Electrically injected 1.64µm emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

A reliable, efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics. Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot (QD) lasers, extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult. In this study, we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si (100) (InPOS) heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate. This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth, namely lattice and domain mismatches. Using this approach, we achieved state-of-the-art performance of the electrically-pumped, continuous-wave (CW) 1.55-µm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm-2, and output power exceeding 155 mW per facet without facet coating in CW mode. CW lasing at 120 °C and pulsed lasing at over 130 °C were achieved. This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices

Three types of GaAsP metamorphic buffer layers, including linearly graded, step graded, and metamorphic superlattices, were compared for the purposes of virtual substrates for red laser diode heterostructures. Laser diodes were fabricated on GaAs substrates and relaxed GaAsP metamorphic superlattice virtual substrates. A laser diode structure with a tensile-strained quantum well on a standard miscut GaAs substrate achieved TM-polarized emission at a 638 nm wavelength with 45% peak power conversion efficiency (PCE) at a 880 mW continuous wave (CW) output power with T0 = 77 K and T1 = 266 K. An analogous laser diode structure with a compressively strained quantum well on the metamorphic superlattice emitted TE-polarized 639 nm light with 35.5% peak PCE at 880 mW CW with T0 = 90 K and T1 = 300 K.