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Raman S, A RS, M S. Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review. NANOTECHNOLOGY 2023; 34:182001. [PMID: 36640446 DOI: 10.1088/1361-6528/acb320] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 01/14/2023] [Indexed: 06/17/2023]
Abstract
Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc). These nano-structures were found to improve the performance of the system in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will be helpful to researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.
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Affiliation(s)
- Srinivasan Raman
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Ravi Sankar A
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Sindhuja M
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
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Light Trapping of Inclined Si Nanowires for Efficient Inorganic/Organic Hybrid Solar Cells. NANOMATERIALS 2022; 12:nano12111821. [PMID: 35683679 PMCID: PMC9182400 DOI: 10.3390/nano12111821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/02/2022] [Revised: 05/23/2022] [Accepted: 05/23/2022] [Indexed: 12/10/2022]
Abstract
Light/matter interaction of low-dimensional silicon (Si) strongly correlated with its geometrical features, which resulted in being highly critical for the practical development of Si-based photovoltaic applications. Yet, orientation modulation together with apt control over the size and spacing of aligned Si nanowire (SiNW) arrays remained rather challenging. Here, we demonstrated that the transition of formed SiNWs with controlled diameters and spacing from the crystallographically preferred <100> to <110> orientation was realized through the facile adjustment of etchant compositions. The underlying mechanism was found to correlate with the competing reactions between the formation and removal of oxide at Ag/Si interfaces that could be readily tailored through the concentration ratio of HF to H2O2. By employing inclined SiNWs for the construction of hybrid solar cells, the improved cell performances compared with conventional vertical-SiNW-based hybrid cells were demonstrated, showing the conversion efficiency of 12.23%, approximately 1.12 times higher than that of vertical-SiNW-based hybrid solar cells. These were numerically and experimentally interpreted by the involvement of excellent light-trapping effects covering the wide-angle light illuminations of inclined SiNWs, which paved the potential design for next-generation optoelectronic devices.
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Lan J, Liu J, Hu S, Yang Y. Highly efficient light trapping of clustered silicon nanowires for solar cell applications. APPLIED OPTICS 2022; 61:369-374. [PMID: 35200871 DOI: 10.1364/ao.446163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 12/09/2021] [Indexed: 06/14/2023]
Abstract
Due to their excellent photoelectric performance, nanostructures have attracted considerable attention in research to improve the power conversion efficiency of thin-film solar cells (TFSCs). Furthermore, cylindrical silicon nanowires (Cy-SiNWs) are regarded as promising candidates for a new generation of TFSCs. On this basis, many new nanostructures derived from conventional Cy-SiNWs have been studied extensively, but most of these structures require high manufacturing accuracy because of their complex morphology. In this paper, an ingenious design of clustered silicon nanowires (Cl-SiNWs) is introduced, whose cross section is similar to the flower shape and consists of four arcs with the same radius. Hence, it requires lower manufacturing difficulty compared with nanostructures with curvature variation of the cross-section profile (i.e., elliptic shape, crescent shape, etc.). In this study, the optical and electrical characterizations are numerically investigated using the finite-difference time-domain method. The numerical simulation shows that the optimized Cl-SiNWs achieve an optical ultimate efficiency (ηul) and circuit current density (Jsc) of 33.66% and 27.54mA/cm2, respectively, with an enhancement of 7.3% over conventional Cy-SiNWs. Further, the ηul and Jsc improve to 42.20% and 34.53mA/cm2 by adding the silicon substrate and silver backreflector. More importantly, the ηul of Cl-SiNWs always obtained a higher value than Cy-SiNWs at a recommended diameter range of 360-560 nm. Therefore, the suggested Cl-SiNWs have exhibited tremendous potential for the future development of low-cost and highly efficient solar cells.
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El-Bashar R, Hussein M, Hegazy SF, Badr Y, Rahman BMA, Grattan KTV, Hameed MFO, Obayya SSA. Electrical performance of efficient quad-crescent-shaped Si nanowire solar cell. Sci Rep 2022; 12:48. [PMID: 34996926 PMCID: PMC8742021 DOI: 10.1038/s41598-021-03597-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 11/22/2021] [Indexed: 11/30/2022] Open
Abstract
The electrical characteristics of quad-crescent-shaped silicon nanowire (NW) solar cells (SCs) are numerically analyzed and as a result their performance optimized. The structure discussed consists of four crescents, forming a cavity that permits multiple light scattering with high trapping between the NWs. Additionally, new modes strongly coupled to the incident light are generated along the NWs. As a result, the optical absorption has been increased over a large portion of light wavelengths and hence the power conversion efficiency (PCE) has been improved. The electron-hole (e-h) generation rate in the design reported has been calculated using the 3D finite difference time domain method. Further, the electrical performance of the SC reported has been investigated through the finite element method, using the Lumerical charge software package. In this investigation, the axial and core-shell junctions were analyzed looking at the reported crescent and, as well, conventional NW designs. Additionally, the doping concentration and NW-junction position were studied in this design proposed, as well as the carrier-recombination-and-lifetime effects. This study has revealed that the high back surface field layer used improves the conversion efficiency by [Formula: see text] 80%. Moreover, conserving the NW radial shell as a low thickness layer can efficiently reduce the NW sidewall recombination effect. The PCE and short circuit current were determined to be equal to 18.5% and 33.8 mA[Formula: see text] for the axial junction proposed. However, the core-shell junction shows figures of 19% and 34.9 mA[Formula: see text]. The suggested crescent design offers an enhancement of 23% compared to the conventional NW, for both junctions. For a practical surface recombination velocity of [Formula: see text] cm/s, the PCE of the proposed design, in the axial junction, has been reduced to 16.6%, with a reduction of 11%. However, the core-shell junction achieves PCE of 18.7%, with a slight reduction of 1.6%. Therefore, the optoelectronic performance of the core-shell junction was marginally affected by the NW surface recombination, compared to the axial junction.
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Affiliation(s)
- Ramy El-Bashar
- National Institute of Laser Enhanced Sciences (NILES), Cairo University, Giza, 12613, Egypt
- Centre for Photonics and Smart Materials, Zewail City of Science and Technology, October Gardens, 6th of October City, 12578, Giza, Egypt
| | - Mohamed Hussein
- Centre for Photonics and Smart Materials, Zewail City of Science and Technology, October Gardens, 6th of October City, 12578, Giza, Egypt
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstrasse 13, Karlsruhe, 76131, Germany
- Department of Physics, Faculty of Science, Ain Shams University, Abbassia, 11566, Cairo, Egypt
| | - Salem F Hegazy
- National Institute of Laser Enhanced Sciences (NILES), Cairo University, Giza, 12613, Egypt
- Centre for Photonics and Smart Materials, Zewail City of Science and Technology, October Gardens, 6th of October City, 12578, Giza, Egypt
| | - Yehia Badr
- National Institute of Laser Enhanced Sciences (NILES), Cairo University, Giza, 12613, Egypt
| | - B M A Rahman
- Department of Electrical and Electronic Engineering, City, University of London, London, EC 1 V 0HB, UK
| | - Kenneth T V Grattan
- Department of Electrical and Electronic Engineering, City, University of London, London, EC 1 V 0HB, UK
| | - Mohamed Farhat O Hameed
- Centre for Photonics and Smart Materials, Zewail City of Science and Technology, October Gardens, 6th of October City, 12578, Giza, Egypt.
- Nanotechnology and Nanoelectronics Engineering Program, Zewail City of Science and Technology, October Gardens, 6th of October City, 12578, Giza, Egypt.
- Mathematics and Engineering Physics Department, Faculty of Engineering, University of Mansoura, Mansoura, 35516, Egypt.
| | - Salah S A Obayya
- Centre for Photonics and Smart Materials, Zewail City of Science and Technology, October Gardens, 6th of October City, 12578, Giza, Egypt.
- Department of Electronics and Communication Engineering, Faculty of Engineering, University of Mansoura, Mansoura, 35516, Egypt.
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Zhang X, Yang L, Wang F, Cheng Z, Liang H. Wrinkled surface microstructure for enhancing the infrared spectral performance of radiative cooling. OPTICS EXPRESS 2021; 29:11416-11432. [PMID: 33984921 DOI: 10.1364/oe.418650] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2021] [Accepted: 03/17/2021] [Indexed: 06/12/2023]
Abstract
Radiative cooling is a passive cooling method that does not consume additional energy and has broad application prospects. In recent studies, the surface microstructure was found to have a significant influence on improving the emissivity in infrared spectra for radiative cooling. Accordingly, in this paper, an innovative wrinkled surface microstructure without any periodicity is proposed for enhancing the infrared spectral performance of radiative cooling. The effects of the height and number of wrinkles as well as the radius and volume fraction of particles on the infrared spectral performance of radiative cooling are investigated. The radiative cooling performances of the plane, pyramid, moth-eye, and wrinkled microstructures are comparatively investigated using the finite-difference time-domain (FDTD) method. The results show that the mean emissivity of innovative radiative cooling films with the wrinkled surface microstructure reaches 99.58% in the "atmospheric window" wavelength range. The mean emissivity of the wrinkled microstructure is improved by 19%, 22.16%, and 8.41% over those of the plane, pyramid, and moth-eye microstructures, respectively. This indicates that the wrinkled microstructure exhibits a better performance for radiative cooling than single periodic surface microstructures. Furthermore, the wrinkled microstructure has no periodicity so it has low production cost, which makes it possible to replace other periodic surface microstructures.
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