Direct observation of structure-assisted filament splitting during ultrafast multiple-pulse laser ablation

Single-Shot Multi-Frame Imaging of Femtosecond Laser-Induced Plasma Propagation

Single-shot ultrafast multi-frame imaging technology plays a crucial role in the observation of laser-induced plasma. However, there are many challenges in the application of laser processing, such as technology fusion and imaging stability. To provide a stable and reliable observation method, we propose an ultrafast single-shot multi-frame imaging technology based on wavelength polarization multiplexing. Through the frequency doubling and birefringence effects of the BBO and the quartz crystal, the 800 nm femtosecond laser pulse was frequency doubled to 400 nm, and a sequence of probe sub-pulses with dual-wavelength and different polarization was generated. The coaxial propagation and framing imaging of multi-frequency pulses provided stable imaging quality and clarity, as well as high temporal/spatial resolution (200 fs and 228 lp/mm). In the experiments involving femtosecond laser-induced plasma propagation, the probe sub-pulses measured their time intervals by capturing the same results. Specifically, the measured time intervals were 200 fs between the same color pulses and 1 ps between the adjacent different. Finally, based on the obtained system time resolution, we observed and revealed the evolution mechanism of femtosecond laser-induced air plasma filaments, the multifilament propagation of femtosecond laser in fused silica, and the influence mechanism of air ionization on laser-induced shock waves.

Temporal-spatial characteristics of filament induced by a femtosecond laser pulse in transparent dielectrics

The evolution mechanism of femtosecond laser-induced filaments has been widely investigated owing to its application prospects in microprocessing. However, the material dependence of the excitation, stability, and decay of filaments is not well understood despite the importance of their precise utilization. In this study, the spatiotemporal evolution of filaments induced by a single femtosecond laser pulse in sapphire and silica glass was investigated using time-resolved pump-probe shadowgraphy on femtosecond and picosecond timescales. The results revealed that the evolution was significantly different in the two typically transparent dielectrics in terms of the electronic plasma dynamics and filament lifetimes. This difference can be attributed to the self-trapped excitons (STEs) in silica glass. Furthermore, the filament dependence on pump energy and focal position was experimentally analyzed. Divergent filaments were observed when the focal position was near the surface because of the effect of the excited plasma on beam propagation. Moreover, the evolution of filament length in the two materials was discussed. This study contributes to the applications of filaments in precise processing.

One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

The third-generation semiconductors are the cornerstone of the power semiconductor leap forward and have attracted much attention because of their excellent properties and wide applications. Meanwhile, femtosecond laser processing as a convenient method further improves the performance of the related devices and expands the application prospect. In this work, an approximate 3 times improvement of the internal quantum efficiency (IQE) and a 5.5 times enhancement of the photoluminescence (PL) intensity were achieved in the GaN film prepared using a one-step femtosecond laser fabrication method. Three types of final micro/nanostructures were found with different femtosecond laser fluences, which could be attributed to the decomposition, melting, bubble nucleation, and phase explosion of GaN. The mechanisms of the microbump structure formation and enhancement of IQE were studied experimentally by the time-resolved reflection pump-probe technique, X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Simulations for the laser-GaN interaction have also been performed to ascertain the micro/nanostructure formation principle. These results promote the potential applications of femtosecond lasers on GaN and other wide band gap semiconductors, such as UV-light-emitting diodes (LEDs), photodetectors, and random lasers for use in sensing and full-field imaging.

Recent Advances in Laser-Induced Surface Damage of KH2PO4 Crystal

As a hard and brittle material, KDP crystal is easily damaged by the irradiation of laser in a laser-driven inertial confinement fusion device due to various factors, which will also affect the quality of subsequent incident laser. Thus, the mechanism of laser-induced damage is essentially helpful for increasing the laser-induced damage threshold and the value of optical crystal elements. The intrinsic damage mechanism of crystal materials under laser irradiation of different pulse duration is reviewed in detail. The process from the initiation to finalization of laser-induced damage has been divided into three stages (i.e., energy deposition, damage initiation, and damage forming) to ensure the understanding of laser-induced damage mechanism. It is clear that defects have a great impact on damage under short-pulse laser irradiation. The burst damage accounts for the majority of whole damage morphology, while the melting pit are more likely to appear under high-fluence laser. The three stages of damage are complementary and the multi-physics coupling technology needs to be fully applied to ensure the intuitive prediction of damage thresholds for various initial forms of KDP crystals. The improved laser-induced damage threshold prediction can provide support for improving the resistance of materials to various types of laser-induced damage.

Influence of ambient gases on plasma dynamics of ultrafast laser-induced filamentation in sapphires

The atmospheric influence on picosecond laser-induced filamentation in sapphires was investigated under Ar, N₂ and O₂ conditions provided by a coaxial nozzle. The spatial and temporal evolution of the whole plasma was analyzed on a nanosecond time scale by a time-resolved intensified charge-coupled device (ICCD). The regulation of the filamentation in sapphires by the atmosphere can be attributed to the modulation of the laser energy by surface ablation plasma. The thermal conductivity of the ambient gas is found to be the key factor affecting the surface plasma through a physical model. Ambient gas with higher thermal conductivity can effectively reduce the surface plasma temperature and expansion volume due to higher heat exchange efficiency. It is helpful for reducing the scattering and absorption of the laser energy. Therefore, the longest filamentary track and plasma lifetime were obtained in O₂, which has higher thermal conductivity than Ar and N₂. It is essential to understand the influence mechanism of ambient gas on filamentation, especially by providing a reliable method to regulate the filamentation induced in solid media.