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Ullah S, Zhuge M, Zhang L, Fu X, Ma Y, Yang Q. Single-mode nanolasers based on FP-WGM hybrid cavity coupling. NANOTECHNOLOGY 2024; 35:205201. [PMID: 38350123 DOI: 10.1088/1361-6528/ad28d4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Accepted: 02/13/2024] [Indexed: 02/15/2024]
Abstract
As an idealized light source, semiconductor nanowire (NW) lasers have been extensively studied due to its potential applications in many fields such as optoelectronics, nanophononics, optical communication, signal processing, and displays. In this letter, we proposed a novel approach to realize a single-mode nanolaser by forming an Fabry-Perot whispering gallery mode (FP-WGM) hybrid nanocavity between two cross-contact CdS NWs, i.e.xandy-NW. In our method,x-NW supports the regular FP oscillation in the axis direction while the cross section ofy-NW provides a ultrasmall WGM nanocavity with a higherQ-factor and mode election which confirms the specific single mode can be excited. Experimentally, single-mode lasing emission centered at 517 nm was obtained with full width at half maximum of 0.08 nm and lasing threshold of ∼50 kW cm-2. The suggested designing skills projected a general strategy for lasing mode regulation and single-mode realization. The single-mode low-threshold lasing strategy in coupled NWs may open a new avenue for practical applications of NW lasers and further trigger other photonic devices at a visible range.
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Affiliation(s)
- Salman Ullah
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311215, People's Republic of China
| | - Minghua Zhuge
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, People's Republic of China
| | - Liang Zhang
- Research Center for Novel Computational Sensing and Intelligent Processing, Zhejiang Lab, Hangzhou 311100, People's Republic of China
| | - Xiang Fu
- Research Center for Novel Computational Sensing and Intelligent Processing, Zhejiang Lab, Hangzhou 311100, People's Republic of China
| | - Yaoguang Ma
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Qing Yang
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311215, People's Republic of China
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Zhao L, Liu C, Wang K. Progress of GaN-Based Optoelectronic Devices Integrated with Optical Resonances. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106757. [PMID: 35218296 DOI: 10.1002/smll.202106757] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 01/16/2022] [Indexed: 06/14/2023]
Abstract
Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanisms between optical resonances and quasiparticles, but also unveil the shield of novel optoelectronic devices with superior performances. In this review, the content covers the recent progress of GaN-based optoelectronic devices integrated with plasmonics and/or micro resonators, including the LEDs, photodetectors, solar cells, and light photocatalysis. The authors aim to provide an inspiring insight of recent remarkable progress and breakthroughs, as well as a promising prospect for the future highly-integrated, high speed, and efficient GaN-based optoelectronic devices.
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Affiliation(s)
- Lixia Zhao
- School of Electrical Engineering, Tiangong University, 399 Binshuixi Road, Tianjin, 300387, P. R. China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
| | - Chang Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
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Yu G, Li J, Zong H, Lei M, Chen H, Lang R, Li S, Akbar Khan MS, Hu X. Two-round quasi-whispering gallery mode exciton polaritons with large Rabi splitting in a GaN microrod. OPTICS EXPRESS 2021; 29:39788-39800. [PMID: 34809335 DOI: 10.1364/oe.442540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2021] [Accepted: 11/08/2021] [Indexed: 06/13/2023]
Abstract
We investigate the exciton polaritons and their corresponding optical modes in a hexagonal GaN microrod at room temperature. The dispersion curves are measured by the angle-resolved micro-photoluminescence spectrometer, and two types of exciton polaritons are identified with the help of the finite-difference time-domain simulation. By changing the pump position, the photon part of the exciton polaritons is found to switch between the quasi-whispering gallery modes and the two-round quasi-whispering gallery modes. The exciton polaritons formed by the latter are observed and distinguished for the first time, with a giant Rabi splitting as large as 2Ω = 230.3 meV.
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Ullah S, Pian S, Dai F, Wang Y, Ma Y, Yang Q. Single-Mode Semiconductor Nanowire Lasers With Coupled Cavities. Front Chem 2021; 8:631870. [PMID: 33520944 PMCID: PMC7843456 DOI: 10.3389/fchem.2020.631870] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2020] [Accepted: 12/14/2020] [Indexed: 11/13/2022] Open
Abstract
Semiconductor nanowires are one of the most fascinating topics over the past few decades. As miniaturized coherent light sources, semiconductor nanowires have been attracting tremendous attention in recent years for scientific and technological interest as potential ultra-compact, low cost, high efficiency, and low power consumption. Among different types of lasers, one-dimensional nanowires are of great interest as a promising material for next-generation nanophotonics and nanoelectronics applications due to their unique optical and electrical properties. Semiconductor nanowire lasers with single-mode output are vital in a variety of practical applications ranging from signal processing, spectroscopy, displays, optical sensing, on-chip communications, and biological studies. This article reviews the basic technology and research progress of single-mode semiconductor nanowire lasers. Afterward, the key methods and development of the different types of coupling to achieved single-mode laser output are elaborated. Finally, the challenges faced by each scheme are summarized.
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Affiliation(s)
- Salman Ullah
- State Key Laboratory of Modern Optical Instrumentation, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Sijie Pian
- State Key Laboratory of Modern Optical Instrumentation, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
| | - Fang Dai
- East China Institute of Optoelectronic Integrated Device, Suzhou, China
| | - Yilun Wang
- Institute of Navigation and Control Technology, China North Industries Group Corporation, Beijing, China
| | - Yaoguang Ma
- State Key Laboratory of Modern Optical Instrumentation, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
| | - Qing Yang
- State Key Laboratory of Modern Optical Instrumentation, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
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Mäntynen H, Anttu N, Lipsanen H. Nanowire Oligomer Waveguide Modes towards Reduced Lasing Threshold. MATERIALS 2020; 13:ma13235510. [PMID: 33287138 PMCID: PMC7731294 DOI: 10.3390/ma13235510] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Revised: 11/27/2020] [Accepted: 11/28/2020] [Indexed: 11/16/2022]
Abstract
Semiconductor nanowires offer a promising route of realizing nanolasers for the next generation of chip-scale optoelectronics and photonics applications. Established fabrication methods can produce vertical semiconductor nanowires which can themselves act both as a gain medium and as a Fabry–Pérot cavity for feedback. The lasing threshold in such nanowire lasers is affected by the modal confinement factor and end facet reflectivities, of which the substrate end reflectivity tends to be limited due to small refractive index contrast between the nanowire and substrate. These modal properties, however, also depend strongly on the modal field profiles. In this work, we use numerical simulations to investigate waveguide modes in vertical nanowire oligomers (that is, arrangements of few vertical nanowires close to each other) and their modal properties compared to single nanowire monomers. We solve for the oligomer waveguide eigenmodes which are understood as arising from interaction of monomer modes and further compute the reflectivity of these modes at the end facets of the nanowires. We consider either the nanowires or an additional coating layer as the gain medium. We show that both types of oligomers can exhibit modes with modal properties leading to reduced lasing threshold and also give directions for further research on the topic.
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Affiliation(s)
- Henrik Mäntynen
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland; (N.A.); (H.L.)
- Correspondence:
| | - Nicklas Anttu
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland; (N.A.); (H.L.)
- Physics, Faculty of Science and Engineering, Åbo Akademi University, FI-20500 Turku, Finland
| | - Harri Lipsanen
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland; (N.A.); (H.L.)
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Chun SY, Yoo GY, Jeong S, Park SM, Eo YJ, Kim W, Do YR, Song JK. Dual wavelength lasing of InGaN/GaN axial-heterostructure nanorod lasers. NANOSCALE 2019; 11:14186-14193. [PMID: 31267116 DOI: 10.1039/c9nr03906f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Optical confinement effects are investigated in InGaN/GaN axial-heterostructure nanolasers. Cylindrical nanorods with GaN/InGaN/GaN structures are prepared using combined processes of top-down and bottom-up approaches. The lasing of InGaN is observed at a low threshold (1 μJ cm-2), which is attributed to an efficient carrier transfer process from GaN to InGaN. The lasing of GaN is also found in the threshold range of 10-20 μJ cm-2 with a superlinear increase in emission intensity and high quality factors (Q = 1000), implying that dual wavelengths of lasing are tunable as a function of excitation intensity. The non-classical Fabry-Pérot modes suggest strong light-matter interactions in nanorods by optical confinement effects. The polarization of lasing indicates that the non-classical modes are in the identical transverse mode, which supports the formation of exciton-polaritons in nanorods. Polariton lasing in a single axial-heterostructure nanorod is observed for the first time, which proposes small-sized light sources with low threshold, polarized light, and tunable wavelengths in a single nanorod.
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Affiliation(s)
- So Yeon Chun
- Department of Chemistry, Kyung Hee University, Seoul 130-701, Korea.
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Yang Y, Wei T, Zhu R, Zong H, Lu J, Li J, Liao H, Yu G, Pan C, Hu X. Tunable single-mode lasing in a single semiconductor microrod. OPTICS EXPRESS 2018; 26:30021-30029. [PMID: 30469882 DOI: 10.1364/oe.26.030021] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2018] [Accepted: 09/27/2018] [Indexed: 06/09/2023]
Abstract
Developing micro/nanoscale wire lasers with single-mode operation and lasing wavelength modulation is essential for realizing their practical applications such as optical communication and saturated spectroscopy. We demonstrated, to the best of our knowledge, the first tunable single-mode microrod laser without complicated micro/nano-manipulation and without additional environmental requirement. In this letter, we realized the wavelength modulation in a single semiconductor microrod simply and directly by changing the axial location of the active region, owing that the active region position plays a key role in determining the lasing mode of microrod lasers. Based on this feature, we proposed a pair of asymmetrical distributed Bragg reflectors (DBRs) with specific spectral selectivity to be induced in a GaN microrod to realize tunable single-mode lasing in a single semiconductor microrod. By using this method, lasing wavelength can be modulated from 369.5 to 375.7 nm flexibly and repeatedly in a 45 μm GaN microrod with the change of the excitation source position. This approach demonstrates a big application potential in numerous fields consisting of optical telecommunication and environmental monitoring.
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