Semi-transparent reduced graphene oxide photodetectors for ultra-low power operation

Ambient Processed rGO/Ti3CNTx MXene Thin Film with High Oxidation Stability, Photosensitivity, and Self-Cleaning Potential

Solution-based processing offers advantages for producing thin films due to scalability, low cost, simplicity, and benignity to the environment. Here, we develop conductive and photoactivated self-cleaning reduced graphene oxide (rGO)/Ti3CNTx MXene thin films via spin coating under ambient conditions. The addition of a thin rGO layer on top of Ti3CNTx resulted in up to 45-fold improvement in the environmental stability of the film compared to the bare Ti3CNTx film. The optimized rGO/Ti3CNTx thin film exhibits an optical transmittance of 74% in the visible region of the spectrum and a sheet resistance of 19 kΩ/sq. The rGO/Ti3CNTx films show high rhodamine B discoloration activity upon light irradiation. Under UV irradiation, the electrically conductive MXene in combination with in situ formed semiconducting titanium oxide induces photogenerated charge carriers, which could potentially be used in photocatalysis. On the other hand, due to film transparency, white light irradiation can bleach the adsorbed dye via photolysis. This study opens the door for using MXene thin films as multifunctional coatings with conductive and potentially self-cleaning properties.

Effect of Electrolytic Medium on the Electrochemical Reduction of Graphene Oxide on Si(111) as Probed by XPS

The wafer-scale integration of graphene is of great importance in view of its numerous applications proposed or underway. A good graphene–silicon interface requires the fine control of several parameters and may turn into a high-cost material, suitable for the most advanced applications. Procedures that can be of great use for a wide range of applications are already available, but others are to be found, in order to modulate the offer of different types of materials, at different levels of sophistication and use. We have been exploring different electrochemical approaches over the last 5 years, starting from graphene oxide and resulting in graphene deposited on silicon-oriented surfaces, with the aim of understanding the reactions leading to the re-establishment of the graphene network. Here, we report how a proper choice of both the chemical environment and electrochemical conditions can lead to a more controlled and tunable graphene–Si(111) interface. This can also lead to a deeper understanding of the electrochemical reactions involved in the evolution of graphene oxide to graphene under electrochemical reduction. Results from XPS, the most suitable tool to follow the presence and fate of functional groups at the graphene surface, are reported, together with electrochemical and Raman findings.

Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector

To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatible Mg2Si/Si PDs are required. First, the structural model of the Mg2Si/Si heterojunction was established using the Silvaco Atlas module. Second, the effects of the doping concentrations of Mg2Si and Si on the photoelectric properties of the Mg2Si/Si heterojunction PD, including the energy band, breakdown voltage, dark current, forward conduction voltage, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on/off ratio, response time, and recovery time, were simulated. At different doping concentrations, the heterojunction energy band shifted, and a peak barrier appeared at the conduction band of the Mg2Si/Si heterojunction interface. When the doping concentrations of Si and Mg2Si layer were 1017, and 1016 cm−3, respectively, the Mg2Si/Si heterojunction PD could obtain optimal photoelectric properties. Under these conditions, the maximum EQE was 70.68% at 800 nm, the maximum responsivity was 0.51 A/W at 1000 nm, the minimum NEP was 7.07 × 10−11 WHz–1/2 at 1000 nm, the maximum detectivity was 1.4 × 1010 Jones at 1000 nm, and the maximum on/off ratio was 141.45 at 1000 nm. The simulation and optimization result also showed that the Mg2Si/Si heterojunction PD could be used for visible and SWIR photodetection in the wavelength range from 400 to 1500 nm. The results also provide technical support for the future preparation of eco-friendly heterojunction photodetectors.