Sub-wavelength grating-assisted polarization splitter-rotators for silicon-on-insulator platforms

Low loss, wideband, and high extinction ratio TM polarizer based on subwavelength gratings

We propose a low loss, wideband silicon transverse magnetic (TM) polarizer with high polarization extinction ratio and low reflection based on subwavelength grating. By arranging and optimizing a mutually perpendicular subwavelength grating with different duty cycles as the core and cladding, efficient waveguiding and radiation can be achieved for the TM and transverse electric (TE) injection, respectively. In simulation, the proposed TM polarizer has a footprint of 40µm×16.68µm, an insertion loss <0.7d B, a polarization extinction ratio ≥20d B, and an unwanted TE reflection <-17.4d B in the wavelength range of 1230-1700 nm. Moreover, the fabrication tolerance of the proposed device is also investigated.

Compact and broadband silicon polarization splitter-rotator using adiabaticity engineering

We propose and demonstrate a short and broadband silicon mode-conversion polarization splitter-rotator (PSR) consisting of a mode-conversion taper and an adiabatic coupler-based mode sorter both optimized by adiabaticity engineering (AE). AE is used to optimize the distribution of adiabaticity parameter over the length of the PSR, providing shortcut to adiabaticity at a shorter device length. The total length of the PSR is 85 µm. The design is compatible with standard silicon photonics platforms and requires only one patterning step. Fabricated PSR has a polarization cross talk of less than -20 dB over the entire O-band for the TE polarization and a polarization cross talk of less than -15 dB from 1267 to 1348 nm for the TM polarization. Overall, the PSR shows low polarization cross talk (-15 dB) over a bandwidth of 81 nm in the O-band. Cross-wafer measurements show that the PSR has good fabrication tolerance.

Multi-channel broadband nonvolatile programmable modal switch

Mode-division multiplexing (MDM) in chip-scale photonics is paramount to sustain data capacity growth and reduce power consumption. However, its scalability hinges on developing efficient and dynamic modal switches. Existing active modal switches suffer from substantial static power consumption, large footprints, and narrow bandwidth. Here, we present, for the first time, to the best of our knowledge, a novel multiport, broadband, non-volatile, and programmable modal switch designed for on-chip MDM systems. Our design leverages the unique properties of integrating nanoscale phase-change materials (PCM) within a silicon photonic architecture. This enables independent manipulation of spatial modes, allowing for dynamic, non-volatile, and selective routing to six distinct output ports. Crucially, our switch outperforms current dynamic modal switches by offering non-volatile, energy-efficient multiport functionality and excels in performance metrics. Our switch exhibits exceptional broadband operating bandwidth exceeding 70 nm, with low loss (< 1 dB), and a high extinction ratio (> 10 dB). Our framework provides a step forward in chip-scale MDM, paving the way for future green and scalable data centers and high-performance computers.

Broadband integrated polarization splitter and rotator using subwavelength grating claddings

We present a broadband integrated photonic polarization splitter and rotator (PSR) using adiabatically tapered coupled waveguides with subwavelength grating (SWG) claddings. The PSR adiabatically rotates and splits the fundamental transverse-magnetic (TM₀) input to the fundamental transverse-electric (TE₀) mode in the coupler waveguide, while passing the TE₀ input through the same waveguide. The SWGs work as an anisotropic metamaterial and facilitate modal conversions, making the PSR efficient and broadband. We rigorously present our design approaches in each section and show the SWG effect by comparing with and without the SWG claddings. The coupling coefficients in each segment explicitly show a stronger coupling effect when the SWGs are included, confirmed by the coupled-mode theory simulations. The full numerical simulation shows that the SWG-PSR operates at 1500-1750 nm (≈250 nm) wavelengths with an extinction ratio larger than 20 dB, confirmed by the experiment for the 1490-1590 nm range. The insertion losses are below 1.3 dB. Since our PSR is designed based on adiabatical mode evolution, the proposed PSR is expected to be tolerant to fabrication variations and should be broadly applicable to polarization management in photonic integrated circuits.

Broadband polarization splitter-rotator on a thin-film lithium niobate with conversion-enhanced adiabatic tapers

In this work, we propose and experimentally demonstrate a broadband polarization splitter-rotator (PSR) on the lithium niobate on insulator (LNOI). With multiple sequentially connected adiabatic tapers for waveguide mode conversion and directional coupling, the PSR shows a 160-nm bandwidth covering the C and L bands, an insertion loss of less than 2 dB, and an extinction ratio of more than 11 dB. Benefiting from the conversion-enhanced adiabatic tapers, the broadband device has a short length of 405 µm. Further optimization is performed to reduce the device length to 271 µm and comparable performances are achieved, demonstrating the feasibility of higher device compactness. The proposed design and principle can contribute to high-performance polarization management for integrated lithium niobate photonics.

Broadband ultra-compact polarization splitter-rotator using diagonally overlapped bi-layer architecture

A broadband and ultra-compact polarization splitter-rotator based on diagonally overlapped bi-layer architecture and an asymmetrical directional coupler is proposed on a silicon-on-insulator platform. By leveraging the structure over supermode theory, a 1-dB bandwidth of 220 nm, extinction ratio (ER) of <19dB, and cross talk (XT) of <-15.85dB within the span of 1400-1700 nm and coupling length of 4.62 µm are achieved. In addition, TM₀-TE₀ conversion loss of ∼0.19dB, ER of 35.88 dB, and XT of -30.46dB can be obtained at 1550 nm. The fabrication tolerances are also analyzed, indicating that the insertion losses remain below 1 dB over 1460-1620 nm in terms of width errors and layer-to-layer misalignments within ±10nm. The results show that the proposed device is very suitable to utilize between fibers and for polarization diversity of on-chip systems for broadband operation as well as ultra-compact integration.

All-silicon multi-band TM-pass polarizer on a 220 nm SOI enabled by multiplexing grating regimes

We propose an all-silicon design of a multi-band transverse-magnetic-pass (TM-pass) polarizer. The device is based on one-dimensional gratings that work under different regimes that depend on the polarization. With a tapered structure, it is revealed that the operation bandwidth can be extended by multiplexing the diffraction in O-band and the reflection in S-, C-, and L-bands for the transverse-electric (TE) mode. By simulation, we achieve a 343 nm device bandwidth with insertion loss (IL) < 0.4 dB and polarization extinction ratio (PER) > 20 dB. The operation wavelength range covers commonly-used optical telecommunication bands including the O-, S-, C-, and L- bands. Experimental results also show IL < 1.6 dB and PER > 20 dB from 1265 nm to 1360 nm corresponding to the O-band, and from 1500 nm to 1617 nm that corresponds to the C-band. The device is a single-etched design on the standard 220 nm silicon-on-insulator (SOI) with silicon oxide cladding. Such a simple and compatible design paves the way for developing practical multi-band silicon photonic integrated circuits.

Broadband and CMOS compatible polarization splitter-rotator based on a bi-level taper

A silicon-on-insulator polarization diversity scheme is proposed. Based on an asymmetrical evanescent coupler, a broadband and compact polarization splitter-rotator comprising mode conversion tapers and mode sorting asymmetric Y junctions is optimized with silicon dioxide upper cladding and a silicon nitride waveguide. The simulation results show mode conversion loss is less than 0.2 dB, and the extinction ratio is lower than -17dB in the wavelength range of 1.48µm to 1.67µm.

High-Efficiency, Dual-Band Beam Splitter Based on an All-Dielectric Quasi-Continuous Metasurface

Metasurface-based beam splitters attracted huge interest for their superior properties compared with conventional ones made of bulk materials. The previously reported designs adopted discrete metasurfaces with the limitation of a discontinuous phase profile. In this paper, we propose a dual-band beam splitter, based on an anisotropic quasi-continuous metasurface, by exploring the optical responses under x-polarized (with an electric field parallel to the direction of the phase gradient) and y-polarized incidences. The adopted metasurface consists of two identical trapezoidal silicon antenna arrays with opposite spatial variations that lead to opposite phase gradients. The operational window of the proposed beam splitter falls in the infrared and visible region, respectively, for x- and y-polarized light, resulting from the different mechanisms. When x-polarized light is incident, the conversion efficiency and total transmission of the beam splitter remains higher than 90% and 0.74 within the wavelength range from 969 nm to 1054 nm, respectively. In this condition, each array can act as a beam splitter of unequal power. For y-polarized incidence, the maximum conversion efficiency and transmission reach approximately 100% and 0.85, while the values remain higher than 90% and 0.65 in the wavelength range from 687 nm to 710 nm, respectively. In this case, each array can be viewed as an effective beam deflector. We anticipate that it can play a key role in future integrated optical devices.

Effect of Process Parameters on Mode Conversion in Submicron Tapered Silicon Ridge Waveguides

The modal property and light propagation in tapered silicon ridge waveguides with different ridge heights are investigated for a silicon on insulator (SOI) platform with a 500 nm silicon (Si) thickness. Mode conversion between the transverse magnetic (TM) fundamental and higher-order transverse electric (TE) modes occurs when light is propagated in a waveguide taper. Such a conversion is due to mode hybridization resulting from the vertical asymmetry of the cross-section in the ridge waveguides. The influence of angled sidewalls and asymmetric cladding on mode conversion is also studied. It is shown that a very long taper length (adiabatic) is required for a complete conversion to take place. Conversely, such mode conversion could be suppressed by designing a short non-adiabatic taper. Our results show that significant improvement in performance metrics can be achieved by considering process parameters’ effect on mode conversion. With an optimum selection of the etching depth and accounting asymmetries due to angled sidewalls and cladding, we demonstrate an 84.7% reduction in taper length (adiabatic) for mode conversion and a 97% efficiency TM preserving taper (ultra-short). The analysis is essential for applications such as compact polarizers, polarization splitters/rotators, and tapers for TM devices.

Ultra-compact and low-loss silicon polarization beam splitter using a particle-swarm-optimized counter-tapered coupler

In this paper, an on-chip silicon polarization beam splitter using a particle-swarm-optimized counter-tapered directional coupler is proposed, designed, and fabricated. The coupling length of the proposed device is only 5 µm. As the waveguide width variation ΔW increases from -20 to 20 nm, the simulated polarization extinction ratio larger than 18.67 dB and the corresponding insertion loss lower than 0.17 dB are achieved. Measured experimental results achieved insertion loss <0.50 dB, TE polarization extinction between 16.68 to 31.87 dB, TM polarization extinction between 17.78 to 31.13 dB, over the wavelength range 1525 to 1600 nm.

Experimental demonstration of metamaterial anisotropy engineering for broadband on-chip polarization beam splitting

Subwavelength metamaterials exhibit a strong anisotropy that can be leveraged to implement high-performance polarization handling devices in silicon-on-insulator. Whereas these devices benefit from single-etch step fabrication, many of them require small feature sizes or specialized cladding materials. The anisotropic response of subwavelength metamaterials can be further engineered by tilting its constituent elements away from the optical axis, providing an additional degree of freedom in the design. In this work, we demonstrate this feature through the design, fabrication and experimental characterization of a robust multimode interference polarization beam splitter based on tilted subwavelength gratings. A 110-nm minimum feature size and a standard silicon dioxide cladding are maintained. The resulting device exhibits insertion loss as low as 1 dB, an extinction ratio better than 13 dB in a 120-nm bandwidth, and robust tolerances to fabrication deviations.

Sub-wavelength grating-assisted polarization splitter-rotators for silicon-on-insulator platforms: erratum

An erratum is presented to correct the caption of Fig. 1 and the citation number in Fig. 7(d) in the original article [Opt. Express 27, 17581 (2019)].

Ultra-broadband polarization beam splitter with silicon subwavelength-grating waveguides

An ultra-broadband polarization beam splitter (PBS) with low excess loss (EL) and a high extinction ratio (ER) is proposed and demonstrated for the case with 340 nm thick silicon-on-insulator waveguides. Here the PBS is realized by using cascaded adiabatic dual-core tapers, which consist of a strip core and a subwavelength-grating core. For the designed PBS, which has a 33.6 µm long mode-evolution region, the ELs are ${ \lt }{0.3}\;{\rm dB}$<0.3dB, and the ERs are ${ \gt }{20}\;{\rm dB}$>20dB for both TE and TM polarizations in an ultra-broad bandwidth of ${ \gt }{270}\;{\rm nm}$>270nm (1400-1670 nm) in theory. For the fabricated PBS, the measured bandwidths for achieving ERs of ${\sim}{20}$∼20 and ${\sim}{25}\;{\rm dB}$∼25dB are 240 and 220 nm, while the 1 dB bandwidth is as large as 230 nm, which are the largest bandwidths reported to date, to the best of our knowledge.

Automated control algorithms for silicon photonic polarization receiver

We demonstrate greedy linear descent-based, basic gradient descent-based, two-point step size gradient descent-based, and two-stage optimization method-based automated control algorithms and examine their performance for use with a silicon photonic polarization receiver. With an active feedback loop control process, time-varying arbitrary polarization states from an optical fiber can be automatically adapted and stabilized to the transverse-electric (TE) mode of a single-mode silicon waveguide. Using the proposed control algorithms, we successfully realize automated adaptations for a 10 Gb/s on-off keying signal in the polarization receiver. Based on the large-signal measurement results, the control algorithms are examined and compared with regard to the iteration number and the output response. In addition, we implemented a long-duration experiment to track, adapt, and stabilize arbitrary input polarization states using the two-point step size gradient descent-based and two-stage optimization method-based control algorithms. The experimental results show that these control algorithms enable the polarization receiver to achieve real-time and continuous polarization management.

Excitation of surface plasmon polaritons in a gold nanoslab on ion-exchanged waveguide technology

Integrated metaphotonic devices has opened new horizons to control light-guiding properties at nanoscale; particularly interesting is the application of plasmonic nanostructures coupled to dielectric waveguides to reduce the inherent light propagation losses in metallic metamaterials. In this contribution, we show the feasibility of using ion-exchanged glass waveguides (IExWg) as a platform for the efficient excitation of surface plasmon polaritons (SPP). These IExWg provide high coupling efficiency and low butt-coupling with conventional dielectric optical waveguides and fibers, overcoming the hard fabrication tunability of commonly used CMOS-guiding platforms. We present a near-field scanning optical microscopy characterization of the propagation characteristics of SPP supported in a gold nanoslab fabricated on top of an IExWg. We found that the SPP can be only be excited with the fundamental TM photonic mode of the waveguide. Thanks to the low propagation loss, low birefringence, and compatibility with optical fibers, glass waveguide technology is a promising platform for the development of integrated plasmonic devices operating at visible and near infrared wavelengths with potential applications in single molecule emission routing or biosensing devices.