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Kim C, Hong J, Jang J, Lee GY, Kim Y, Jeong Y, Lee B. Freeform metasurface color router for deep submicron pixel image sensors. SCIENCE ADVANCES 2024; 10:eadn9000. [PMID: 38809981 PMCID: PMC11135393 DOI: 10.1126/sciadv.adn9000] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2024] [Accepted: 04/23/2024] [Indexed: 05/31/2024]
Abstract
Advances in imaging technologies have led to a high demand for ultracompact, high-resolution image sensors. However, color filter-based image sensors, now miniaturized to deep submicron pixel sizes, face challenges such as low signal-to-noise ratio due to fewer photons per pixel and inherent efficiency limitations from color filter arrays. Here, we demonstrate a freeform metasurface color router that achieves ultracompact pixel sizes while overcoming the efficiency limitations of conventional architectures by splitting and focusing visible light instead of filtering. This development is enabled by a fully differentiable topology optimization framework to maximize the use of the design space while ensuring fabrication feasibility and robustness to fabrication errors. The metasurface can distribute an average of 85% of incident visible light according to the Bayer pattern with a pixel size of 0.6 μm. The device and design methodology enable the compact, high-sensitivity, and high-resolution image sensors for various modern technologies and pave the way for the advanced photonic device design.
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Affiliation(s)
- Changhyun Kim
- Department of Electrical and Computer Engineering, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
| | - Jongwoo Hong
- Department of Electrical and Computer Engineering, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
- Semiconductor R&D Center, Samsung Electronics Co. Ltd, Samsungjeonja-ro 1, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea
| | - Junhyeok Jang
- Department of Electrical and Computer Engineering, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
| | - Gun-Yeal Lee
- Department of Electrical and Computer Engineering, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
| | - Youngjin Kim
- Department of Electrical and Computer Engineering, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
| | - Yoonchan Jeong
- Department of Electrical and Computer Engineering, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
| | - Byoungho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-Gu, Seoul 08826, Republic of Korea
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Jun H, Choi J, Hwang J. Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications. SENSORS (BASEL, SWITZERLAND) 2023; 23:9824. [PMID: 38139671 PMCID: PMC10748017 DOI: 10.3390/s23249824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2023] [Revised: 12/10/2023] [Accepted: 12/12/2023] [Indexed: 12/24/2023]
Abstract
This paper introduces a new design of silicon nanowire (Si NW) phototransistor (PT) arrays conceived explicitly for improved CMOS image sensor performance, and comprehensive numerical investigations clarify the characteristics of the proposed devices. Each unit within this array architecture features a top-layer vertical Si NW optimized for the maximal absorption of incoming light across the visible spectrum. This absorbed light generates carriers, efficiently injected into the emitter-base junction of an underlying npn bipolar junction transistor (BJT). This process induces proficient amplification of the output collector current. By meticulously adjusting the diameters of the NWs, the PTs are tailored to exhibit distinct absorption characteristics, thus delineating the visible spectrum's blue, green, and red regions. This specialization ensures enriched color fidelity, a sought-after trait in imaging devices. Notably, the synergetic combination of the Si NW and the BJT augments the electrical response under illumination, boasting a quantum efficiency exceeding 10. In addition, by refining parameters like the height of the NW and gradient doping depth, the proposed PTs deliver enhanced color purity and amplified output currents.
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Affiliation(s)
| | | | - Jinyoung Hwang
- The School of Electronics and Information Engineering, Korea Aerospace University, Goyang-si 10540, Republic of Korea; (H.J.); (J.C.)
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Ballew C, Roberts G, Faraon A. Multi-dimensional wavefront sensing using volumetric meta-optics. OPTICS EXPRESS 2023; 31:28658-28669. [PMID: 37710682 DOI: 10.1364/oe.492440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Accepted: 08/08/2023] [Indexed: 09/16/2023]
Abstract
The ideal imaging system would efficiently capture information about the fundamental properties of light: propagation direction, wavelength, and polarization. Most common imaging systems only map the spatial degrees of freedom of light onto a two-dimensional image sensor, with some wavelength and/or polarization discrimination added at the expense of efficiency. Thus, one of the most intriguing problems in optics is how to group and classify multiple degrees of freedom and map them on a two-dimensional sensor space. Here we demonstrate through simulation that volumetric meta-optics consisting of a highly scattering, inverse-designed medium structured with subwavelength resolution can sort light simultaneously based on direction, wavelength, and polarization. This is done by mapping these properties to a distinct combination of pixels on the image sensor for compressed sensing applications, including wavefront sensing, beam profiling, and next-generation plenoptic sensors.
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Kuznetsov AV, Canós Valero A, Shamkhi HK, Terekhov P, Ni X, Bobrovs V, Rybin MV, Shalin AS. Special scattering regimes for conical all-dielectric nanoparticles. Sci Rep 2022; 12:21904. [PMID: 36535983 PMCID: PMC9763421 DOI: 10.1038/s41598-022-25542-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2022] [Accepted: 11/30/2022] [Indexed: 12/23/2022] Open
Abstract
All-dielectric nanophotonics opens a venue for a variety of novel phenomena and scattering regimes driven by unique optical effects in semiconductor and dielectric nanoresonators. Their peculiar optical signatures enabled by simultaneous electric and magnetic responses in the visible range pave a way for a plenty of new applications in nano-optics, biology, sensing, etc. In this work, we investigate fabrication-friendly truncated cone resonators and achieve several important scattering regimes due to the inherent property of cones-broken symmetry along the main axis without involving complex geometries or structured beams. We show this symmetry breaking to deliver various kinds of Kerker effects (generalized and transverse Kerker effects), non-scattering hybrid anapole regime (simultaneous anapole conditions for all the multipoles in a particle leading to the nearly full scattering suppression) and, vice versa, superscattering regime. Being governed by the same straightforward geometrical paradigm, discussed effects could greatly simplify the manufacturing process of photonic devices with different functionalities. Moreover, the additional degrees of freedom driven by the conicity open new horizons to tailor light-matter interactions at the nanoscale.
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Affiliation(s)
- Alexey V Kuznetsov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.
- Institute of Telecommunications, Riga Technical University, Riga, 1048, Latvia.
- Faculty of Physics, ITMO University, St. Petersburg, Russia, 197101.
| | - Adrià Canós Valero
- Faculty of Physics, ITMO University, St. Petersburg, Russia, 197101
- Institute of Physics, University of Graz, and NAWI Graz, 8010, Graz, Austria
| | - Hadi K Shamkhi
- Faculty of Physics, ITMO University, St. Petersburg, Russia, 197101
- A*STAR (Agency for Science, Technology and Research), Singapore, 138634, Singapore
| | - Pavel Terekhov
- Department of Electrical Engineering, The Pennsylvania State University, State College, Pennsylvania, 16802, USA
| | - Xingjie Ni
- Department of Electrical Engineering, The Pennsylvania State University, State College, Pennsylvania, 16802, USA
| | - Vjaceslavs Bobrovs
- Institute of Telecommunications, Riga Technical University, Riga, 1048, Latvia
| | - Mikhail V Rybin
- Faculty of Physics, ITMO University, St. Petersburg, Russia, 197101
| | - Alexander S Shalin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.
- Institute of Telecommunications, Riga Technical University, Riga, 1048, Latvia.
- Faculty of Physics, Moscow State University, Moscow, Russia, 119991.
- School of Optical and Electronic Information, Suzhou City University, Suzhou, 215104, China.
- Kotelnikov Institute of Radio Engineering and Electronics, 432000, Ulyanovsk, Russia.
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Hwang J, Kim MJ. NIR band-pass filters for CMOS image sensors constructed with NIR absorbing dyes and plasmonic nanoparticles. OPTICS EXPRESS 2022; 30:44533-44544. [PMID: 36522876 DOI: 10.1364/oe.475701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Accepted: 10/25/2022] [Indexed: 06/17/2023]
Abstract
Two NIR band-pass filters for CMOS image sensors are developed by incorporating NIR absorption dye and silver nanodisks simultaneously in a transparent polymer, one of which blocks the NIR near the wavelength of 750 nm and the other near 950 nm. They offer low NIR transmittance while maintaining high visible light transparency even at a thin film thickness of 500 nm. By superimposing the proposed NIR band-pass filters, an NIR cutoff filter with a thickness of 1 µm is formed that shields the NIR at wavelengths longer than 680 nm while remaining transparent in the visible range.
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Wu Z, Zhai Y, Zhang C, Zhang G, Wang Q. Compact multispectral photodetectors based on nanodisk arrays atop optical cavity substrates. OPTICS EXPRESS 2022; 30:25926-25935. [PMID: 36237112 DOI: 10.1364/oe.464282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Accepted: 06/17/2022] [Indexed: 06/16/2023]
Abstract
It is challenging for the multi-spectral photodetector to have a compact structure, high spectral resolution, and high detection efficiency. This paper reports on a new approach for compact multi-spectral visible light detecting based on the hexagonal lattice silver nanodisk arrays atop optical cavity substrates. Through numerical calculations and optimizations of experiments, we verified that the narrow band responsivity of the photodetector was caused by coupling the surface plasmonic resonances and cavity mode. The multi-spectral photodetector exhibited that the minimum FWHM and the maximum responsivity of was achieved to be 80 nm and 91.5 mA·W-1, respectively. Besides, we also analyzed the influence of the proposed structure on the energy wastage by numerical comparison. The proposed way for multi-spectral photodetector is promising to be an excellent design for the narrow band spectral detection. The design can also be easily integrated with CMOS devices and applied to other spectral regimes for different applications.
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Son H, Kim SJ, Hong J, Sung J, Lee B. Design of highly perceptible dual-resonance all-dielectric metasurface colorimetric sensor via deep neural networks. Sci Rep 2022; 12:8512. [PMID: 35595872 PMCID: PMC9122971 DOI: 10.1038/s41598-022-12592-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2021] [Accepted: 04/25/2022] [Indexed: 02/02/2023] Open
Abstract
Colorimetric sensing, which provides effective detection of bio-molecular signals with one's naked eye, is an exceptionally promising sensing technique in that it enables convenient detection and simplification of entire sensing system. Though colorimetric sensors based on all-dielectric nanostructures have potential to exhibit distinct color variations enabling manageable detection due to their trivial intrinsic loss, there is crucial limitation that the sensitivity to environmental changes lags behind their plasmonic counterparts because of relatively small region of near field-analyte interaction of the dielectric Mie-type resonator. To overcome this challenge, we proposed all-dielectric metasurface colorimetric sensor which exhibits dual-resonance in the visible region. Thereafter, we confirmed with simulation that, in the elaborately designed dual-Lorentzian-type spectra, highly perceptible variations of structural color were manifested even in minute change of peripheral refractive index. In addition to verifying physical effectiveness of the superior colorimetric sensing performance appearing in the dual-resonance type sensor, by combining advanced optimization technique utilizing deep neural networks, we attempted to maximize sensing performance while obtaining dramatic improvement of design efficiency. Through well-trained deep neural network that accurately simulates the input target spectrum, we numerically verified that designed colorimetric sensor shows a remarkable sensing resolution distinguishable up to change of refractive index of 0.0086.
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Affiliation(s)
- Hyunwoo Son
- Inter-University Semiconductor Research Center, School of Electrical and Computer Engineering, Seoul National University, Gwanakro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Sun-Je Kim
- Department of Physics, Myongji University, Myongjiro 116, Namdong, Cheoin-Gu, Yongin, Gyeonggi-Do, 17058, Republic of Korea
| | - Jongwoo Hong
- Inter-University Semiconductor Research Center, School of Electrical and Computer Engineering, Seoul National University, Gwanakro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Jangwoon Sung
- Inter-University Semiconductor Research Center, School of Electrical and Computer Engineering, Seoul National University, Gwanakro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Byoungho Lee
- Inter-University Semiconductor Research Center, School of Electrical and Computer Engineering, Seoul National University, Gwanakro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
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Zhang J, Yu X, Dong J, Yang W, Liu S, Shen C, Duan J, Deng X. A Plasmonic Infrared Multiple-Channel Filter Based on Gold Composite Nanocavities Metasurface. NANOMATERIALS 2021; 11:nano11071824. [PMID: 34361210 PMCID: PMC8308425 DOI: 10.3390/nano11071824] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/07/2021] [Revised: 07/09/2021] [Accepted: 07/12/2021] [Indexed: 01/17/2023]
Abstract
A plasmonic near-infrared multiple-channel filter is numerically and experimentally investigated based on a gold periodic composite nanocavities metasurface. By the interference among different excited plasmonic modes on the metasurface, the multipeak extraordinary optical transmission (EOT) phenomenon is induced and utilized to realize multiple-channel filtering. Investigated from the simulated transmission spectrum of the metasurface, the positions and intensity of transmission peaks are tuned by the geometrical parameters of the metasurface and environmental refractive index. The fabricated metasurface approached transmission peaks at 1128 nm, 1245 nm, and 1362 nm, functioning as a three-passbands filter. With advantages of brief single-layer fabrication and multi-frequency selectivity, the proposed plasmonic filter has potential possibilities of integration in nano-photonic switching, detecting and biological sensing systems.
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Affiliation(s)
- Jialin Zhang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Key Laboratory for Laser Plasmas (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; (J.Z.); (X.Y.); (W.Y.); (S.L.); (C.S.); (J.D.)
| | - Xuanyi Yu
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Key Laboratory for Laser Plasmas (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; (J.Z.); (X.Y.); (W.Y.); (S.L.); (C.S.); (J.D.)
| | - Jingxin Dong
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
| | - Weiji Yang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Key Laboratory for Laser Plasmas (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; (J.Z.); (X.Y.); (W.Y.); (S.L.); (C.S.); (J.D.)
| | - Shuang Liu
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Key Laboratory for Laser Plasmas (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; (J.Z.); (X.Y.); (W.Y.); (S.L.); (C.S.); (J.D.)
| | - Chongyang Shen
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Key Laboratory for Laser Plasmas (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; (J.Z.); (X.Y.); (W.Y.); (S.L.); (C.S.); (J.D.)
| | - Jiacheng Duan
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Key Laboratory for Laser Plasmas (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; (J.Z.); (X.Y.); (W.Y.); (S.L.); (C.S.); (J.D.)
| | - Xiaoxu Deng
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Key Laboratory for Laser Plasmas (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; (J.Z.); (X.Y.); (W.Y.); (S.L.); (C.S.); (J.D.)
- Correspondence:
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