Single-mode semiconductor lasers fabricated by standard photolithography for direct modulation

Single-mode InGaAsP/InP BH lasers based on high-order slotted surface gratings

A single-mode InGaAsP/InP buried heterostructure (BH) laser based on high-order slotted surface gratings has been fabricated. The introduction of surface slotted grating can simplify the fabrication process of single-mode BH lasers notably. The laser shows a good single-mode emission performance, with larger than 30 dB side-mode suppression ratio (SMSR) when the current is between 200 and 400 mA. Calculations show that the gain coupling mechanism plays a key role for the slot grating to select the emission wavelength. The linewidth of the laser is measured. The fitted Gaussian and Lorentzian linewidths are 1500 and 550 kHz, respectively.

Robust single frequency index-patterned laser design using a Fourier design method

We use a Fourier-transform based method to investigate the magnitude and robustness of mode selectivity in as-cleaved discrete-mode semiconductor lasers, where a small number of refractive index perturbations are introduced into a Fabry-Pérot laser cavity. Three exemplar index perturbation patterns are considered. Our results demonstrate the capability to significantly improve modal selectivity by choosing a perturbation distribution function that avoids placing perturbations near to the cavity centre. Our analysis also highlights the ability to select functions that can increase the yield despite facet phase errors introduced during device fabrication.

Simulation analysis of the near and far fields of an ARROW laser array with narrow slots

We studied a periodic slot-based three-core antiresonant reflecting optical waveguide laser array structure. Periodic narrow slots are used to define functional areas in the array, which directly avoids the epitaxial regrowth in the fabrication of traditional antiguide arrays. A comparative study confirmed the feasibility of the scheme. Moreover, the calculation results show that, with the increase of the width of the antiguide core, the power ratio of the main lobe in the far field increases, and the divergence angle of the main lobe and the angle between the secondary lobe and the main lobe decrease. This law provides ideas for the optimization of the array structure.

Quasi-continuous tunable semiconductor laser based on the gain-lever effect with full C-band coverage fabricated by standard lithography

A quasi-continuous tunable semiconductor laser covered full C-band is demonstrated. The quasi-continuous tuning range of the tunable semiconductor laser is significantly improved by optimizing the length of the phase section using the gain-lever effect, achieving a 36 nm range that covered the whole C-band. In the tuning range, 46 channels with 100 GHz spacing are achieved, and all channels exhibit a side mode suppression ratio above 30 dB. No regrowth or high-precision lithography is involved in the fabrication process of the tunable semiconductor laser, which has the potential to provide a cost-effective light source for dense wavelength division multiplexing systems.

Single-chip hybrid integrated silicon photonics transmitter based on passive alignment

A single-chip hybrid integrated silicon photonics transmitter based on passive alignment flip-chip bonding technology has been demonstrated. The transmitter is developed by the hybrid integration of a C-band slotted laser with 1 mm cavity length and a Mach-Zehnder modulator with 2 mm long phase shifter. A 3 dB bandwidth of the small signal response is 16.35 GHz at 5.99 V_PP superimposed with a reverse bias voltage of 2.43 V. A 25 Gbps data transmission experiment of the hybrid integrated transmitter is performed at 25°C.

Net Optical Gain Coefficients of Cu+ and Tm3+ Single-Doped and Co-Doped Germanate Glasses

Broadband tunable solid-state lasers continue to present challenges to scientists today. The gain medium is significant for realizing broadband tunable solid-state lasers. In this investigation, the optical gain performance for Tm³⁺ and Cu⁺ single-doped and co-doped germanate glasses with broadband emissions was studied via an amplified spontaneous emission (ASE) technique. It was found that the net optical gain coefficients (NOGCs) of Tm³⁺ single-doped glass were larger than those for Cu⁺ single-doped glass. When Tm³⁺ was introduced, the emission broadband width of Cu⁺-doped glass was effectively extended. Moreover, it was found that for the co-doped glass the NOGCs at the wavelengths for Tm³⁺ and Cu⁺ emissions were larger than those of Tm³⁺ and Cu⁺ single-doped glasses at the same wavelengths. In addition, the NOGC values of Tm³⁺ and Cu⁺ co-doped germanate glasses were of the same order of magnitude, and were maintained in a stable range at different wavelengths. These results indicate that the Tm³⁺ and Cu⁺ co-doped glasses studied may be a good candidate medium for broadband tunable solid-state lasers.

High-order DBR semiconductor lasers: effect of grating parameters on grating performance

In this paper, a high-order distributed Bragg reflector (DBR) semiconductor laser operating at 1064 nm is demonstrated based on simulation analysis. To get optimal Bragg grating characteristics, four parameters of the Bragg grating were analyzed in detail. Forty-nine-order Bragg gratings were designed with a reflectivity of 6% and a FWHM of 3 nm, which can realize mode selection while lasing. The Bragg gratings were designed to maximize the use of light. Transmission of the rear laser facet is theoretically 0. This simulation result provides a simple and efficient DBR semiconductor laser scheme without cavity surface coating.

Single longitudinal mode GaAs-based quantum dot laser with refractive index perturbation

We report on the design, fabrication, and characterization of single longitudinal mode InAs/GaAs quantum dot lasers emitting at the 1.3 µm communication band. The influence of simply etched surface high-order gratings in the ridge of the Fabry-Perot lasers has been studied. A 35th-order surface grating is fabricated by standard photolithography to introduce the refractive index perturbation, which leads to the reduced mirror loss at the desired wavelength and thus realizing single longitudinal mode lasing. Stable single-mode operations are maintained at the injection current range of 45-100 mA with a side-mode suppression ratio up to 33 dB.