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Kim H, Seo JW, Chung W, Narejo GM, Koo SW, Han JS, Yang J, Kim JY, In SI. Thermal Effect on Photoelectrochemical Water Splitting Toward Highly Solar to Hydrogen Efficiency. CHEMSUSCHEM 2023; 16:e202202017. [PMID: 36840941 DOI: 10.1002/cssc.202202017] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 02/07/2023] [Indexed: 06/10/2023]
Abstract
Photoelectrochemical (PEC) hydrogen production is an emerging technology that uses renewable solar light aimed to establish a sustainable carbon-neutral society. The barriers to commercialization are low efficiency and high cost. To date, researchers have focused on materials and systems. However, recent studies have been conducted to utilize thermal effects in PEC hydrogen production. This Review provides a fresh perspective to utilize the thermal effects for PEC performance enhancement while delineating the underlying principles and equations associated with efficiency. The fundamentals of the thermal effect on the PEC system are summarized from various perspectives: kinetics, thermodynamics, and empirical equations. Based on this, materials are classified as plasmonic metals, quantum dot-based semiconductors, and photothermal organic materials, which have an inherent response to photothermal irradiation. Finally, the economic viability and challenges of these strategies for PEC are explained, which can pave the way for the future progress in the field.
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Affiliation(s)
- Hwapyong Kim
- Department of Energy Science & Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988 (Republic of, Korea
| | - Joo Won Seo
- Department of Chemical Engineering, Dankook University (DKU), Yongin-si, 16890 (Republic of, Korea
| | - Wookjin Chung
- Department of Energy Science & Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988 (Republic of, Korea
| | - Ghulam Mustafa Narejo
- Department of Energy Science & Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988 (Republic of, Korea
| | - Sung Wook Koo
- Department of Energy Science & Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988 (Republic of, Korea
| | - Ji Su Han
- Department of Energy Science & Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988 (Republic of, Korea
| | - Jiwoong Yang
- Department of Energy Science & Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988 (Republic of, Korea
| | - Jae-Yup Kim
- Department of Chemical Engineering, Dankook University (DKU), Yongin-si, 16890 (Republic of, Korea
| | - Su-Il In
- Department of Energy Science & Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988 (Republic of, Korea
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Chiang SE, Chang WH, Chen YT, Li WC, Yuan CT, Shen JL, Chang SH. Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique. NANOTECHNOLOGY 2023; 34:155704. [PMID: 36657161 DOI: 10.1088/1361-6528/acb4a0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Accepted: 01/19/2023] [Indexed: 06/17/2023]
Abstract
Second harmonic generation (SHG) intensity, Raman scattering stress, photoluminescence and reflected interference pattern are used to determine the distributions of threading dislocations (TDs) and horizontal dislocations (HDs) in thec-plane GaN epitaxial layers on 6 inch Si wafer which is a structure of high electron mobility transistor (HEMT). The Raman scattering spectra show that the TD and HD result in the tensile stress and compressive stress in the GaN epitaxial layers, respectively. Besides, the SHG intensity is confirmed that to be proportional to the stress value of GaN epitaxial layers, which explains the spatial distribution of SHG intensity for the first time. It is noted that the dislocation-mediated SHG intensity mapping image of the GaN epitaxial layers on 6 inch Si wafer can be obtained within 2 h, which can be used in the optimization of high-performance GaN based HEMTs.
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Affiliation(s)
- Shou-En Chiang
- Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
- Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
| | - Wen-Hsin Chang
- Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
| | - Yu-Ting Chen
- Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
| | - Wen-Chung Li
- Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
- Wafer Works Corporation, Taoyuan 32542, Taiwan, ROC
- LEAP Semiconductor Corporation, Taoyuan 33045, Taiwan, ROC
| | - Chi-Tsu Yuan
- Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
- Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
| | - Ji-Lin Shen
- Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
- Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
| | - Sheng Hsiung Chang
- Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
- Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC
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Reddeppa M, Park BG, Majumder S, Kim YH, Oh JE, Kim SG, Kim D, Kim MD. Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods. NANOTECHNOLOGY 2020; 31:475201. [PMID: 32629439 DOI: 10.1088/1361-6528/aba301] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, III-nitride semiconductor nanostructures, especially InGaN/GaN quantum well nanorods (NRs), have been established as a promising material of choice for nanoscale optoelectronics and photoelectrochemical (PEC) water-splitting applications. Due to the large number of surface states, III-nitride NRs suffer from low quantum efficiency. Therefore, control of the surface states is necessary to improve device performance in real-time applications. In this work, we investigated the effect of hydrogen plasma treatment on the optical properties of InGaN/GaN single-quantum-well (SQW) NRs. The low-temperature photoluminescence (PL) studies revealed that yellow and green emissions overlapped and the yellow band is more dominant in the pristine InGaN/GaN SQW NRs. However, the emission corresponding to yellow luminescence was strongly suppressed and the green emission is more intensified in hydrogenated InGaN/GaN SQW NRs. Furthermore, the time-resolved PL spectroscopy studies revealed that the carrier lifetimes of hydrogenated InGaN/GaN SQW NRs are relatively short compared to the pristine InGaN/GaN SQW, indicating the effective reduction of non-radiative centers. From the PEC measurement, the photocurrent density of hydrogenated InGaN/GaN SQW NRs in the H2SO4 solution is found to be 5 mA cm-2 at -0.48 V versus reversible hydrogen electrode, which is 3.5-fold larger than that of pristine ones. These findings shed new light on the significance of surface treatment on the optical properties and thus nanostructured photoelectrodes for PEC applications.
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Affiliation(s)
- Maddaka Reddeppa
- Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
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Yang W, Prabhakar RR, Tan J, Tilley SD, Moon J. Strategies for enhancing the photocurrent, photovoltage, and stability of photoelectrodes for photoelectrochemical water splitting. Chem Soc Rev 2019; 48:4979-5015. [DOI: 10.1039/c8cs00997j] [Citation(s) in RCA: 230] [Impact Index Per Article: 46.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
In this review, we survey recent strategies for photoelectrode optimization and advanced characterization methods towards efficient water splitting cells via feedback from these characterization methods.
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Affiliation(s)
- Wooseok Yang
- Department of Materials Science and Engineering
- Yonsei University
- 03722 Seoul
- Republic of Korea
| | | | - Jeiwan Tan
- Department of Materials Science and Engineering
- Yonsei University
- 03722 Seoul
- Republic of Korea
| | - S. David Tilley
- Department of Chemistry
- University of Zurich
- 8057 Zurich
- Switzerland
| | - Jooho Moon
- Department of Materials Science and Engineering
- Yonsei University
- 03722 Seoul
- Republic of Korea
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