Giant impact of self-photothermal on light-induced ultrafast insulator-to-metal transition in VO2 nanofilms at terahertz frequency

VO2 Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

VO2, which exhibits semiconductor-metal phase transition characteristics occurring on a picosecond time scale, holds great promise for ultrafast terahertz modulation in next-generation communication. However, as of now, there is no reported prototype for an ultrafast device. The temperature effect has been proposed as one of the major obstacles. Consequently, reducing the excitation threshold for the phase transition would be highly significant. The traditional strategy typically involves chemical doping, but this approach often leads to a decrease in phase transition amplitude and a slower transition speed. In this work, we proposed a design featuring a highly conductive MXene interfacial layer between the VO2 film and the substrate. We demonstrate a significant reduction in the phase transition threshold for both temperature and laser-induced phase transition by adjusting the conductivity of the MXene layers with varying thicknesses. Our observations show that the phase transition temperature can be decreased by 9 °C, while the pump fluence for laser excitation can be reduced by as high as 36%. The ultrafast phase transition process on a picosecond scale, as revealed by the optical-pump terahertz-probe method, suggests that the MXene layers have minimal impact on the phase transition speed. Moreover, the reduced phase transition threshold can remarkably alleviate the photothermal effect and inhibit temperature rise and diffusion in VO2 triggered by laser. This study offers a blueprint for designing VO2/MXene hybrid films with reduced phase transition thresholds. It holds significant potential for the development of low-power, intelligent optical and electrical devices including, but not limited to, terahertz modulators based on phase transition phenomena.

Volatile and Nonvolatile Switching of Phase Change Material Ge2Sb2Te5 Revealed by Time-Resolved Terahertz Spectroscopy

Phase change materials exhibit unique advantages in reconfigurable photonic devices due to drastic tunability of photoelectric properties. Here, we systematically investigate the thermal equilibrium process and the ultrafast dynamics of Ge₂Sb₂Te₅ (GST) driven by femtosecond (fs) pulses, using time-resolved terahertz spectroscopy. Both fs-pulse-driven crystallization and amorphization are demonstrated, and the threshold of photoinduced crystallization (amorphization) is determined to be 8.4 mJ/cm² (10.1 mJ/cm²). The ultrafast carrier dynamics reveal that the cumulative photothermal effect plays a crucial role in the ultrafast crystallization, and modulation depth of volatile (nonvolatile) THz has switching limits up to 30% (15%). A distinctive phonon absorption at 1.1 THz is observed, providing fingerprint spectrum evidence of crystalline lattice formation driven by intense fs pulses. Finally, multistate volatile (nonvolatile) THz switching is implemented by tuning optical pump fluence. These results provide insight into the photoinduced phase change of GST and offer benefits for all optical THz functional devices.

Two-Channel VO2 Memory Meta-Device for Terahertz Waves

Vanadium oxide (VO₂), as one of the classical strongly correlated oxides with a reversible and sharp insulator-metal transition (IMT), enables many applications in dynamic terahertz (THz) wave control. Recently, due to the inherent phase transition hysteresis feature, VO₂ has shown favorable application prospects in memory-related devices once combined with metamaterials or metasurfaces. However, to date, VO₂-based memory meta-devices are usually in a single-channel read/write mode, which limits their storage capacity and speed. In this paper, we propose a reconfigurable meta-memory based on VO₂, which favors a two-channel read/write mode. Our design consists of a pair of large and small split-ring resonators, and the corresponding VO₂ patterns are embedded in the gap locations. By controlling the external power supply, the two operation bands can be controlled independently to achieve at least four amplitude states, including "00", "01", "10", and "11", which results in a two-channel storage function. In addition, our research may provide prospective applications in fields such as THz switching, photon storage, and THz communication systems in the future.

Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film

The reversible and multi-stimuli responsive insulator-metal transition of VO2, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO2 films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO2 as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO2. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO2 component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports "quasi-simultaneous" IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO2 film and VO2 hybrid metamaterials is surveyed, highlighting that VO2 can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO2-based tuneable THz devices are discussed.

Switching dynamics of silicon waveguide optical modulator driven by photothermally induced metal-insulator transition of vanadium dioxide cladding layer

We investigated the switching dynamics of optical modulators consisting of a Si waveguide with a VO₂ cladding layer by utilizing the photothermal effect, which induces a metal-insulator transition in VO₂. The devices exhibited stable optical switching with a high extinction ratio exceeding 16 dB. The switching time of the insulator-to-metal transition (heating process) ranged from tens of nanoseconds to microseconds depending on the incident light power, and that of the metal-to-insulator transition (cooling process) was several microseconds regardless of the incident light power. The heat transfer in the devices was numerically simulated to reproduce the switching characteristics and revealed that the temperature change in the first few micrometers of the VO₂/Si waveguide governed the switching time. The thermal structural design of the device is thus of key importance to improve the switching speed of the device.

Giant dual-mode graphene-based terahertz modulator enabled by Fabry-Perot assisted multiple reflection

We report a high-performance terahertz (THz) modulator with dual operation mode. For the pulse operation mode, the proposed THz modulator has the advantage of high modulation depth (MD) and can operate in a broadband frequency range. We have experimentally achieved a MD larger than 90% for the fifth-order pulse THz echo at 0.8 THz, and the MD stays larger than 75% in a broadband frequency range larger than 1 THz, whereas, for the coherent operation mode, the Fabry-Perot (F-P) interference effect has been taken into consideration and a MD larger than 75% at 0.76 THz has also been realized.