Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN

Influence of growth interruption on the morphology and luminescence properties of AlGaN/GaN ultraviolet multi-quantum wells

The influence of growth interruption on the surface and luminescence properties of AlGaN/GaN ultraviolet multi-quantum wells (UV MQWs) is investigated. It is found that when the well and barrier layers of MQW samples are continuously grown at the same temperature, they have lower edge dislocation density and flatter surface of MQWs compared to samples with interrupted well and barrier growth. Moreover, continuous growth of well and barrier layers is more conducive to improving the luminescence efficiency of MQWs. This phenomenon is attributed to more impurity incorporation induced by the growth interruption, while a continuous growth of well and barrier can reduce surface diffusion and migration processes of atoms, reducing the defects and surface roughness of MQWs. In addition, the continuous growth of well and barrier can better control the reaction between Al and N atoms, avoiding the formation of excessively high Al content AlGaN at the well/barrier interface, thus improving the luminescence of UV MQWs.

Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces

Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects within space charge regions covering cores of dislocations. Space charge regions also may act as local volumes of enhanced non-radiative recombination, deteriorating the photoluminescence efficiency. Surface etching has appeared to be an efficient means to increase the photoluminescence yield from MOCVD GaN materials. This work aimed to improve the scintillation characteristics of MOCVD GaN by a wet etching method. An additional blue photo-luminescence (B-PL) band peaking at 2.7-2.9 eV and related to dislocations was discovered. This B-PL band intensity appeared to be dependent on wet etching exposure. The intensity of the B-PL was considerably enhanced when recorded at rather low temperatures. This finding resembles PL thermal quenching of B-PL centers. The mechanisms of scintillation intensity and spectrum variations were examined by coordinating the complementary photo-ionization and PL spectroscopy techniques. Analysis of dislocation etch pits was additionally performed by scanning techniques, such as confocal and atomic force microscopy. It was proved that this blue luminescence band, which peaked at 2.7-2.9 eV, is related to point defects those decorate dislocation cores. It was shown that the intensity of this blue PL band was increased due to enhancement of light extraction efficiency, dependent on the surface area of either single etch-pit or total etched crystal surface.

Capillary-force-assisted self-assembly of gold nanoparticles into highly ordered plasmonic thin films for ultrasensitive SERS

In this study, a capillary device based on the surface plasmon-enhanced Raman scattering effect was prepared by a simple and easy method. First, the capillary was treated with APTES solution. Due to the electrostatic effect, gold nanoparticles could be easily and tightly assembled in the capillary inner wall. On this basis, the effects of changing the concentration of APTES, the concentration of colloids and the soaking time of the capillary in the colloids on the assembly of gold nanoparticles on the inner wall of the capillary were studied, and the SERS enhancement effect under different conditions was analyzed, and the optimal solution was successfully found. At the same time, the reason why the capillary substrate shows better SERS performance than the traditional planar substrate is deeply discussed. Since the nanoparticles can be attached to the upper and lower surfaces of the inner wall of the capillary, the utilization rate of nanoparticles and laser is improved, thereby achieving higher enhancement. For the detection of the probe molecule rhodamine 6G, it was proved that the substrate has good uniformity and the lowest detection limit can reach 10^-10 M. Finally, the real-life pesticide thiram and the food additive aspartame were tested, and the detection limits could reach 10^-6 M and 0.25 g L^-1. It is confirmed that the prepared capillary shows excellent SERS performance and can be used for rapid detection in various fields.

Transient behavior of AlGaN photoluminescence induced by carbon-related defect reactions

We have observed the transient behavior in the AlGaN photoluminescence. Under an excitation of 325 nm He-Cd laser beam, the blue luminescence (BL) bands and yellow luminescence (YL) bands of AlGaN vary with increasing illumination time. We propose that the chemical reactions between BL-related C_NO_N-H_i (C_N-H_i) and YL-related C_N-H_i (C_N) defect states are the cause of such a phenomenon. The BL transition temperature (T_t) is defined as the temperature at which the intensity of BL bands induced by C_NO_N-H_i is equal to that originated from C_N-H_i. Only at T_t, BL shows a peak energy variation due to the exposure. The T_t of AlGaN is higher than what is similarly detected in GaN because of the high reactivity of Al to O.

Application of patterned sapphire substrate for III-nitride light-emitting diodes

Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state lighting and high-resolution displays. As one of the widely used substrates, sapphire shows superiority for heteroepitaxial growth of III-nitride light-emitting diode (LED) structure, due to the advantages of stability, low cost, high mechanical strength, as well as mature fabrication technology. However, realization of efficient LEDs grown on sapphire substrate is impeded by high density of defects in epilayers and low light extraction efficiency. The emergence of patterned sapphire substrate (PSS) turns out to be a promising and effective technology to overcome these problems and enhance the LED performances. In this review, we first introduce the background and recent advances of PSS applied in III-nitride visible and ultraviolet LEDs are. Then, we summarize the fabrication methods of PSS, together with novel methods to define nanometre-scale patterned structures. We further demonstrate the effect of PSS that contributes to reduce the threading dislocation density (TDD) of epilayers in detail. Meanwhile, mechanism of light extraction efficiency enhancement by adopting PSS is presented based on numerical analysis. Next, we explore the influence of PSS structural parameters (e.g. pattern size, pattern shape and aspect ratio) on LED performances, spanning from visible to deep ultraviolet UV emission region. Finally, challenges and potential prospects in PSS for future LED development are proposed and forecasted as well.

Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films

In this study, we investigate a novel simple methodology to synthesize gallium nitride nanoparticles (GaN) that could be used as an active layer in light-emitting diode (LED) devices by combining the crystal growth technique with thermal vacuum evaporation. The characterizations of structural and optical properties are carried out with different techniques to investigate the main featured properties of GaN bulk alloys and their thin films. Field emission scanning electron microscopy (FESEM) delivered images in bulk structures that show micro rods with an average diameter of 0.98 µm, while their thin films show regular microspheres with diameter ranging from 0.13 µm to 0.22 µm. X-ray diffraction (XRD) of the bulk crystals reveals a combination of 20% hexagonal and 80% cubic structure, and in thin films, it shows the orientation of the hexagonal phase. For HRTEM, these microspheres are composed of nanoparticles of GaN with diameter of 8–10 nm. For the optical behavior, a band gap of about from 2.33 to 3.1 eV is observed in both cases as alloy and thin film, respectively. This article highlights the fabrication of the major cubic structure of GaN bulk alloy with its thin films of high electron lifetime.