Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform

Giant Superlinear Power Dependence of Photocurrent Based on Layered Ta2 NiS5 Photodetector

Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power-dependent photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. This work reports the giant superlinear power dependence of photocurrent based on multilayer Ta₂ NiS₅ . While the fabricated photodetector exhibits good sensitivity (3.1 mS W^-1 per □) and fast photoresponse (31 µs), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from 1.5 to 200 µW µm^-2 , the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, prominent superlinearity is observed with a giant power exponent of γ = 1.5. The unusual photoresponse can be explained by a two-recombination-center model where density of states of the recombination centers (RC) effectively closes all recombination channels. The photodetector is integrated into camera for taking photos with enhanced contrast due to superlinearity. This work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.

Recent Advances in Materials and Flexible Sensors for Arrhythmia Detection

Arrhythmias are one of the leading causes of death in the United States, and their early detection is essential for patient wellness. However, traditional arrhythmia diagnosis by expert evaluation from intermittent clinical examinations is time-consuming and often lacks quantitative data. Modern wearable sensors and machine learning algorithms have attempted to alleviate this problem by providing continuous monitoring and real-time arrhythmia detection. However, current devices are still largely limited by the fundamental mismatch between skin and sensor, giving way to motion artifacts. Additionally, the desirable qualities of flexibility, robustness, breathability, adhesiveness, stretchability, and durability cannot all be met at once. Flexible sensors have improved upon the current clinical arrhythmia detection methods by following the topography of skin and reducing the natural interface mismatch between cardiac monitoring sensors and human skin. Flexible bioelectric, optoelectronic, ultrasonic, and mechanoelectrical sensors have been demonstrated to provide essential information about heart-rate variability, which is crucial in detecting and classifying arrhythmias. In this review, we analyze the current trends in flexible wearable sensors for cardiac monitoring and the efficacy of these devices for arrhythmia detection.

Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off

We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm GaAs buffer layer was first grown on Si as a virtual substrate, and a threading dislocation density of 1.8 × 107 cm−2 was achieved via two In0.1Ga0.9As strained insertion layers and 6× thermal cycle annealing. An inverted p-on-n GaAs solar cell structure grown on the GaAs/Si virtual substrate showed homogenous photoluminescence peak intensities throughout the 2″ wafer. We show a 10.6% efficient GaAs thin film solar cell without anti-reflection coatings and compare it to nominally identical upright structure solar cells grown on GaAs and Si. This work paves the way for large-scale and low-cost wafer-bonded III-V multi-junction solar cells.

High-Performance Flexible InAs Thin-Film Photodetector Arrays with Heteroepitaxial Growth Using an Abruptly Graded InxAl1-xAs Buffer

Current infrared thermal image sensors are mainly based on planar firm substrates, but the rigid form factor appears to restrain the versatility of their applications. For wearable health monitoring and implanted biomedical sensing, transfer of active device layers onto a flexible substrate is required while controlling the high-quality crystalline interface. Here, we demonstrate high-detectivity flexible InAs thin-film mid-infrared photodetector arrays through high-yield wafer bonding and a heteroepitaxial lift-off process. An abruptly graded In_xAl_1-xAs (0.5 < x < 1) buffer was found to drastically improve the lift-off interface morphology and reduce the threading dislocation density twice, compared to the conventional linear grading method. Also, our flexible InAs photodetectors showed excellent optical performance with high mechanical robustness, a peak room-temperature specific detectivity of 1.21 × 10⁹ cm-Hz^1/2/W at 3.4 μm, and excellent device reliability. This flexible InAs photodetector enabled by the heteroepitaxial lift-off method shows promise for next-generation thermal image sensors.

WSe2crystals on paper: flexible, large area and broadband photodetectors

The paper-based photodetector has recently captivated a great deal of attention in various opto-electronics applications because of facile, cost effective and green synthesis. Two-dimensional transition metal dichalcogenides materials are promising for photodetection under the broad spectral range. In this work, we have fabricated paper-based device by rubbing the tungsten di-selenide (WSe₂) crystals on paper substrate. Low-cost, facile and green synthesis technique was employed to make a high-performance paper-based WSe₂photodetector. Paper-based photodetector was fabricated via non-toxic simply rubbing process of WSe₂nanosheets on low-cost bio-degradable paper. The photodetector shows good responsivity of 72.5 μA W^-1and detectivity at around 2.4 × 10⁷Jones at very low bias (1.0 V) at wavelength of 780 nm, respectively. Due to good photo-absorption strength, photodetector exhibits excellent photo-response over wide wavelength range from visible to near infrared. This device also shows very good flexibility with a stable photo-response. This device shows a general and reliable study for the design of photodetectors that is eco-friendly and cost-effective. Overall studied results of the fabricated device indicate that they have the ability to be used in large-scale preparation of the device.