Third-harmonic generation in multilayer Tin Diselenide under the influence of Fabry-Perot interference effects

Triplet-Triplet Annihilation Upconverting Liposomes: Mechanistic Insights into the Role of Membranes in Two-Dimensional TTA-UC

Triplet-triplet annihilation upconversion (TTA-UC) implemented in nanoparticle assemblies is of emerging interest in biomedical applications, including in drug delivery and imaging. As it is a bimolecular process, ensuring sufficient mobility of the sensitizer and annihilator to facilitate effective collision in the nanoparticle is key. Liposomes can provide the benefits of two-dimensional confinement and condensed concentration of the sensitizer and annihilator along with superior fluidity compared to other nanoparticle assemblies. They are also biocompatible and widely applied across drug delivery modalities. However, there are relatively few liposomal TTA-UC systems reported to date, so systematic studies of the influence of the liposomal environment on TTA-UC are currently lacking. Here, we report the first example of a BODIPY-based sensitizer TTA-UC system within liposomes and use this system to study TTA-UC generation and compare the relative intensity of the anti-Stokes signal for this system as a function of liposome composition and membrane fluidity. We report for the first time on time-resolved spectroscopic studies of TTA-UC in membranes. Nanosecond transient absorption data reveal the BODIPY-perylene dyad sensitizer has a long triplet lifetime in liposome with contributions from three triplet excited states, whose lifetimes are reduced upon coinclusion of the annihilator due to triplet-triplet energy transfer, to a greater extent than in solution. This indicates triplet energy transfer between the sensitizer and the annihilator is enhanced in the membrane system. Molecular dynamics simulations of the sensitizer and annihilator TTA collision complex are modeled in the membrane and confirm the co-orientation of the pair within the membrane structure and that the persistence time of the bound complex exceeds the TTA kinetics. Modeling also reliably predicted the diffusion coefficient for the sensitizer which matches closely with the experimental values from fluorescence correlation spectroscopy. The relative intensity of the TTA-UC output across nine liposomal systems of different lipid compositions was explored to examine the influence of membrane viscosity on upconversion (UC). UC showed the highest relative intensity for the most fluidic membranes and the weakest intensity for highly viscous membrane compositions, including a phase separation membrane. Overall, our study reveals that the co-orientation of the UC pair within the membrane is crucial for effective TTA-UC within a biomembrane and that the intensity of the TTA-UC output can be tuned in liposomal nanoparticles by modifying the phase and fluidity of the liposome. These new insights will aid in the design of liposomal TTA-UC systems for biomedical applications.

Third and fifth order nonlinear susceptibilities in thin HfO2 layers

Third harmonic generation (THG) from dielectric layers is investigated. By forming a thin gradient of HfO₂ with continuously increasing thickness, we are able to study this process in detail. This technique allows us to elucidate the influence of the substrate and to quantify the layered materials third χ⁽³⁾(3ω: ω, ω, ω) and even fifth order χ⁽⁵⁾(3ω: ω, ω, ω, ω, - ω) nonlinear susceptibility at the fundamental wavelength of 1030 nm. This is to the best of our knowledge the first measurement of the fifth order nonlinear susceptibility in thin dielectric layers.

Strong, anisotropic, layer-independent second harmonic generation in multilayer SnS film

Materials based on group IV chalcogenides exhibit extensive technologically important properties. Its unusual chemical bonding and off-centering of in-layer sublattices could cause chemical polarity and weakly broken symmetry, making optical field controlling feasible. Here, we fabricated large-area SnS multilayer films and observed unexpected strong SHG response at 1030 nm. The appreciable SHG intensities were obtained with an independence on layer, which is opposite to the generation principle of overall nonzero dipole moment only in odd-layer material. Taking GaAs for reference, the second-order susceptibility was estimated to be 7.25 pm/V enhanced by mixed-chemical bonding polarity. Further polarization-dependent SHG intensity confirmed the crystalline orientation of SnS films. The results imply surface inversion symmetry broken and nonzero polarization field modified by metavalent bonding should be the origin of SHG responses. Our observations establish multilayer SnS as a promising nonlinear material, and will guide in design of IV chalcogenides with improved optics and photonics properties for the potential applications.

Third-Order Optical Nonlinearities of 2D Materials at Telecommunications Wavelengths

All-optical signal processing based on nonlinear optical devices is promising for ultrafast information processing in optical communication systems. Recent advances in two-dimensional (2D) layered materials with unique structures and distinctive properties have opened up new avenues for nonlinear optics and the fabrication of related devices with high performance. This paper reviews the recent advances in research on third-order optical nonlinearities of 2D materials, focusing on all-optical processing applications in the optical telecommunications band near 1550 nm. First, we provide an overview of the material properties of different 2D materials. Next, we review different methods for characterizing the third-order optical nonlinearities of 2D materials, including the Z-scan technique, third-harmonic generation (THG) measurement, and hybrid device characterization, together with a summary of the measured n₂ values in the telecommunications band. Finally, the current challenges and future perspectives are discussed.

Focus-engineered sub-diffraction imaging in infrared-sensitive third-order sum frequency generation microscope

We experimentally demonstrate sub-diffraction imaging in infrared-sensitive third-order sum frequency generation (TSFG) microscope using focal-field engineering technique. The TSFG interaction studied here makes use of two mid infrared photons and a single 1040 nm pump photon to generate up-converted visible photons. Focal field engineering scheme is implemented using a Toraldo-style single annular phase mask imprinted on the 1040 nm beam using a spatial light modulator. The effect of focal field engineered excitation beam on the non-resonant-TSFG process is studied by imaging isolated silicon sub-micron disks and periodic grating structures. Maximum reduction in the measured TSFG central-lobe size by ∼43% with energy in the central lobe of 35% is observed in the presence of phase mask. Maximum contrast improvement of 30% is observed for periodic grating structures. Furthermore, to validate the infrared sensitivity of the focus engineered TSFG microscope, we demonstrate imaging of amorphous Germanium-based guided-mode resonance structures, and polystyrene latex beads probed near the O-H vibrational region. We also demonstrate the utility of the focus engineered TSFG microscope for high resolution imaging of two-dimensional layered material. Focus-engineered TSFG process is a promising imaging modality that combines infrared selectivity with improved resolution and contrast, making it suitable for nanostructure and surface layer imaging.

Strong near band-edge excited second-harmonic generation from multilayer 2H Tin diselenide

We report strong second-harmonic generation (SHG) from 2H polytype of multilayer Tin diselenide (SnSe₂) for fundamental excitation close to the indirect band-edge in the absence of excitonic resonances. Comparison of SHG and Raman spectra from exfoliated SnSe₂ flakes of different polytypes shows strong (negligible) SHG and Raman E_g mode at 109 cm⁻¹ (119 cm⁻¹), consistent with 2H (1T) polytypes. The difference between the A_1g–E_g Raman peak positions is found to exhibit significant thickness dependent for the 1T form, which is found to be absent for the 2H form. The observed thickness dependence of SHG with rapid oscillations in signal strength for small changes in flake thickness are in good agreement with a nonlinear wave propagation model considering nonlinear polarization with alternating sign from each monolayer. The nonlinear optical susceptibility extracted from SHG signal comparison with standard quartz samples for 1040 nm excitation is found to be more than 4-times higher than that at 1550 nm. This enhanced nonlinear response at 1040 nm is attributed to the enhanced nonlinear optical response for fundamental excitation close to the indirect band-edge. We also study SHG from heterostructures of monolayer MoS₂/multilayer SnSe₂ which allows us to unambiguously compare the nonlinear optical response of SnSe₂ with MoS₂. We find the SHG signal and any interference effect in the overlap region to be dominated by the SnSe₂ layer for the excitation wavelengths considered. The comparison of SHG from SnSe₂ and MoS₂ underscores that the choice of the 2D material for a particular nonlinear optical application is contextual on the wavelength range of interest and its optical properties at those wavelengths. The present works further highlights the usefulness of near band-edge enhancement of nonlinear processes in emerging 2D materials towards realizing useful nanophotonic devices.

2D layered SiP as anisotropic nonlinear optical material

Two-dimensional (2D) material of silicon phosphide (SiP) has recently been shown as a promising optical material with large band gap, fast photoresponse and strong anisotropy. However, the nonlinear optical properties of 2D SiP have not been investigated yet. Here, the thickness-dependent in-plane anisotropic third-harmonic generation (THG) from the mechanically exfoliated 2D layered SiP flakes is reported. The crystal orientation of the SiP flake is determined by the angle-resolved polarized Raman spectroscopy. The angular dependence of the THG emission with respect to the incident linear polarization is found to be strongly anisotropic with the two-fold polarization dependence pattern. Furthermore, the effect of the SiP flake thickness on the THG power is analyzed.

In-plane anisotropic third-harmonic generation from germanium arsenide thin flakes

A newly introduced two-dimensional (2D) layered germanium arsenide (GeAs) has attracted growing interest due to its promising highly in-plane anisotropic crystal structure and electronic properties for photonic and optoelectronic applications. The potential of 2D layered GeAs for many applications such as anisotropic photodetection, electronics, superconductivity and thermoelectricity is being investigated in recent studies. However, the intrinsic nonlinear optical properties of 2D layered GeAs have not been explored yet. Here, thickness- and incident polarization-dependent in-plane anisotropic third-harmonic generation (THG) from the mechanically exfoliated thin GeAs flakes is reported. Furthermore, the effect of the flake thickness on the THG conversion efficiency is shown to find the optimal thickness range for high conversion efficiency. The polarization state of the emitted THG signal is also analyzed by measuring the Stokes parameters with different polarization states of the pump beam to demonstrate the capability of controlling the intensity and polarization of TH emission. Our results will create new opportunities for advancing anisotropic optical devices used for future photonic integration, optical communication and optical information processing.