Ultranarrow-bandwidth planar hot electron photodetector based on coupled dual Tamm plasmons

Tamm plasmon polariton-based planar hot-electron photodetector for the near-infrared region

Light-trapping devices have always been a topic of intense interest among researchers. One such device that has gained attention is the hot-electron photodetector with a tunable detection wavelength. Photodetectors based on plasmon nanostructures that provide excitation of surface plasmon polaritons are challenging to manufacture. To address this issue, a planar hot-electron photodetector based on a Tamm plasmon polariton localized in a metal-semiconductor-multilayer mirror structure has been proposed in this study. The parameters and materials of the structure were adjusted to ensure perfect absorption at the resonance wavelength. As a result, the photoresponsivity of the proposed device can reach 42.6 mA W-1 at 905 nm. For the first time, the photosensitivity was calculated analytically by solving the dispersion law for the Tamm plasmon polariton.

Grating-assisted hot-electron photodetectors for S- and C-band telecommunication

Although outstanding detectivities, InGaAs photodetectors for optic fiber communication are often costly due to the need for cooling. Therefore, cryogen-free and cost-effective alternatives working in telecommunication bands are highly desired. Here, we present a design of hot-electron photodetectors (HE PDs) with attributes of room-temperature operation and strong optical absorption over S and C bands (from 1460 to 1565 nm). The designed HE PD consists of a metal-semiconductor-metal hot-electron stack integrated with a front grating. Optical simulations reveal that mode hybridizations between Fabry-Pérot resonance and grating-induced surface plasmon excitation lead to high absorption efficiencies (≥0.9) covering S and C bands. Probability-based electrical calculations clarify that device responsivity is mainly determined by working wavelength on the premise of broadband strong absorption. Moreover, through comparison studies between the grating-assisted HE PD and purely planar microcavity system that serves as a reference, we highlight the design superiorities in average absorption and average responsivity with optimized values of 0.97 and 0.73 mA W-1, respectively. The upgraded peformances of the designed device are promising for efficient photoelectric conversion in optic fiber communication systems.

Planar hot-electron photodetection with polarity-switchable photocurrents controlled by the working wavelength

Hot-electron photodetection is attracting increasing interests. Based on internal photoemission mechanism, hot-electron photodetectors (HE PDs) convert incident photon energy into measurable photocurrent. To obtain polarity-switchable photocurrent, one often applies electric bias to reverse the hot-electron flow. However, the employment of bias reduces the device flexibility and increasing the bias voltage degrades the detectivity of the device. Herein, we design a planar HE PD with the polarity-switchable photocurrent controlled by the working wavelength. Optical simulations show that the device exhibits two absorption peaks due to the resonances of two Tamm plasmons (TPs). Electrical calculations predict two corresponding TP-assisted responsivity peaks, but with opposite photocurrent polarities, which are determined by the hot-electron flows with opposite directions. We find that the hot-electron flows are closely related with the population differences of TP-induced hot electrons in two electrodes. We further demonstrate that the photocurrent polarity of the HE PD can be switched by altering working wavelength from one TP wavelength to the other. We believe that this approach paves a route to achieve flexible hot-electron photodetection for extensive applications.

Advances in the Field of Two-Dimensional Crystal-Based Photodetectors

Two-dimensional (2D) materials have sparked intense interest among the scientific community owing to their extraordinary mechanical, optical, electronic, and thermal properties. In particular, the outstanding electronic and optical properties of 2D materials make them show great application potential in high-performance photodetectors (PDs), which can be applied in many fields such as high-frequency communication, novel biomedical imaging, national security, and so on. Here, the recent research progress of PDs based on 2D materials including graphene, transition metal carbides, transition-metal dichalcogenides, black phosphorus, and hexagonal boron nitride is comprehensively and systematically reviewed. First, the primary detection mechanism of 2D material-based PDs is introduced. Second, the structure and optical properties of 2D materials, as well as their applications in PDs, are heavily discussed. Finally, the opportunities and challenges of 2D material-based PDs are summarized and prospected. This review will provide a reference for the further application of 2D crystal-based PDs.

Flexible Metamaterial Quarter-Wave Plate and Its Application in Blocking the Backward Reflection of Terahertz Waves

A terahertz flexible metamaterial quarter-wave plate (QWP) is designed and fabricated using polyimide as the substrate in this paper, with a 3 dB axial ratio bandwidth of 0.51 THz and high polarization conversion efficiency and transmittance. The effect of the incidence angle on the polarization conversion performance of the QWP is discussed by measuring the transmissions at multiple incidence angles. The blocking effect of this QWP combined with a polarizer on the backward reflection of terahertz waves is investigated by terahertz time-domain spectral transmission experiments. By adjusting the angle of the QWP and polarizer with respect to the incident light in the optical path, a blocking efficiency of 20 dB can be achieved at a 20° incidence angle, with a bandwidth of 0.25 THz, a maximum blocking efficiency of 58 dB at 1.73 THz, and an insertion loss of only 1.4 dB. Flexible terahertz metamaterial QWPs and polarizers can effectively block harmful reflected waves in terahertz communication and other systems. They have the advantages of a simple structure, ultra-thinness and flexibility, easy integration, no external magnetic field, and no low-temperature and other environmental requirements, thus having broad application prospects for terahertz on-chip integrated systems.

Five-layer planar hot-electron photodetectors at telecommunication wavelength of 1550 nm

Cost-effective and high-responsivity photodetectors at a telecommunication wavelength of 1550 nm are highly desired in optical communication systems. Differing from conventional semiconductor-based photodetectors, several planar hot-electron photodetectors (HE PDs) that operate at 1550 nm have been reported. However, these devices were often comprised of many planar layers and exhibited relatively low responsivities. Herein, we propose a design of high-performance planar HE PDs consisting of five layers. Utilizing Fabry-Pérot (FP) resonance, the nearly perfect absorption of the proposed device can be achieved at the targeted wavelength of 1550 nm. Simulation results show that FP resonance orders are crucial for the optical absorption efficiencies, and then electrical responses. Analytical electrical calculations reveal that, benefiting from the strong absorption (>0.6) in the ultrathin Au layer with a thickness of 5 nm and the low Schottky barrier (0.5 eV) of Au-MoS₂ contact, predicted responsivity of proposed HE PD at zero-order FP resonance is up to ∼10 mA/W. Our design provides a new approach to realize low-cost and efficient photodetection for optical communication technology.

Broadband Tamm Plasmons in Chirped Photonic Crystals for Light-Induced Water Splitting

An electrode of a light-induced cell for water splitting based on a broadband Tamm plasmon polariton localized at the interface between a thin TiN layer and a chirped photonic crystal has been developed. To facilitate the injection of hot electrons from the metal layer by decreasing the Schottky barrier, a thin n-Si film is embedded between the metal layer and multilayer mirror. The chipping of a multilayer mirror provides a large band gap and, as a result, leads to an increase in the integral absorption from 52 to 60 percent in the wavelength range from 700 to 1400 nm. It was shown that the photoresponsivity of the device is 32.1 mA/W, and solar to hydrogen efficiency is 3.95%.