Fundamental electro-optic limitations of thin-film lithium niobate microring modulators

Thin-film lithium niobate electro-optic terahertz wave detector

The design, fabrication, and validation of a thin-film lithium niobate on insulator (LNOI) electro-optic (EO) time-domain terahertz (THz) wave detector is reported. LNOI offers unprecedented properties for the EO detection of freely propagating THz wave radiation pulses and transient electric fields because of the large EO coefficient of the material, engineering of the velocity matching of the THz wave and optical wave, and much reduced detector size. The proof-of-concept device is realized using thin-film lithium niobate optical waveguides forming a Mach-Zehnder interferometer with interferometer arms electrically poled in opposite directions. THz waves are coupled effectively to the fully dielectric device from free space without using antennas or plasmonics. The detection of THz waves with frequencies up to 800 GHz is successfully demonstrated. The detector allows for the detection of THz frequency electric fields up to 4.6 MV/m. The observed frequency response of the device agrees well with theoretical predictions.

Integrated microcavity electric field sensors using Pound-Drever-Hall detection

Discerning weak electric fields has important implications for cosmology, quantum technology, and identifying power system failures. Photonic integration of electric field sensors is highly desired for practical considerations and offers opportunities to improve performance by enhancing microwave and lightwave interactions. Here, we demonstrate a high-Q microcavity electric field sensor (MEFS) by leveraging the silicon chip-based thin film lithium niobate photonic integrated circuits. Using the Pound-Drever-Hall detection scheme, our MEFS achieves a detection sensitivity of 5.2 μV/(m[Formula: see text]), which surpasses previous lithium niobate electro-optical electric field sensors by nearly two orders of magnitude, and is comparable to atom-based quantum sensing approaches. Furthermore, our MEFS has a bandwidth that can be up to three orders of magnitude broader than quantum sensing approaches and measures fast electric field amplitude and phase variations in real-time. The ultra-sensitive MEFSs represent a significant step towards building electric field sensing networks and broaden the application spectrum of integrated microcavities.

χ(2) nonlinear photonics in integrated microresonators

Second-order (χ⁽²⁾) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ⁽²⁾ response due to their centrosymmetric structures. A variety of novel material platforms possessing χ⁽²⁾ nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ⁽²⁾ nonlinear effects are introduced. Afterward, we highlight the commonly used χ⁽²⁾ nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ⁽²⁾ nonlinearity in the field of integrated microcavity photonics.

Design of Suspended Slot Racetrack Microring Refractive Index Sensor Based on Polymer Nanocomposite

Recently, polymer nanocomposites have attracted great interest due to their remarkable characteristics of high performance and enabling production of low-cost devices. This article explores the reflective index sensing application of the polymer nanocomposite IOC-133, which is a TiOx/polymer nanocomposite with a reflective index between 1.8 and 1.9. Considering the material properties of high reflective index, low absorption loss, and compatibility with nanoimprint lithography, a microring-based reflective index sensor with a suspended slot waveguide structure is proposed. We combined the sensing mechanism of slot waveguides with high reflective index polymer nanocomposites and designed the suspended structure to address the problem of decreasing sensitivity caused by residual layers. The sensing device was adopted as a microring resonator, which is conducive to large-scale integration. The finite-difference time-domain (FDTD) method was employed to analyze the effects of several key parameters. The results showed that the racetrack microring sensor we propose can achieve a high sensitivity of 436 nm/RIU (Refractive Index Units), about six times higher than the microring sensor with a ridge waveguide. The Q factor of the microring reaches 1.42 × 10⁴, and the detection limit is 1.38 × 10^-4 RIU. The proposed suspended slot microring sensor has potential value in the field of nanoprinted photonic integrated circuits.

High modulation efficiency and large bandwidth thin-film lithium niobate modulator for visible light

We experimentally demonstrate an integrated visible light modulator at 532 nm on the thin-film lithium niobate platform. The waveguides on such platform feature a propagation loss of 2.2 dB/mm while a grating for fiber interface has a coupling loss of 5 dB. Our fabricated modulator demonstrates a low voltage-length product of 1.1 V·cm and a large electro-optic bandwidth with a roll-off of -1.59 dB at 25 GHz for a length of 3.3 mm. This device offers a compact and large bandwidth solution to the challenge of integrated visible wavelength modulation in lithium niobate and paves the way for future small-form-factor integrated systems at visible wavelengths.

Electrode-free photonic electric field sensor on thin film lithium niobate with high sensitivity

A high-sensitivity electrode-free photonic electric field (E-field) sensor is introduced on a thin film lithium niobate (TFLN) platform. An integrated Michelson interferometer, constructed by low-loss etched lithium niobite (LN) waveguide structures, is implemented as the sensing element. The sensing arms are designed in a spiral shape, which facilities a long interaction length with the external E-field in a small chip area. A minimal detectable E-field amplitude of 8.43 mV/m/Hz^1/2 is experimentally obtained. The metal-electrode-free design of the proposed device avoids affecting the E-field to be measured and enables a vectorial response with a measured extinction ratio (ER) of 38 dB.

Si racetrack optical modulator based on the III-V/Si hybrid MOS capacitor

We have fabricated a Si racetrack optical modulator based on a III-V/Si hybrid metal-oxide-semiconductor (MOS) capacitor. The III-V/Si hybrid MOS optical phase shifter was integrated to a Si racetrack resonator with a coupling length of 200 µm and a coupling gap of 700 nm. The fabricated Si racetrack resonator demonstrated a small VπL of 0.059 Vcm. For 10-dB optical intensity modulation, the Si racetrack resonator showed a 60% smaller driving voltage than a Mach-Zehnder interferometer modulator with the same phase shifter, leading to a better balance between high energy efficiency and large modulation bandwidth.

Ultra-efficient and fully isotropic monolithic microring modulators in a thin-film lithium niobate photonics platform

The large electro-optic coefficient, r₃₃, of thin-film lithium niobate (LN) on insulator makes it an excellent material platform for high-efficiency optical modulators. Using the fundamental transverse magnetic optical mode in Z-cut LN enables isotropic in-plane devices; however, realizing a strong vertical electric field to capitalize on r₃₃ has been challenging. Here we present a symmetric electrode configuration to boost the vertical field strength inside a fully-etched single-mode LN waveguide. We use this design paradigm to demonstrate an ultra-compact fully isotropic microring modulator with a high electro-optic tuning efficiency of 9 pm/V, extinction ratio of 20 dB, and modulation bandwidth beyond 28 GHz. Under quasi-static operation, the tuning efficiency of the modulator reaches 20 pm/V. Fast, efficient, high-contrast modulation will be critical in future optical communication systems while large quasi-static efficiency will enable post-fabrication trimming, thermal compensation, and even complete reconfiguration of microring-based sensor arrays and photonic integrated circuits.