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Han W, Dai Y, Wei D, Zhang X, Han L, Peng B, Jiao S, Weng S, Zuo P, Jiang L. Active Property-Structure Integrated Reconfiguration of Individual Resonant Nanoparticles. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2836-2846. [PMID: 38189158 DOI: 10.1021/acsami.3c12808] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Property-structure reconfigurable nanoparticles (NPs) provide additional flexibility for effectively and flexibly manipulating light at the nanoscale. This has facilitated the development of various multifunctional and high-performance nanophotonic devices. Resonant NPs based on dielectric active materials, especially phase change materials, are particularly promising for achieving reconfigurability. However, the on-demand control of the properties, especially the morphology, in individual dielectric resonant NP remains a significant challenge. In this study, we present an all-optical approach for one-step fabrication of Ge2Sb2Te5 (GST) hemispherical NPs, integrated active reversible phase-state switching, and morphology reshaping. Reversible optical switching is demonstrated, attributed to reversible phase-state changes, along with unidirectional modifications to their scattering intensity resulting from morphology reshaping. This novel technology allows the precise adjustment of each structural pixel without affecting the overall functionality of the switchable nanophotonic device. It is highly suitable for applications in single-pixel-addressable active optical devices, structural color displays, and information storage, among others.
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Affiliation(s)
- Weina Han
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing 401120, China
| | - Yuling Dai
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing 401120, China
| | - Donghui Wei
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xingyi Zhang
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing 401120, China
| | - Luna Han
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Biye Peng
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing 401120, China
| | - Shuhui Jiao
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Shayuan Weng
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing 401120, China
| | - Pei Zuo
- School of Mechanical and Electrical Engineering, Wuhan Institute of Technology, Wuhan 430073, China
| | - Lan Jiang
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing 401120, China
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Wu H, Han W, Zhang X. Ultrafast Dynamics of Different Phase States Ge 2Sb 2Te 5 Film Induced by a Femtosecond Laser Pulse Irradiation. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6760. [PMID: 36234103 PMCID: PMC9572123 DOI: 10.3390/ma15196760] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 09/18/2022] [Accepted: 09/21/2022] [Indexed: 06/16/2023]
Abstract
A femtosecond laser could realize a high transition rate of the phase change material (PCM), and the properties of the amorphous and the crystalline Ge2Sb2Te5 (GST) induced by a femtosecond laser were studied, which was one of the candidates among the PCMs. However, the characteristics of the intermediate phase states in reversible phase transitions were also important and helpful to explore the mechanisms of the phase transitions. In this paper, the ultrafast dynamics of amorphous, crystalline face-centered-cubic (FCC), and hexagonal-close-packed (HCP) states were investigated using a femtosecond laser pulse excitation through a reflective-type pump-probe technique, obtained by annealing at certain temperatures, and verified using X-ray diffraction (XRD) and the Raman spectrum. It was found that as the annealing temperature increased, the electron of the GST films could be excited more easily, while the ablation threshold decreased. Due to annealing, the structure of bonding was changed for different phase states, which resulted in the decrease in the band gap of the films. In addition, it was hard for the intermediate state films to transit to the amorphous structure state via the femtosecond laser, and the crystallization would be enhanced, while the crystalline HCP structures of GST could be directly and easily changed to the amorphous state by a pulse, which resulted from the non-thermal phase change caused by the excited electron.
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Affiliation(s)
- Hao Wu
- Laser Micro/Nano-Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing 401120, China
| | - Weina Han
- Laser Micro/Nano-Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing 401120, China
| | - Xiaobin Zhang
- Laser Micro/Nano-Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
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Guo K, Yu Q, Liu F, Deng H, Yi T, Ren B, Su W, Zhu S, Wang Z, Wu J, Zhou P. Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:378. [PMID: 35159722 PMCID: PMC8839219 DOI: 10.3390/nano12030378] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2021] [Revised: 01/04/2022] [Accepted: 01/21/2022] [Indexed: 02/04/2023]
Abstract
Gallium sulfide (GaS), with a hexagonal structure, has received extensive attention due to its graphene-like structure and derived optical properties. Here, high-quality GaS was obtained via chemical vapor synthesis and then prepared as a saturable absorber by the stamp-assisted localization-transfer technique onto fiber end face. The stability of the material and the laser damage threshold are maintained due to the optimized thickness and the cavity integration form. The potential of the GaS for nonlinear optics is explored by constructing a GaS-based Erbium-doped mode-locked fiber laser. Stable femtosecond (~448 fs) mode-locking operation of the single pulse train is achieved, and the robust mode-locked operation (>30 days) was recorded. Experimental results show the potential of GaS for multi-functional ultrafast high-power lasers and promote continuous research on graphene-like materials in nonlinear optics and photonics.
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Affiliation(s)
- Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China; (K.G.); (Q.Y.); (H.D.); (B.R.); (P.Z.)
| | - Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China; (K.G.); (Q.Y.); (H.D.); (B.R.); (P.Z.)
| | - Fangqi Liu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, College of Science, The State Key Laboratory for Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China; (F.L.); (S.Z.)
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China; (K.G.); (Q.Y.); (H.D.); (B.R.); (P.Z.)
| | - Tianan Yi
- College of Mechanical and Electrical Engineering, Hohai University, Changzhou 213022, China; (T.Y.); (W.S.)
| | - Bo Ren
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China; (K.G.); (Q.Y.); (H.D.); (B.R.); (P.Z.)
| | - Wei Su
- College of Mechanical and Electrical Engineering, Hohai University, Changzhou 213022, China; (T.Y.); (W.S.)
| | - Sicong Zhu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, College of Science, The State Key Laboratory for Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China; (F.L.); (S.Z.)
| | - Zhiqiang Wang
- Aston Institute of Photonic Technologies, Aston University, Birmingham B4 7ET, UK
- Advanced Photonic Technology Lab, College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China; (K.G.); (Q.Y.); (H.D.); (B.R.); (P.Z.)
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China; (K.G.); (Q.Y.); (H.D.); (B.R.); (P.Z.)
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