: 10.1021/acsami.0c19530] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered metal thiophosphates with a general formula MPX3 (M is a group VIIB or VIII element and X is a chalcogen) have emerged as a novel member in a two-dimensional (2D) family with fascinating physical and chemical properties. Herein, the photoelectric performance of the few-layer MnPSe3 was studied for the first time. The multilayer MnPSe3 shows p-type conductivity and its field-effect transistor delivers an ultralow dark current of about 0.1 pA. The photoswitching ratio reaches ∼103 at a wavelength of 375 nm, superior to that of other thiophosphates. A responsivity and detectivity of 392.78 mA/W and 2.19 × 109 Jones, respectively, have been demonstrated under irradiation of 375 nm laser with a power intensity of 0.1 mW/cm2. In particular, the photocurrent can be remarkably increased up to 30 times by integrating a layer of Au nanoparticle array at the bottom of the MnPSe3 layer. The metal-semiconductor interfacial electric field and the strain-induced flexoelectric polarization field caused by the underlying nanorugged Au nanoparticles are proposed to contribute together to the significant current improvement.
Collapse
Affiliation(s)
- Xu Han
- School of Science, China University of Geosciences, Beijing 100083, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Pengbo Song
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jie Xing
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Zhong Chen
- School of Mechanical and Electronic Engineering, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Danyang Li
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Guangyuan Xu
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Xiaojun Zhao
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Fangyuan Ma
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Dongke Rong
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Md Rasidul Islam
- Key laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Kong Liu
- Key laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yuan Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| |
Collapse
|
8
|
Luo Z, Jia H, Lv L, Wang Q, Yan X. Gate-tunable trion binding energy in monolayer MoS 2 with plasmonic superlattice. NANOSCALE 2020; 12:17754-17761. [PMID: 32815964 DOI: 10.1039/d0nr02104k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional transition metal dichalcogenides exhibit promising potential and attract the attention of the world in the application of optoelectronic devices owing to their distinctive physical and chemical properties. The real-time control of light-matter interactions in semiconductor devices through an external optical resonant cavity is crucial for designing next-generation optoelectronic devices. Here, we report the spectroscopic identification of trion binding energy in monolayer MoS2 field-effect transistors with plasmonic nanoresonators. In consequence, the binding energy could be regulated dynamically through an external electric field. In addition, after increasing the carrier injection, the evidence of the enhanced trion binding energy can also be observed, which can be utilized for researching magneto-plasmons. The ability to dynamically control the optical properties by electrostatic doping opens a platform for designing next-generation optoelectronic and valleytronic applications in two-dimensional crystals with accurate and precise tailored responses.
Collapse
Affiliation(s)
- Zhuang Luo
- Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices, Jiangsu University, Zhenjiang 212013, P. R. China.
| | | | | | | | | |
Collapse
|
9
|
Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
Collapse
Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
| |
Collapse
|
10
|
Devi NM, Singh NK. Plasmon-induced Ag decorated CeO 2 nanorod array for photodetector application. NANOTECHNOLOGY 2020; 31:225203. [PMID: 32167933 DOI: 10.1088/1361-6528/ab76e9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this work, glancing angle deposition (GLAD) has been used to grow Ag decorated CeO2 nanorod (NR) array on n-type Si substrate. The length of the NRs obtained was ∼235 nm and the size of the Ag NPs varied from 13 to 41 nm. The polycrystalline and crystalline nature of CeO2 and Ag respectively was revealed via selected area electron diffraction (SAED) analysis as well as x-ray diffraction (XRD) pattern. Optical absorption measurement depicts a distinct broad peak around 413 nm that is ascribed to the localized surface plasmon resonance (LSPR) effect of Ag NPs. The Ag decorated CeO2 NR device exhibited a turn on voltage at ∼3.2 V under dark, which then reduced to ∼1.3 V under 35 min illumination along with the increase in device current from 2.8 to 24.5 μA cm-2 (4 V) on continuous exposure to light. Under white light illumination, a responsivity of 4.51 A W-1 was obtained at 370 nm along with the detectivity and noise equivalent power (NEP) values of 4.15 × 1012 jones and 0.01 pW respectively. Additionally, a fast response characteristic with rise and fall times of 74 ms and 42 ms respectively was demonstrated. Thus, these findings manifest the underlying LSPR mechanism at work in Ag/CeO2 heterojunction and reveal its high potential in UV photodetector application.
Collapse
Affiliation(s)
- Ngasepam Monica Devi
- Department of Electronics and Communication Engineering, National Institute of Technology Nagaland, Dimapur, Nagaland, 797103, India
| | | |
Collapse
|
11
|
Han X, Xing J, Xu H, Huang Y, Li D, Lu J, Li P, Wu Y. Remarkable improved photoelectric performance of SnS 2 field-effect transistor with Au plasmonic nanostructures. NANOTECHNOLOGY 2020; 31:215201. [PMID: 32018240 DOI: 10.1088/1361-6528/ab72bf] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The development of photoelectric devices for high integration and miniaturization in the semiconductor industry can be pushed forward by the thriving research of two-dimensional layered metal dichalcogenides (2D-LMDs). SnS2 nanosheets have an evident photoresponse to both ultraviolet and partial visible light, but only with a fair photoelectric performance limited by their atomic-layer thickness. Here, we report a convenient and simple method to dramatically enhance the electrical and photoelectric performance of the SnS2 flake. By integrating SnS2 with Au plasmonic nanostructures, the photocurrent (I ph) increased by over 20 times. The corresponding responsivity (R), light gain (G), and detectivity (D*) have been improved by ∼2200%, 2200% and 600%, respectively. The responsivity and detectivity of the Au NPs-SnS2 field-effect transistor (FET) at 532 nm are 1125.9 A W-1 and 2.12 × 1011 Jones. Though atomically thin, the hybrid SnS2 photodetector, benefiting from local surface plasmonic resonance, achieves an excellent photoelectric performance that is not usually possible with a pristine SnS2-only device.
Collapse
Affiliation(s)
- Xu Han
- School of Science, China University of Geosciences, Beijing 100083, People's Republic of China. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | | | | | | | | | | | | | | |
Collapse
|
12
|
Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure. MATERIALS 2019; 12:ma12213639. [PMID: 31694214 PMCID: PMC6862527 DOI: 10.3390/ma12213639] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/27/2019] [Revised: 10/31/2019] [Accepted: 11/04/2019] [Indexed: 01/13/2023]
Abstract
Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10−7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.
Collapse
|
13
|
Liu B, Gutha RR, Kattel B, Alamri M, Gong M, Sadeghi SM, Chan WL, Wu JZ. Using Silver Nanoparticles-Embedded Silica Metafilms as Substrates to Enhance the Performance of Perovskite Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:32301-32309. [PMID: 31436955 DOI: 10.1021/acsami.9b10706] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Plasmonic metal nanostructures provide a promising strategy for light trapping and therefore can dramatically enhance photocurrent in optoelectronics only if the trapped light can be coupled effectively from plasmons to excitons, whereas the reverse transfer of energy, charge, and heat from excitons to plasmons can be suppressed. Motivated by this, this work develops a scheme to implement a metafilm with Ag nanoparticles (NPs) embedded in 10 nm thick silica (Ag NPs-silica metafilm) to the active device channel of a hybrid perovskite film/graphene photodetector. Remarkably, an enhancement factor of 7.45 in photoresponsivity, the highest so far among all the reports adopting plasmonic metal NPs in perovskite photodetectors, has been achieved on the photodetectors with the Ag NPs-silica metafilms. Considering that the synthesis of the Ag NPs-silica metafilms can be readily scaled up to coat both rigid and flexible substrates, this result provides a low-cost metaplatform for a variety of high-performance optoelectronic device applications.
Collapse
Affiliation(s)
- Bo Liu
- Department of Physics and Astronomy , The University of Kansas , Lawrence , Kansas 66045 , United States
| | - Rithvik R Gutha
- Department of Physics and Astronomy , The University of Alabama in Huntsville , Huntsville , Alabama 35899 , United States
| | - Bhupal Kattel
- Department of Physics and Astronomy , The University of Kansas , Lawrence , Kansas 66045 , United States
| | - Mohammed Alamri
- Department of Physics and Astronomy , The University of Kansas , Lawrence , Kansas 66045 , United States
| | - Maogang Gong
- Department of Physics and Astronomy , The University of Kansas , Lawrence , Kansas 66045 , United States
| | - Seyed M Sadeghi
- Department of Physics and Astronomy , The University of Alabama in Huntsville , Huntsville , Alabama 35899 , United States
| | - Wai-Lun Chan
- Department of Physics and Astronomy , The University of Kansas , Lawrence , Kansas 66045 , United States
| | - Judy Z Wu
- Department of Physics and Astronomy , The University of Kansas , Lawrence , Kansas 66045 , United States
| |
Collapse
|
14
|
Duan Y, Zhu Y, Li K, Wang Q, Wang P, Yu H, Yan Z, Zhao X. Cu 2O-Au nanowire field-effect phototransistor for hot carrier transfer enhanced photodetection. NANOTECHNOLOGY 2019; 30:245202. [PMID: 30865937 DOI: 10.1088/1361-6528/ab0f4d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In metal-semiconductor hybrid nanostructures, metal absorbs incident photons and generates hot carriers. The hot carriers are injected into the adjacent semiconductor and subsequently contribute to photocurrent. This process increases the conversion efficiency of optoelectronic devices and provides a new path of photodetectors. In this work, we report an enhanced photodetector by hot holes transfer, which is based on Au nanoparticles decorated p-type Cu2O nanowires. The photodetector achieves an enhanced photo-responsivity up to 0.314 A W-1, a higher detectivity of 3.7 × 1010 Jones. The response time and external quantum efficiency of the Cu2O-Au nanowires photodetector are 3.7 times faster and 18.2 times higher than that of the Cu2O nanowires, respectively. The findings indicate that Cu2O-Au nanowires would be a promising candidate in developing novel plasmonic hot carrier devices.
Collapse
Affiliation(s)
- Yongsheng Duan
- School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, People's Republic of China
| | | | | | | | | | | | | | | |
Collapse
|
15
|
Kang Z, Cheng Y, Zheng Z, Cheng F, Chen Z, Li L, Tan X, Xiong L, Zhai T, Gao Y. MoS 2-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference. NANO-MICRO LETTERS 2019; 11:34. [PMID: 34137983 PMCID: PMC7770726 DOI: 10.1007/s40820-019-0262-4] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2019] [Accepted: 03/18/2019] [Indexed: 05/02/2023]
Abstract
Self-powered devices are widely used in the detection and sensing fields. Asymmetric metal contacts provide an effective way to obtain self-powered devices. Finding two stable metallic electrode materials with large work function differences is the key to obtain highly efficient asymmetric metal contacts structures. However, common metal electrode materials have similar and high work functions, making it difficult to form an asymmetric contacts structure with a large work function difference. Herein, Mo2C crystals with low work function (3.8 eV) was obtained by chemical vapor deposition (CVD) method. The large work function difference between Mo2C and Au allowed us to synthesize an efficient Mo2C/MoS2/Au photodetector with asymmetric metal contact structure, which enables light detection without external electric power. We believe that this novel device provides a new direction for the design of miniature self-powered photodetectors. These results also highlight the great potential of ultrathin Mo2C prepared by CVD in heterojunction device applications.
Collapse
Affiliation(s)
- Zhe Kang
- Center for Nanoscale Characterization and Devices (CNCD) Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics and School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Yongfa Cheng
- Center for Nanoscale Characterization and Devices (CNCD) Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics and School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Zhi Zheng
- Center for Nanoscale Characterization and Devices (CNCD) Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics and School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Feng Cheng
- Center for Nanoscale Characterization and Devices (CNCD) Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics and School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Ziyu Chen
- Center for Nanoscale Characterization and Devices (CNCD) Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics and School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Luying Li
- Center for Nanoscale Characterization and Devices (CNCD) Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics and School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Xinyu Tan
- College of Materials and Chemical Engineering, China Three Gorges University, Daxue Road 8, Yichang, 443002, People's Republic of China.
| | - Lun Xiong
- Hubei Key Laboratory of Optical Information and Pattern Recognition, School of Optical Information and Energy Engineering, School of Mathematics and Physics, Wuhan Institute of Technology, Guanggu 1st Road 206, Wuhan, 430205, People's Republic of China
| | - Tianyou Zhai
- Center for Nanoscale Characterization and Devices (CNCD) Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics and School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Yihua Gao
- Center for Nanoscale Characterization and Devices (CNCD) Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics and School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan, 430074, People's Republic of China.
- Hubei Key Laboratory of Optical Information and Pattern Recognition, School of Optical Information and Energy Engineering, School of Mathematics and Physics, Wuhan Institute of Technology, Guanggu 1st Road 206, Wuhan, 430205, People's Republic of China.
| |
Collapse
|
16
|
Chen R, Liu W, Huang G, Wang D, Qin X, Feng W. Hydrogen sulfide sensor based on tapered fiber sandwiched between two molybdenum disulfide/citric acid composite membrane coated long-period fiber gratings. APPLIED OPTICS 2018; 57:9755-9759. [PMID: 30462006 DOI: 10.1364/ao.57.009755] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2018] [Accepted: 10/25/2018] [Indexed: 06/09/2023]
Abstract
In this work, a novel hydrogen sulfide detection scheme based on tapered fiber seeded in two long-period fiber gratings (LPGs) coated by a molybdenum disulfide/citric acid composite membrane is proposed and fabricated. The input light of a broadband source is coupled twice by passing through two LPGs with identical parameters, from which a Mach-Zehnder interferometer can be formed. The composite sensitive membrane was prepared with molybdenum disulfide and citric acid, which was coated on the surface of the two LPGs. The experimental results show that in the range of 0-70 ppm of hydrogen sulfide, with the increase of gas concentrations the interference spectra appear to blueshift. In addition, a high sensitivity of 16.65 pm/ppm, an excellent linear relationship (R2=0.97721), and high selectivity for hydrogen sulfide are achieved. The effect of temperature is also discussed. The sensor has the advantages of low cost and small volume, and can be used for detection applications at sites where hydrogen sulfide is produced, such as natural gas plants, areas of magmatic activity, coal mines, etc.
Collapse
|
17
|
Brar VW, Sherrott MC, Jariwala D. Emerging photonic architectures in two-dimensional opto-electronics. Chem Soc Rev 2018; 47:6824-6844. [DOI: 10.1039/c8cs00206a] [Citation(s) in RCA: 57] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
This review summarizes recent developments in opto-electronic device architectures comprising van der Waals two-dimensional materials for enhanced light–matter interactions.
Collapse
Affiliation(s)
| | - Michelle C. Sherrott
- Research Laboratory for Electronics
- Massachusetts Institute of Technology
- Cambridge
- USA
| | - Deep Jariwala
- Department of Electrical and Systems Engineering
- University of Pennsylvania
- Philadelphia
- USA
| |
Collapse
|