Geometric control over surface plasmon polariton out-coupling pathways in metal-insulator-metal tunnel junctions

Light-Emitting Plasmonic Tunneling Junctions: Current Status and Perspectives

Quantum tunneling, in which electrons can tunnel through a finite potential barrier while simultaneously interacting with other matter excitation, is one of the most fascinating phenomena without classical correspondence. In an extremely thin metallic nanogap, the deep-subwavelength-confined plasmon modes can be directly excited by the inelastically tunneling electrons driven by an externally applied voltage. Light emission via inelastic tunneling possesses a great potential application for next-generation light sources, with great superiority of ultracompact integration, large bandwidth, and ultrafast response. In this Perspective, we first briefly introduce the mechanism of plasmon generation in the inelastic electron tunneling process. Then the state of the art in plasmonic tunneling junctions will be reviewed, particularly emphasizing efficiency improvement, precise construction, active control, and electrically driven optical antenna integration. Ultimately, we forecast some promising and critical prospects that require further investigation.

Engineering the Outcoupling Pathways in Plasmonic Tunnel Junctions via Photonic Mode Dispersion for Low-Loss Waveguiding

Outcoupling of plasmonic modes excited by inelastic electron tunneling (IET) across plasmonic tunnel junctions (TJs) has attracted significant attention due to low operating voltages and fast excitation rates. Achieving selectivity among various outcoupling channels, however, remains a challenging task. Employing nanoscale antennas to enhance the local density of optical states (LDOS) associated with specific outcoupling channels partially addressed the problem, along with the integration of conducting 2D materials into TJs, improving the outcoupling to guided modes with particular momentum. The disadvantage of such methods is that they often involve complex fabrication steps and lack fine-tuning options. Here, we propose an alternative approach by modifying the dielectric medium surrounding TJs. By employing a simple multilayer substrate with a specific permittivity combination for the TJs under study, we show that it is possible to optimize mode selectivity in outcoupling to a plasmonic or a photonic-like mode characterized by distinct cutoff behaviors and propagation length. Theoretical and experimental results obtained with a SiO2-SiN-glass multilayer substrate demonstrate high relative coupling efficiencies of (62.77 ± 1.74)% and (29.07 ± 0.72)% for plasmonic and photonic-like modes, respectively. The figure-of-merit, which quantifies the tradeoff between mode outcoupling and propagation lengths (tens of μm) for both modes, can reach values as high as 180 and 140. The demonstrated approach allows LDOS engineering and customized TJ device performance, which are seamlessly integrated with standard thin film fabrication protocols. Our experimental device is well-suited for integration with silicon nitride photonics platforms.

Pressure and temperature dual-parameter optical sensor based on the MIM waveguide structure coupled with two T-shaped cavities

This paper elaborates on the design and simulation of a multifunctional optical sensor that features simultaneous detection of pressure and temperature, which is based on the metal-insulator-metal waveguide structure with two T-shaped resonant cavities. Depending on the simulation findings, pressure and temperature can be measured separately by two T-shaped cavities at different Fano resonance wavelengths. As the pressure applied to the upper T-shaped cavity increases, the resonance wavelength first shifts linearly due to the slight deformation of the cavity, and the maximum pressure sensitivity reaches 12.48 nm/MPa. After the pressure exceeds a threshold, the relationship between pressure and resonance wavelength transforms into a quadratic polynomial. In the lower T-shaped cavity, solid polydimethylsiloxane is sealed as a thermal-sensitive material, effectively preventing material overflow brought on by structural micro-vibration under pressure, and its high thermo-optical coefficient prompts a temperature sensitivity of 0.36 nm/°C. Furthermore, by optimizing the choice of Fano resonances, pressure and temperature can be sensed independently without mutual interference. The designed sensor provides extensive application possibilities for scenarios where multiparameter monitoring is required.

Waveguide-Integrated Light-Emitting Metal-Insulator-Graphene Tunnel Junctions

Ultrafast interfacing of electrical and optical signals at the nanoscale is highly desired for on-chip applications including optical interconnects and data processing devices. Here, we report electrically driven nanoscale optical sources based on metal-insulator-graphene tunnel junctions (MIG-TJs), featuring waveguided output with broadband spectral characteristics. Electrically driven inelastic tunneling in a MIG-TJ, realized by integrating a silver nanowire with graphene, provides broadband excitation of plasmonic modes in the junction with propagation lengths of several micrometers (∼10 times larger than that for metal-insulator-metal junctions), which therefore propagate toward the junction edge with low loss and couple to the nanowire waveguide with an efficiency of ∼70% (∼1000 times higher than that for metal-insulator-metal junctions). Alternatively, lateral coupling of the MIG-TJ to a semiconductor nanowire provides a platform for efficient outcoupling of electrically driven plasmonic signals to low-loss photonic waveguides, showing potential for applications at various integration levels.