|
1
|
Sheng Z, Yue L, Zhao Y, Jin G, Zhang Q, Fu S, Wang X, Wang X, Wang X. A high figure of merit of phonon-polariton waveguide modes with hbn/SiO 2/graphene /hBN ribs waveguide in mid-infrared range. Heliyon 2024; 10:e26727. [PMID: 38486729 PMCID: PMC10937571 DOI: 10.1016/j.heliyon.2024.e26727] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Revised: 02/19/2024] [Accepted: 02/19/2024] [Indexed: 03/17/2024] Open
Abstract
Natural hyperbolic materials can confine electromagnetic waves at the nanoscale. In this study, we propose a waveguide design that combines a high quality factor (FOM) with low loss, utilizing hexagonal boron nitride and graphene and gold substrate. The waveguide consists of a dielectric rib with a graphene layer sandwiched between two hBN ribs. Numerical simulations demonstrate the existence of two guided modes in the proposed waveguide within the second reststrahlen band (1360.0 cm-1<ω < 1609.8 cm-1) of hBN. These modes are formed by coupling the hyperbolic phonon polariton (HPhP) of two hBN rib in the middle dielectric rib and are subsequently modulated by a graphene layer. Interestingly, we observe variations in four transmission parameters, namely effective length, figure of merit, device length, and propagation loss of the guided modes, with respect to the operation frequency and gate voltage. By optimizing the waveguide's geometry parameters and dielectric permittivity, the modal properties were analyzed. Simulation results indicate that optimizing the waveguide size parameters enables us to achieve a high FOM of 4.0 × 107. The proposed waveguide design offers a promising approach for designing tunable mid infrared range waveguides on photonic chips, and this concept can be extended to other 2D materials and hyperbolic materials.
Collapse
Affiliation(s)
- Zhou Sheng
- Department of Basic Courses, Guangzhou Maritime University, Guangzhou, 510725, China
- Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China
- Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin, 150080, China
| | - Liu Yue
- College of Science, Jiamusi University, Jiamusi, 154000, China
- Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China
| | - Yue Zhao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China
| | - Gao Jin
- Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China
| | - Qiang Zhang
- Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China
| | - Shufang Fu
- Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China
| | - Xiangguang Wang
- Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China
| | - Xuan Wang
- Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin, 150080, China
| | - Xuanzhang Wang
- Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China
| |
Collapse
|
|
2
|
Teng D, Tian Y, Hu X, Guan Z, Gao W, Li P, Fang H, Yan J, Wang Z, Wang K. Sodium-Based Cylindrical Plasmonic Waveguides in the Near-Infrared. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1950. [PMID: 35745290 PMCID: PMC9229541 DOI: 10.3390/nano12121950] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Revised: 06/03/2022] [Accepted: 06/06/2022] [Indexed: 02/01/2023]
Abstract
Subwavelength optical field confinement and low-loss propagation are of great significance for compact photonic integration. However, the field confinement capability of plasmonic devices is always accompanied by the inherent Ohmic loss. Although recent studies have shown that sodium (Na) exhibits lower loss than noble metals in the near-infrared band, the field confinement ability has not been adequately assessed. Meanwhile, the high chemical reactivity of Na should be regulated for practical application. Two dielectric-coated Na nanowires, consisting of cylindrical Na nanowires with one or two dielectric layers as claddings, are proposed and investigated in this paper. Based on finite element calculations, we thoroughly study the modal fields and low-loss propagation properties of dielectric-coated Na nanowires. The results demonstrate that Na exhibits lower loss and stronger field confinement than the typical plasmonic material silver. These findings indicate the performance of plasmonic devices can be considerably improved by employing the metal Na compared with devices using noble metals, which may promote the applications in subwavelength photonic devices.
Collapse
Affiliation(s)
- Da Teng
- College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China; (Y.T.); (X.H.); (Z.G.); (W.G.); (P.L.); (H.F.); (J.Y.); (Z.W.)
| | - Yuanming Tian
- College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China; (Y.T.); (X.H.); (Z.G.); (W.G.); (P.L.); (H.F.); (J.Y.); (Z.W.)
| | - Xuemei Hu
- College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China; (Y.T.); (X.H.); (Z.G.); (W.G.); (P.L.); (H.F.); (J.Y.); (Z.W.)
| | - Ziyi Guan
- College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China; (Y.T.); (X.H.); (Z.G.); (W.G.); (P.L.); (H.F.); (J.Y.); (Z.W.)
| | - Wencang Gao
- College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China; (Y.T.); (X.H.); (Z.G.); (W.G.); (P.L.); (H.F.); (J.Y.); (Z.W.)
| | - Pengyuan Li
- College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China; (Y.T.); (X.H.); (Z.G.); (W.G.); (P.L.); (H.F.); (J.Y.); (Z.W.)
| | - Hongli Fang
- College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China; (Y.T.); (X.H.); (Z.G.); (W.G.); (P.L.); (H.F.); (J.Y.); (Z.W.)
| | - Jianjun Yan
- College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China; (Y.T.); (X.H.); (Z.G.); (W.G.); (P.L.); (H.F.); (J.Y.); (Z.W.)
| | - Zhiwen Wang
- College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China; (Y.T.); (X.H.); (Z.G.); (W.G.); (P.L.); (H.F.); (J.Y.); (Z.W.)
| | - Kai Wang
- Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| |
Collapse
|