Pulse-duration dependence of laser-induced modifications inside silicon

Method for producing identical spectral copies of ultra-broadband arbitrary light fields

An ultra-broadband beam splitter arrangement, with a spectral amplitude response that is over seven orders-of-magnitude more uniform than broadband, multi-layer dielectric beam splitters, can be created by the combination of multiple Fresnel events on an uncoated, optical flat when used at a specific angle-of-incidence. This beam splitter arrangement produces three, spectral copies of the original, two of which have identical spectral phase. In this manuscript we derive the precise angle at which this maximally flat spectral amplitude response occurs for any material and present this angle's material and polarization dependence.

Polarization-based idler elimination: enhancing the efficiency of optical parametric amplification

This study presents a novel way to increase the energy conversion efficiency of optical parametric amplification by eliminating the idler wave from the interaction using consecutive type-I and type-II amplification processes. By using the aforementioned straightforward approach the wavelength tunable narrow-bandwidth amplification with exceptionally high 40% peak pump-to-signal conversion efficiency and 68% peak pump depletion was achieved in the short-pulse regime, while preserving the beam quality factor of less than 1.4. The same optical layout can also serve as an enhanced idler amplification scheme.

Internal structuring of gallium arsenide using short laser pulses

Laser writing inside semiconductors attracts attention as a possible route for three-dimensional integration in advanced micro technologies. In this context, gallium arsenide (GaAs) is a material for which the best conditions for laser internal modification (LIM) have not been established yet. We address this question by using laser pulses at a fixed wavelength of 1550-nm. A large parameter space is investigated including the response to the applied pulse energy, pulse duration (from femtosecond to nanosecond) and the focusing conditions. We report that well-defined and reproducible internal modifications are achievable with tightly focused nanosecond pulses. The measured writing thresholds are systematically compared to those obtained in silicon (Si), a more extensively studied material. In comparison to Si, we also observe that GaAs is more prone to filamentation effects affecting the modification responses. The reported specific observations for LIM of GaAs should facilitate the future process developments for applications in electronics or photonics.

Pulse temporal scaling of LIDT for anti-reflective coatings deposited on lithium triborate crystals

Anti-reflective (AR) coatings minimize photon losses of optics when it comes to the transmission of light, thus, are broadly used for imaging and laser applications. However, the maximum output power in high-power lasers is limited by the so-called laser-induced damage threshold (LIDT) parameter of optical elements. Often AR coated nonlinear crystals are responsible for such limitations, however, LIDT data is rather scarce. Thus, only limited understanding about LIDT pulse temporal scaling laws for AR coatings exists, which also lacks the specificity about fatigue effect of distinct failure modes. To expand the present knowledge four identical lithium triborate (LBO) crystals were prepared. Each crystal had one side coated with the AR@1064+532 nm coating and the opposite side coated with the AR@355 nm coating. Multiple LIDT tests were then conducted following 1-on-1 and S-on-1 testing protocols at UV and IR wavelengths while varying laser pulse duration. Empirical scaling laws are then investigated for different failure modes and later interpreted using a numerical model.

Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers

With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and unnecessary thermal damage. In this work, a precision layered stealth dicing (PLSD) method by ultrafast lasers is proposed to separate the semi-insulated 4H-SiC wafer with a thickness of 508 μm. The laser power attenuates linearly from 100% to 62% in a gradient of 2% layer by layer from the bottom to the top of the wafer. A cross section with a roughness of about 1 μm was successfully achieved. We have analyzed the effects of laser pulse energy, pulse width, and crystal orientation of the SiC wafer. The anisotropy of the SiC wafer results in various qualities of PLSD cross sections, with the roughness of the crystal plane {10−10} being 20% lower than that of the crystal plane {11−20}.

Study on the polarization dependence of nonlinear absorption of ultrafast laser pulses in bulk fused silica

By studying the nonlinear absorption of ultrafast laser pulses in fused silica, we examine, both with experiments and numerical simulations, the different polarization dependence of multiphoton ionization and avalanche ionization. Results show multiphoton ionization and avalanche ionization play different roles in femtosecond and picosecond laser micromachining, and the contribution via avalanche ionization increases with pulse duration. Meanwhile, the spatial distribution of the free carriers generated by circularly polarized pulses is more concentrated than those generated by linear polarization for picosecond laser pulses. These properties make the circular polarized ultrafast laser a possible way to improve the ultrafast laser micromachining efficiency and spatial quality, and can help to reduce some problematic nonlinear effects in ultrafast laser micromachining of low energy band materials.

Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength

Using focused subnanosecond laser pulses at [Formula: see text] wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside [Formula: see text]-thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.