|
1
|
Zhang P, Zhang L, Lyu F, Wang D, Zhang L, Wu K, Wang S, Tang C. Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1269. [PMID: 37049362 PMCID: PMC10096760 DOI: 10.3390/nano13071269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 03/27/2023] [Accepted: 04/02/2023] [Indexed: 06/19/2023]
Abstract
In recent years, researchers have placed great importance on the use of silicon (Si)-related materials as efficient light sources for the purpose of realizing Si-based monolithic optoelectronic integration. Previous works were mostly focused on Si nanostructured materials, and, so far, exciting results from Si-based compounds are still lacking. In this paper, we have systematically demonstrated the high photoluminescence external quantum efficiency (PL EQE) and internal quantum efficiency (PL IQE) of amorphous silicon oxynitride (a-SiNxOy) systems. Within an integration sphere, we directly measured the PL EQE values of a-SiNxOy, which ranged from approximately 2% to 10% in the visible range at room temperature. Then, we calculated the related PL IQE through temperature-dependent PL measurements. The obtained PL IQE values (~84% at 480 nm emission peak wavelength) were very high compared with those of reported Si-based luminescent thin films. We also calculated the temperature-dependent PL EQE values of a-SiNxOy systems, and discussed the related PL mechanisms.
Collapse
Affiliation(s)
- Pengzhan Zhang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China
| | - Leng Zhang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China
| | - Fei Lyu
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Danbei Wang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Ling Zhang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Kongpin Wu
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Sake Wang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Chunmei Tang
- College of Science, Hohai University, Nanjing 210098, China
| |
Collapse
|
|
2
|
Zhang P, Zhang L, Wu Y, Wang S, Ge X. High photoluminescence quantum yields generated from N-Si-O bonding states in amorphous silicon oxynitride films: erratum. OPTICS EXPRESS 2022; 30:40626. [PMID: 36298992 DOI: 10.1364/oe.476755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Indexed: 06/16/2023]
Abstract
We present an erratum to our paper [Opt. Express2631617 (2018)10.1364/OE.26.031617OPEXFF1094-4087]. Due to the statistical requirements of the postdoctoral outbound assessment, the first organization of the research articles must be "Nanjing University". As all our experimental data in this article is done in the laboratory of Nanjing University, so "Nanjing University" should be used as the first organization to meet the appraisal requirements of the postdoctoral workstation.
Collapse
|
|
3
|
Fronya AA, Antonenko SV, Kharin AY, Muratov AV, Aleschenko YA, Derzhavin SI, Karpov NV, Dombrovska YI, Garmash AA, Kargin NI, Klimentov SM, Timoshenko VY, Kabashin AV. Tailoring Photoluminescence from Si-Based Nanocrystals Prepared by Pulsed Laser Ablation in He-N 2 Gas Mixtures. Molecules 2020; 25:E440. [PMID: 31973084 PMCID: PMC7037818 DOI: 10.3390/molecules25030440] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2019] [Revised: 01/14/2020] [Accepted: 01/19/2020] [Indexed: 11/16/2022] Open
Abstract
Using methods of pulsed laser ablation from a silicon target in helium (He)-nitrogen (N2) gas mixtures maintained at reduced pressures (0.5-5 Torr), we fabricated substrate-supported silicon (Si) nanocrystal-based films exhibiting a strong photoluminescence (PL) emission, which depended on the He/N2 ratio. We show that, in the case of ablation in pure He gas, Si nanocrystals exhibit PL bands centered in the "red - near infrared" (maximum at 760 nm) and "green" (centered at 550 nm) spectral regions, which can be attributed to quantum-confined excitonic states in small Si nanocrystals and to local electronic states in amorphous silicon suboxide (a-SiOx) coating, respectively, while the addition of N2 leads to the generation of an intense "green-yellow" PL band centered at 580 nm. The origin of the latter band is attributed to a radiative recombination in amorphous oxynitride (a-SiNxOy) coating of Si nanocrystals. PL transients of Si nanocrystals with SiOx and a-SiNxOy coatings demonstrate nonexponential decays in the micro- and submicrosecond time scales with rates depending on nitrogen content in the mixture. After milling by ultrasound and dispersing in water, Si nanocrystals can be used as efficient non-toxic markers for bioimaging, while the observed spectral tailoring effect makes possible an adjustment of the PL emission of such markers to a concrete bioimaging task.
Collapse
Affiliation(s)
- Anastasiya A. Fronya
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
- Lebedev Physical Institute of the Russian Acad. Sci., Leninskiy Pr. 53, 119991 Moscow, Russia;
| | - Sergey V. Antonenko
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
- MEPHI, Institute of Nanoengineering in Electronics, Spintronics and Photonics, Kashirskoe sh. 31, 115409 Moscow, Russia;
| | - Alexander Yu. Kharin
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
| | - Andrei V. Muratov
- Lebedev Physical Institute of the Russian Acad. Sci., Leninskiy Pr. 53, 119991 Moscow, Russia;
| | - Yury A. Aleschenko
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
- Lebedev Physical Institute of the Russian Acad. Sci., Leninskiy Pr. 53, 119991 Moscow, Russia;
| | - Sergey I. Derzhavin
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
- Prokhorov General Physics Institute of the Russian Acad. Sci., Vavilova St. 38, 117942 Moscow, Russia
| | - Nikita V. Karpov
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
| | - Yaroslava I. Dombrovska
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
| | - Alexander A. Garmash
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
- MEPHI, Institute of Nanoengineering in Electronics, Spintronics and Photonics, Kashirskoe sh. 31, 115409 Moscow, Russia;
| | - Nikolay I. Kargin
- MEPHI, Institute of Nanoengineering in Electronics, Spintronics and Photonics, Kashirskoe sh. 31, 115409 Moscow, Russia;
| | - Sergey M. Klimentov
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
| | - Victor Yu. Timoshenko
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
- Lebedev Physical Institute of the Russian Acad. Sci., Leninskiy Pr. 53, 119991 Moscow, Russia;
- Lomonosov Moscow State University, Physics Dep., Leninskie Gory 1, 119991 Moscow, Russia
| | - Andrei V. Kabashin
- MEPHI, Institute of Engineering Physics for Biomedicine (PhysBio), Kashirskoe sh. 31, 115409 Moscow, Russia; (A.A.F.); (S.V.A.); (A.Y.K.); (Y.A.A.); (S.I.D.); (N.V.K.); (Y.I.D.); (A.A.G.)
- Aix Marseille Univ, CNRS, LP3, Campus de Luminy, Case 917, 13288 Marseille, France
| |
Collapse
|
|
4
|
A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film. MICROMACHINES 2019; 10:mi10080552. [PMID: 31434246 PMCID: PMC6723468 DOI: 10.3390/mi10080552] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2019] [Revised: 08/13/2019] [Accepted: 08/14/2019] [Indexed: 11/16/2022]
Abstract
Silicon oxynitride (SiNxOy) is a highly promising functional material for its luminescence performance and tunable refractive index, which has wide applications in optical devices, non-volatile memory, barrier layer, and scratch-resistant coatings. This review presents recent developments, and discusses the preparation methods, performance, and applications of SiNxOy film. In particular, the preparation of SiNxOy film by chemical vapor deposition, physical vapor deposition, and oxynitridation is elaborated in details.
Collapse
|
|
5
|
González-Fernández AA, Juvert J, Aceves-Mijares M, Domínguez C. Luminescence from Si-Implanted SiO₂-Si₃N₄ Nano Bi-Layers for Electrophotonic Integrated Si Light Sources. SENSORS (BASEL, SWITZERLAND) 2019; 19:E865. [PMID: 30791460 PMCID: PMC6412257 DOI: 10.3390/s19040865] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/10/2019] [Revised: 02/11/2019] [Accepted: 02/12/2019] [Indexed: 11/17/2022]
Abstract
In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si 3 N 4 bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement⁻related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride.
Collapse
Affiliation(s)
| | - Joan Juvert
- Institut de Microelectrònica de Barcelona, CNM-CSIC, Campus UAB, 08193 Bellaterra, Spain.
| | | | - Carlos Domínguez
- Institut de Microelectrònica de Barcelona, CNM-CSIC, Campus UAB, 08193 Bellaterra, Spain.
| |
Collapse
|
|
6
|
Zhang P, Zhang L, Ge X, Wang S. Tunable Luminescent A-SiN xO y Films with High Internal Quantum Efficiency and Fast Radiative Recombination Rates. MATERIALS (BASEL, SWITZERLAND) 2018; 11:E2494. [PMID: 30544786 PMCID: PMC6316973 DOI: 10.3390/ma11122494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2018] [Revised: 12/05/2018] [Accepted: 12/06/2018] [Indexed: 11/28/2022]
Abstract
In this work, we systematically investigated the Nx bonding defects that induced high photoluminescence internal quantum efficiencies (PL IQEs) and very fast radiative recombination processes in amorphous silicon oxynitride (a-SiNxOy) systems. The luminescent N‒Si‒O bonding-related defect states were checked for the XPS, EPR, and temperature-dependent steady-state PL (TD-SSPL) properties. The PL IQEs were calculated from PL quantum yields through the principle of planar geometry optics, and then confirmed by the TD-SSPL properties. The radiative recombination rates [kr(R)] were determined by combining the PL IQE values and ns-PL lifetimes obtained from time-resolved PL measurements. Both the PL IQE, exceeding 72%, and the fast kr(R) (~10⁸ s-1) are proportional to the concentration of Nx defects, which can be explained by N‒Si‒O bonding states related to the quasi-three-level model, suggesting the possible realization of stimulated light emission in a-SiNxOy systems.
Collapse
Affiliation(s)
- Pengzhan Zhang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China.
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
| | - Leng Zhang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China.
| | - Xuefeng Ge
- Center for Analysis and Testing, Nanjing Normal University, Nanjing 210023, China.
| | - Sake Wang
- College of Science, Jinling Institute of Technology, Nanjing 211169, China.
| |
Collapse
|