Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regime

Upconversion-pumped femtosecond thulium laser at 2309 nm mode-locked by a GaSb-based SESAM

We report on a femtosecond thulium laser operating on the 3H4 → 3H5 transition with upconversion pumping around 1 µm and passively mode-locked by a GaSb-based SEmiconductor Saturable Absorber Mirror (SESAM). This laser employs a 6 at.% Tm:LiYF4 laser crystal and a polarization maintaining Yb-fiber master oscillator power amplifier at 1043 nm as a pump source addressing the 3F4 → 3F2,3 excited-state absorption transition of Tm3+ ions. In the continuous-wave regime, the Tm-laser generates 616 mW at ∼2313 nm with a slope efficiency of 10.0% (vs. the incident pump power) and a linear polarization (π). By implementing a type-I SESAM with a single ternary strained In0.33Ga0.67Sb quantum well embedded in GaSb for sustaining and stabilizing the soliton pulse shaping, the self-starting mode-locked Tm-laser generated pulses as short as 870 fs at a central wavelength of 2309.4 nm corresponding to an average output power of 208 mW at a pulse repetition rate of 105.08 MHz and excellent mode-locking stability. The output power was scaled to 450 mW at the expense of a longer pulse duration of 1.93 ps. The nonlinear parameters of the SESAM are also reported.

2.8-µm polarization-maintaining Er fiber laser mode-locked by a GaSb-based SESAM

A GaSb-based SEmiconductor Saturable Absorber Mirror (SESAM) enables continuous-wave picosecond mode-locked operation with excellent stability of a polarization-maintaining mid-infrared Er:ZBLAN fiber laser. The GaSb-based SESAM mode-locked fiber laser delivers an average output power of 190 mW at 2.76 µm at a repetition rate of 32.07 MHz (corresponding to a pulse energy of ∼6 nJ) and exhibits a high signal-to-noise ratio of ∼80 dB. The polarization extinction ratio is more than 23 dB. By employing an intracavity diffraction grating, the laser wavelength is continuously tunable across 2.706-2.816 µm. Passively Q-switched operation of this laser is also demonstrated.

Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operation

Dual-comb lasers are a new class of ultrafast lasers that enable fast, accurate and sensitive measurements without any mechanical delay lines. Here, we demonstrate a 2-µm laser called MIXSEL (Modelocked Integrated eXternal-cavity Surface Emitting Laser), based on an optically pumped passively modelocked semiconductor thin disk laser. Using III-V semiconductor molecular beam epitaxy, we achieve a center wavelength in the shortwave infrared (SWIR) range by integrating InGaSb quantum well gain and saturable absorber layers onto a highly reflective mirror. The cavity setup consists of a linear straight configuration with the semiconductor MIXSEL chip at one end and an output coupler a few centimeters away, resulting in an optical comb spacing between 1 and 10 GHz. This gigahertz pulse repetition rate is ideal for ambient pressure gas spectroscopy and dual-comb measurements without requiring additional stabilization. In single-comb operation, we generate 1.5-ps pulses with an average output power of 28 mW, a pulse repetition rate of 4 GHz at a center wavelength of 2.035 µm. For dual-comb operation, we spatially multiplex the cavity using an inverted bisprism operated in transmission, achieving an adjustable pulse repetition rate difference estimated up to 4.4 MHz. The resulting heterodyne beat reveals a low-noise down-converted microwave frequency comb, facilitating coherent averaging.

50-W average power Ho:YAG SESAM-modelocked thin-disk oscillator at 2.1 µm

Ultrafast laser systems operating with high-average power in the wavelength range from 1.9 µm to 3 µm are of interest for a wide range of applications for example in spectroscopy, material processing and as drivers for secondary sources in the XUV spectral region. In this area, laser systems based on holmium-doped gain materials directly emitting at 2.1 µm have made significant progress over the past years, however so far only very few results were demonstrated in power-scalable high-power laser geometries. In particular, the thin-disk geometry is promising for directly modelocked oscillators with high average power levels that are comparable to amplifier systems at MHz repetition rate. In this paper, we demonstrate semiconductor saturable absorber mirror (SESAM) modelocked Ho:YAG thin-disk lasers (TDLs) emitting at 2.1-µm wavelength with record-holding performance levels. In our highest average power configuration, we reach 50 W of average power, with 1.13-ps pulses, 2.11 µJ of pulse energy and ∼1.9 MW of peak power. To the best of our knowledge, this represents the highest average power, as well as the highest output pulse energy so far demonstrated from a modelocked laser in the 2-µm wavelength region. This record performance level was enabled by the recent development of high-power GaSb-based SESAMs with low loss, adapted for high intracavity power and pulse energy. We also explore the limitations in terms of reaching shorter pulse durations at high power with this gain material in the disk geometry and using SESAM modelocking, and present first steps in this direction, with the demonstration of 30 W of output power, with 692-fs pulses in another laser configuration. In the near future, with the development of a next generation of SESAM samples for this wavelength region, we believe higher pulse energy approaching the 10-µJ regime, and sub-500-fs pulses should be straightforward to reach using SESAM modelocking.

Nonlinear reflectivity of AlGaInP SESAMs for mode locking in the red spectral range

Mode-locked vertical external-cavity semiconductor lasers (VECSELs) are a wavelength-versatile laser that relies on a semiconductor saturable absorber mirror (SESAM) to initiate pulsed emission while simultaneously significantly influencing the pulse's properties. A SESAM can be characterized using a nonlinear reflectivity setup, realized here in the red spectral range around 660 nm and achieving a moderate peak-to-peak variation of 0.17%. We use our home-built mode-locked VECSEL to reach a high maximum fluence up to 430 µJ/cm² with strongly chirped 7.5 ps pulses. This allows the first-of-its-kind characterization of GaInP quantum well SESAMs, thereby revealing saturation fluences of 38 µJ/cm² and 34 µJ/cm² with modulation depths of 5% and 10.3% for SESAMs comprising one or two active quantum wells, respectively. For all structures, a nonsaturable loss of 2.8% is found and attributed to scattering loss.

Passively Q-switched Tm:YAP laser with a tantalum aluminum carbide saturable absorber

Tantalum aluminum carbide (Ta₄AlC₃) phase ceramic (MAX) material has attracted much attention because of its high conductivity, high strength, corrosion resistance, and good optical properties. However, there are too few reports on lasers with Ta₄AlC₃-based saturable absorbers (SAs). We prepared and characterized a Ta₄AlC₃-based SA whose nonlinear absorption performances were achieved at a 2 µm waveband range and which was used in a passively Q-switched (PQS) Tm:YAP laser. In the PQS mode, a maximum average output power of 0.78 W was achieved with the central output wavelength of 1991.86 nm from a PQS Tm:YAP laser, corresponding to a pulse duration of 926 ns at 143.8 kHz.

Semiconductor saturable absorber mirror in the 3-5 µm mid-infrared region

Semiconductor saturable absorber mirrors (SESAMs) have been regarded as a revolutionary technology for ultrafast mode-locked lasers, producing numerous landmark laser breakthroughs. However, the operating wavelength of existing SESAMs is limited to less than 3 µm. In this study, we create a 3-5 µm mid-infrared (MIR) SESAM by engineering an InAs/GaSb type-II superlattice. Bandgap engineering and the strong coupling between potential wells in a superlattice enable a broadband response of saturable absorption in the 3-5 µm spectral range. Using the fabricated SESAM, we realize a SESAM mode-locked Er:ZBLAN fiber laser at 3.5 µm, which delivers MIR ultrashort pulses with high long-term stability. The breakthrough of SESAM fabrication in the MIR will promote the development of MIR ultrafast coherent sources and related application fields.

High-power low-noise 2-GHz femtosecond laser oscillator at 2.4 µm

Femtosecond lasers with high repetition rates are attractive for spectroscopic applications with high sampling rates, high power per comb line, and resolvable lines. However, at long wavelengths beyond 2 µm, current laser sources are either limited to low output power or repetition rates below 1 GHz. Here we present an ultrafast laser oscillator operating with high output power at multi-GHz repetition rate. The laser produces transform-limited 155-fs pulses at a repetition rate of 2 GHz, and an average power of 0.8 W, reaching up to 0.7 mW per comb line at the center wavelength of 2.38 µm. We have achieved this milestone via a Cr²⁺-doped ZnS solid-state laser modelocked with an InGaSb/GaSb SESAM. The laser is stable over several hours of operation. The integrated relative intensity noise is 0.15% rms for [10 Hz, 100 MHz], and the laser becomes shot noise limited (-160 dBc/Hz) at frequencies above 10 MHz. Our timing jitter measurements reveal contributions from pump laser noise and relaxation oscillations, with a timing jitter of 100 fs integrated over [3 kHz, 100 MHz]. These results open up a path towards fast and sensitive spectroscopy directly above 2 µm.

High-power modelocked thin-disk oscillators as potential technology for high-rate material processing

High average power femtosecond lasers have made spectacular progress in the last decades - moving from laboratory-based systems with maximum average powers of tens of watts to kilowatt-class mature industrial systems in a short time. The availability of such systems opens new possibilities in many fields; one of the most prominent ones that have driven many of these technological advances is precise high-speed material processing, where ultrashort pulses have long been recognized to provide highest precision processing of virtually any material, and high average power extends these capabilities to highest processing rates. Here, we focus our attention on one high-average power technology with large unexplored potential for this specific application: directly modelocked multi-MHz repetition frequency high-power thin-disk oscillators. We review their latest state-of-the-art and discuss future directions and challenges, specifically with this application field in mind.

High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization

We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of around 2μ m. To date, intracavity heatspreaders have been required for good average output power, which have many trade-offs, especially for passive modelocking. Here we demonstrate a record high average output power of 810 mW without an intracavity heatspreader using a backside-cooled non-resonant VECSEL chip optimized for modelocking. In addition, we introduce and demonstrate an optical characterization for a wavelength range of 1.9 to 3μ m to precisely measure wavelength-dependent gain saturation and spectral gain. Gain characteristics are measured as a function of wavelength, fluence, pump power and temperature. Small signal gain of more than 5%, small saturation fluences and broad gain bandwidths of more than 90 nm are demonstrated. In comparison to a commercial VECSEL chip with an intracavity heatspreader, we have obtained similar average output power even though our VECSEL chip is designed for antiresonance.

500 W peak power cavity dumped 2 µm GaSb-based VECSEL

A single transverse mode high-pulse-energy vertical-external-cavity surface-emitting laser (VECSEL) was developed. The GaSb-based VECSEL emits at a wavelength of 2.04 µm with a peak power exceeding 500 W while maintaining good beam quality. The cavity employs a Pockels cell combined with a low-loss thin film polarizer to selectively dump the intracavity energy into a 10 ns pulse. The laser has promise for incoherent LIDAR, materials processing, gas sensing, and nonlinear optics.