Designing fast and efficient electrically driven phase change photonics using foundry compatible waveguide-integrated microheaters

Time-Resolved Temperature Mapping Leveraging the Strong Thermo-Optic Effect in Phase-Change Materials

Optical phase-change materials are highly promising for emerging applications such as tunable metasurfaces, reconfigurable photonic circuits, and non-von Neumann computing. However, these materials typically require both high melting temperatures and fast quenching rates to reversibly switch between their crystalline and amorphous phases: a significant challenge for large-scale integration. In this work, we use temperature-dependent ellipsometry to study the thermo-optic effect in GST and use these results to demonstrate an experimental technique that leverages the thermo-optic effect in GST to enable both spatial and temporal thermal measurements of two common electro-thermal microheater designs currently used by the phase-change community. Our approach shows excellent agreement between experimental results and numerical simulations and provides a noninvasive method for rapid characterization of electrically programmable phase-change devices.

Compact reconfigurable on-chip polarization beam splitters enabled by phase change material

In this paper, we present the design of a compact reconfigurable polarization beam splitter (PBS) enabled by ultralow-loss phase-changing Sb2Se3. By harnessing the phase-change-mediated mode coupling in a directional coupler (DC), guided light with different polarizations could be routed into different paths and this routing could be dynamically switched upon the phase change of Sb2Se3. With an optimized DC region, the proposed PBS demonstrates efficient polarization splitting with crosstalk less than -21.3 dB and insertion loss less than 0.16 dB at 1550 nm for both phase states of Sb2Se3, and features energy efficient property benefitting from the nonvolatile phase change of Sb2Se3, which holds great potentials for on-chip applications involving polarization control, including polarization-division multiplexing system, quantum photonics, microwave photonics, etc.

Non-volatile electrically programmable integrated photonics with a 5-bit operation

Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb₂S₃)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb₂S₃-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of [Formula: see text]. Remarkably, Sb₂S₃ is programmed into fine intermediate states by applying multiple identical pulses, providing controllable multilevel operations. Through dynamic pulse control, we achieve 5-bit (32 levels) operations, rendering 0.50 ± 0.16 dB per step. Using this multilevel behavior, we further trim random phase error in a balanced Mach-Zehnder interferometer.

Sb2Se3-assisted reconfigurable broadband Y-junction

A Y-junction is commonly used in on-chip systems because of its excellent broadband characteristic. However, due to the lack of regulation methods, in most cases Y-junctions are used as passive components. In this work we propose a reconfigurable broadband Y-junction based on phase change material. When Sb₂Se₃ layers on two branches are at different states, the Y-junction is asymmetric and works as a reconfigurable dual-mode (de)multiplexer. When both Sb₂Se₃ layers are amorphous, the Y-junction is symmetric and works as a dual-mode 3-dB power splitter. To achieve quasi-adiabatic evolution for both states in a short device length, we propose a segmented fast quasi-adiabatic method. By dividing the gap region into multiple segments and optimizing the geometry and length of each segment, the proposed device achieves bandwidth > 100 nm (crosstalk < -20 dB) in a compact footprint of 19.3 × 3 µm². The simulation result shows that at center wavelength of 1550 nm, the crosstalk and insertion loss of our device are < -41 dB and <0.12 dB, respectively, under asymmetric mode (de)multiplex state, and the excess loss is within 0.06 dB under symmetric power splitting state. The proposed device may contribute to the realization of a high-bandwidth, flexible mode-division-multiplexing network.

Compact nonvolatile 2×2 photonic switch based on two-mode interference

On-chip nonvolatile photonic switches enabled by phase change materials (PCMs) are promising building blocks for power-efficient programmable photonic integrated circuits. However, large absorption loss in conventional PCMs (such as Ge₂Sb₂Te₅) interacting with weak evanescent waves in silicon waveguides usually leads to high insertion loss and a large device footprint. In this paper, we propose a 2×2 photonic switch based on two-mode interference in a multimode slot waveguide (MSW) with ultralow loss Sb₂S₃ integrated inside the slot region. The MSW supports two lowest order TE modes, i.e., symmetric TE₀₀ and antisymmetric TE₀₁ modes, and the phase of Sb₂S₃ could actively tune two-mode interference behavior. Owing to the enhanced electric field in the slot, the interaction strength between modal field and Sb₂S₃ could be boosted, and a photonic switch containing a ∼9.4 µm-long Sb₂S₃-MSW hybrid section could effectively alter the light transmission between bar and cross ports upon the phase change of Sb₂S₃ with a cross talk (CT) less than -13.6 dB and an insertion loss (IL) less than 0.26 dB in the telecommunication C-band. Especially at 1550 nm, the CT in the amorphous (crystalline) Sb₂S₃ is -36.1 dB (-31.1 dB) with a corresponding IL of 0.073 dB (0.055 dB). The proposed 2×2 photonic switch is compact in size and compatible with on-chip microheaters, which may find promising applications in reconfigurable photonic devices.