Ag nanoparticles modified large area monolayer MoS2 phototransistors with high responsivity

Broadening spectral responses and achieving environmental stability in SnS2/Ag-NPs/HfO2 flexible phototransistors

Layered two-dimensional (2D) materials have gained popularity thanks to their atomically thin physique and strong coupling with light. Here, we investigated a wide band gap (≥ 2 eV) 2D material, i.e., tin disulfide (SnS2), and decorated it with silver nanoparticles, Ag-NPs, for broadband photodetection. Our results show that the SnS2/Ag-NPs devices exhibit broadband photodetection ranging from the ultraviolet to near-infrared (250-1050 nm) spectrum with decreased rise/decay times from 8/20 s to 7/16 s under 250 nm wavelength light compared to the bare SnS2 device. This is attributed to the localized surface plasmon resonance effect and the wide band gap of SnS2 crystal. Furthermore, the HfO2-passivated SnS2/Ag-NPs devices exhibited high photodetection performance in terms of photoresponsivity (∼12 500 A W-1), and external quantum efficiency (∼6 × 106%), which are significantly higher compared to those of bare SnS2. Importantly, after HfO2 passivation, the SnS2/Ag-NPs photodetector maintained the stable performance for several weeks with merely ∼5.7% reduction in photoresponsivity. Lastly, we fabricated a flexible SnS2/Ag-NPs photodetector, which shows excellent and stable performance under various bending curvatures (0, 20, and 10 mm), as it retains ∼80% of its photoresponsivity up to 500 bending cycles. Thus, our study provides a simple route to realize broadband and stable photoactivity in flexible 2D material-based devices.

Lightwave nano-converging enhancement by an arrayed optical antenna based on metallic nano-cone-tips for CMOS imaging detection

A kind of gold-coated glass nano-cone-tips (GGNCTs) is developed as an arrayed optical antenna for highly receiving and converging incident lightwaves. A local light field enhancement factor (LFEF) of ~ 2 × 10⁴ and maximum light absorption of ~ 98% can be achieved. The near-field lightwave measurements at the wavelength of 633 nm show that the surface net charges over a single GGNCT make a typical dipole oscillation and the energy transmits along the wave vector orientation, thus leading to a strong local light field enhancement. An effective detection method by near-field coupling an arrayed GGNCT and complementary metal-oxide-semiconductor (CMOS) sensor for highly efficient imaging detection is proposed. The lightwave detection at several wavelengths, including typical 473 nm, 532 nm, 671 nm, and 980 nm, shows a notable characteristic that a better capability of the net charge distribution adjusting and localized aggregating can be obtained at the absorption peak of the GGNCT developed and a stronger signal detection achieved. The research lays a foundation for further developing a light detector with an ideal optoelectronic sensitivity and broad spectral suitability, which is based on integrating GGNCTs as an arrayed optical antenna with common sensors.

Plasmonic MXene Nanoparticle-Enabled High-Performance Two-Dimensional MoS2 Photodetectors

Two-dimensional (2D) molybdenum disulfide (MoS₂) has emerged as a prospective candidate for photodetection. However, due to the surface defects formed during the synthesis, the low photoresponse of 2D MoS₂ photodetectors restricts its practical applications. Here, we developed a hybrid plasmonic structure that integrates MXene nanoparticles (MNPs) and 2D MoS₂. With the introduction of MNPs, light waves are concentrated on MoS₂ nanosheets via a strong localized surface plasmon resonance. Consequently, MNPs-decorated MoS₂ photodetectors exhibit an improved photoresponse, including a higher responsivity (20.67 A/W), a larger detectivity of 5.39 × 10¹² Jones, and a maximum external quantum efficiency of over 5000%. A 150-fold enhanced detectivity (2.33 × 10¹² Jones) was achieved under 635 nm light illumination in the optimized device. These results provide an alternative approach for improving the photoresponse of MoS₂ photodetectors.

MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device's photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.

Fast and Low-Cost Synthesis of MoS2 Nanostructures on Paper Substrates for Near-Infrared Photodetectors

Recent advances in the production and development of two-dimensional transition metal dichalcogenides (2D TMDs) allow applications of these materials, with a structure similar to that of graphene, in a series of devices as promising technologies for optoelectronic applications. In this work, molybdenum disulfide (MoS2) nanostructures were grown directly on paper substrates through a microwave-assisted hydrothermal synthesis. The synthesized samples were subjected to morphological, structural, and optical analysis, using techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman. The variation of synthesis parameters, as temperature and synthesis time, allowed the manipulation of these nanostructures during the growth process, with alteration of the metallic (1T) and semiconductor (2H) phases. By using this synthesis method, two-dimensional MoS2 nanostructures were directly grown on paper substrates. The MoS2 nanostructures were used as the active layer, to produce low-cost near-infrared photodetectors. The set of results indicates that the interdigital MoS2 photodetector with the best characteristics (responsivity of 290 mA/W, detectivity of 1.8 × 109 Jones and external quantum efficiency of 37%) was obtained using photoactive MoS2 nanosheets synthesized at 200 °C for 120 min.

High-Performance Phototransistors Based on MnPSe3 and Its Hybrid Structures with Au Nanoparticles

Layered metal thiophosphates with a general formula MPX₃ (M is a group VIIB or VIII element and X is a chalcogen) have emerged as a novel member in a two-dimensional (2D) family with fascinating physical and chemical properties. Herein, the photoelectric performance of the few-layer MnPSe₃ was studied for the first time. The multilayer MnPSe₃ shows p-type conductivity and its field-effect transistor delivers an ultralow dark current of about 0.1 pA. The photoswitching ratio reaches ∼10³ at a wavelength of 375 nm, superior to that of other thiophosphates. A responsivity and detectivity of 392.78 mA/W and 2.19 × 10⁹ Jones, respectively, have been demonstrated under irradiation of 375 nm laser with a power intensity of 0.1 mW/cm². In particular, the photocurrent can be remarkably increased up to 30 times by integrating a layer of Au nanoparticle array at the bottom of the MnPSe₃ layer. The metal-semiconductor interfacial electric field and the strain-induced flexoelectric polarization field caused by the underlying nanorugged Au nanoparticles are proposed to contribute together to the significant current improvement.

Gate-tunable trion binding energy in monolayer MoS2 with plasmonic superlattice

Two-dimensional transition metal dichalcogenides exhibit promising potential and attract the attention of the world in the application of optoelectronic devices owing to their distinctive physical and chemical properties. The real-time control of light-matter interactions in semiconductor devices through an external optical resonant cavity is crucial for designing next-generation optoelectronic devices. Here, we report the spectroscopic identification of trion binding energy in monolayer MoS₂ field-effect transistors with plasmonic nanoresonators. In consequence, the binding energy could be regulated dynamically through an external electric field. In addition, after increasing the carrier injection, the evidence of the enhanced trion binding energy can also be observed, which can be utilized for researching magneto-plasmons. The ability to dynamically control the optical properties by electrostatic doping opens a platform for designing next-generation optoelectronic and valleytronic applications in two-dimensional crystals with accurate and precise tailored responses.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.

Plasmon-induced Ag decorated CeO2 nanorod array for photodetector application

In this work, glancing angle deposition (GLAD) has been used to grow Ag decorated CeO₂ nanorod (NR) array on n-type Si substrate. The length of the NRs obtained was ∼235 nm and the size of the Ag NPs varied from 13 to 41 nm. The polycrystalline and crystalline nature of CeO₂ and Ag respectively was revealed via selected area electron diffraction (SAED) analysis as well as x-ray diffraction (XRD) pattern. Optical absorption measurement depicts a distinct broad peak around 413 nm that is ascribed to the localized surface plasmon resonance (LSPR) effect of Ag NPs. The Ag decorated CeO₂ NR device exhibited a turn on voltage at ∼3.2 V under dark, which then reduced to ∼1.3 V under 35 min illumination along with the increase in device current from 2.8 to 24.5 μA cm^-2 (4 V) on continuous exposure to light. Under white light illumination, a responsivity of 4.51 A W^-1 was obtained at 370 nm along with the detectivity and noise equivalent power (NEP) values of 4.15 × 10¹² jones and 0.01 pW respectively. Additionally, a fast response characteristic with rise and fall times of 74 ms and 42 ms respectively was demonstrated. Thus, these findings manifest the underlying LSPR mechanism at work in Ag/CeO₂ heterojunction and reveal its high potential in UV photodetector application.

Remarkable improved photoelectric performance of SnS2 field-effect transistor with Au plasmonic nanostructures

The development of photoelectric devices for high integration and miniaturization in the semiconductor industry can be pushed forward by the thriving research of two-dimensional layered metal dichalcogenides (2D-LMDs). SnS₂ nanosheets have an evident photoresponse to both ultraviolet and partial visible light, but only with a fair photoelectric performance limited by their atomic-layer thickness. Here, we report a convenient and simple method to dramatically enhance the electrical and photoelectric performance of the SnS₂ flake. By integrating SnS₂ with Au plasmonic nanostructures, the photocurrent (I _ph) increased by over 20 times. The corresponding responsivity (R), light gain (G), and detectivity (D*) have been improved by ∼2200%, 2200% and 600%, respectively. The responsivity and detectivity of the Au NPs-SnS₂ field-effect transistor (FET) at 532 nm are 1125.9 A W^-1 and 2.12 × 10¹¹ Jones. Though atomically thin, the hybrid SnS₂ photodetector, benefiting from local surface plasmonic resonance, achieves an excellent photoelectric performance that is not usually possible with a pristine SnS₂-only device.

Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10⁻⁷ A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.

Using Silver Nanoparticles-Embedded Silica Metafilms as Substrates to Enhance the Performance of Perovskite Photodetectors

Plasmonic metal nanostructures provide a promising strategy for light trapping and therefore can dramatically enhance photocurrent in optoelectronics only if the trapped light can be coupled effectively from plasmons to excitons, whereas the reverse transfer of energy, charge, and heat from excitons to plasmons can be suppressed. Motivated by this, this work develops a scheme to implement a metafilm with Ag nanoparticles (NPs) embedded in 10 nm thick silica (Ag NPs-silica metafilm) to the active device channel of a hybrid perovskite film/graphene photodetector. Remarkably, an enhancement factor of 7.45 in photoresponsivity, the highest so far among all the reports adopting plasmonic metal NPs in perovskite photodetectors, has been achieved on the photodetectors with the Ag NPs-silica metafilms. Considering that the synthesis of the Ag NPs-silica metafilms can be readily scaled up to coat both rigid and flexible substrates, this result provides a low-cost metaplatform for a variety of high-performance optoelectronic device applications.

Cu2O-Au nanowire field-effect phototransistor for hot carrier transfer enhanced photodetection

In metal-semiconductor hybrid nanostructures, metal absorbs incident photons and generates hot carriers. The hot carriers are injected into the adjacent semiconductor and subsequently contribute to photocurrent. This process increases the conversion efficiency of optoelectronic devices and provides a new path of photodetectors. In this work, we report an enhanced photodetector by hot holes transfer, which is based on Au nanoparticles decorated p-type Cu₂O nanowires. The photodetector achieves an enhanced photo-responsivity up to 0.314 A W^-1, a higher detectivity of 3.7 × 10¹⁰ Jones. The response time and external quantum efficiency of the Cu₂O-Au nanowires photodetector are 3.7 times faster and 18.2 times higher than that of the Cu₂O nanowires, respectively. The findings indicate that Cu₂O-Au nanowires would be a promising candidate in developing novel plasmonic hot carrier devices.

MoS2-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference

Self-powered devices are widely used in the detection and sensing fields. Asymmetric metal contacts provide an effective way to obtain self-powered devices. Finding two stable metallic electrode materials with large work function differences is the key to obtain highly efficient asymmetric metal contacts structures. However, common metal electrode materials have similar and high work functions, making it difficult to form an asymmetric contacts structure with a large work function difference. Herein, Mo₂C crystals with low work function (3.8 eV) was obtained by chemical vapor deposition (CVD) method. The large work function difference between Mo₂C and Au allowed us to synthesize an efficient Mo₂C/MoS₂/Au photodetector with asymmetric metal contact structure, which enables light detection without external electric power. We believe that this novel device provides a new direction for the design of miniature self-powered photodetectors. These results also highlight the great potential of ultrathin Mo₂C prepared by CVD in heterojunction device applications.

Hydrogen sulfide sensor based on tapered fiber sandwiched between two molybdenum disulfide/citric acid composite membrane coated long-period fiber gratings

In this work, a novel hydrogen sulfide detection scheme based on tapered fiber seeded in two long-period fiber gratings (LPGs) coated by a molybdenum disulfide/citric acid composite membrane is proposed and fabricated. The input light of a broadband source is coupled twice by passing through two LPGs with identical parameters, from which a Mach-Zehnder interferometer can be formed. The composite sensitive membrane was prepared with molybdenum disulfide and citric acid, which was coated on the surface of the two LPGs. The experimental results show that in the range of 0-70 ppm of hydrogen sulfide, with the increase of gas concentrations the interference spectra appear to blueshift. In addition, a high sensitivity of 16.65 pm/ppm, an excellent linear relationship (R²=0.97721), and high selectivity for hydrogen sulfide are achieved. The effect of temperature is also discussed. The sensor has the advantages of low cost and small volume, and can be used for detection applications at sites where hydrogen sulfide is produced, such as natural gas plants, areas of magmatic activity, coal mines, etc.

Emerging photonic architectures in two-dimensional opto-electronics

This review summarizes recent developments in opto-electronic device architectures comprising van der Waals two-dimensional materials for enhanced light–matter interactions.