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Joe G, Chia C, Pingault B, Haas M, Chalupnik M, Cornell E, Kuruma K, Machielse B, Sinclair N, Meesala S, Lončar M. High Q-Factor Diamond Optomechanical Resonators with Silicon Vacancy Centers at Millikelvin Temperatures. NANO LETTERS 2024; 24:6831-6837. [PMID: 38815209 DOI: 10.1021/acs.nanolett.3c04953] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
Phonons are envisioned as coherent intermediaries between different types of quantum systems. Engineered nanoscale devices, such as optomechanical crystals (OMCs), provide a platform to utilize phonons as quantum information carriers. Here we demonstrate OMCs in diamond designed for strong for interactions between phonons and a silicon vacancy (SiV) spin. Using optical measurements at millikelvin temperatures, we measure a line width of 13 kHz (Q-factor of ∼4.4 × 105) for a 6 GHz acoustic mode, a record for diamond in the GHz frequency range and within an order of magnitude of state-of-the-art line widths for OMCs in silicon. We investigate SiV optical and spin properties in these devices and outline a path toward a coherent spin-phonon interface.
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Affiliation(s)
- Graham Joe
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Cleaven Chia
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore
| | - Benjamin Pingault
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States
- QuTech, Delft University of Technology, 2600 GA Delft, The Netherlands
- Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Michael Haas
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Michelle Chalupnik
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Eliza Cornell
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Kazuhiro Kuruma
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Bartholomeus Machielse
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Neil Sinclair
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Srujan Meesala
- Institute for Quantum Information and Matter and Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Marko Lončar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, United States
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2
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Boyce A, Li H, Wilson NC, Acil D, Shams-Ansari A, Chakravarthi S, Pederson C, Shen Q, Yama N, Fu KMC, Loncar M, Mikkelsen MH. Plasmonic Diamond Membranes for Ultrafast Silicon Vacancy Emission. NANO LETTERS 2024; 24:3575-3580. [PMID: 38478720 PMCID: PMC10979444 DOI: 10.1021/acs.nanolett.3c04002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 02/16/2024] [Accepted: 02/20/2024] [Indexed: 03/28/2024]
Abstract
Silicon vacancy centers (SiVs) in diamond have emerged as a promising platform for quantum sciences due to their excellent photostability, minimal spectral diffusion, and substantial zero-phonon line emission. However, enhancing their slow nanosecond excited-state lifetime by coupling to optical cavities remains an outstanding challenge, as current demonstrations are limited to ∼10-fold. Here, we couple negatively charged SiVs to sub-diffraction-limited plasmonic cavities and achieve an instrument-limited ≤8 ps lifetime, corresponding to a 135-fold spontaneous emission rate enhancement and a 19-fold photoluminescence enhancement. Nanoparticles are printed on ultrathin diamond membranes on gold films which create arrays of plasmonic nanogap cavities with ultrasmall volumes. SiVs implanted at 5 and 10 nm depths are examined to elucidate surface effects on their lifetime and brightness. The interplay between cavity, implantation depth, and ultrathin diamond membranes provides insights into generating ultrafast, bright SiV emission for next-generation diamond devices.
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Affiliation(s)
- Andrew
M. Boyce
- Department
of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States
| | - Hengming Li
- Department
of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States
| | - Nathaniel C. Wilson
- Department
of Physics, Duke University, Durham, North Carolina 27708, United States
| | - Deniz Acil
- Department
of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States
| | - Amirhassan Shams-Ansari
- John
A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Srivatsa Chakravarthi
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Christian Pederson
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Qixin Shen
- Department
of Physics, Duke University, Durham, North Carolina 27708, United States
| | - Nicholas Yama
- Department
of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Kai-Mei C. Fu
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
- Department
of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Marko Loncar
- John
A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Maiken H. Mikkelsen
- Department
of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States
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Stas PJ, Huan YQ, Machielse B, Knall EN, Suleymanzade A, Pingault B, Sutula M, Ding SW, Knaut CM, Assumpcao DR, Wei YC, Bhaskar MK, Riedinger R, Sukachev DD, Park H, Lončar M, Levonian DS, Lukin MD. Robust multi-qubit quantum network node with integrated error detection. Science 2022; 378:557-560. [DOI: 10.1126/science.add9771] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Abstract
Long-distance quantum communication and networking require quantum memory nodes with efficient optical interfaces and long memory times. We report the realization of an integrated two-qubit network node based on silicon-vacancy centers (SiVs) in diamond nanophotonic cavities. Our qubit register consists of the SiV electron spin acting as a communication qubit and the strongly coupled silicon-29 nuclear spin acting as a memory qubit with a quantum memory time exceeding 2 seconds. By using a highly strained SiV, we realize electron-photon entangling gates at temperatures up to 1.5 kelvin and nucleus-photon entangling gates up to 4.3 kelvin. We also demonstrate efficient error detection in nuclear spin–photon gates by using the electron spin as a flag qubit, making this platform a promising candidate for scalable quantum repeaters.
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Affiliation(s)
- P.-J. Stas
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Y. Q. Huan
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - B. Machielse
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
- AWS Center for Quantum Networking, Boston, MA 02210, USA
| | - E. N. Knall
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
| | - A. Suleymanzade
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - B. Pingault
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
- QuTech, Delft University of Technology, 2600 GA Delft, Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft, Netherlands
| | - M. Sutula
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - S. W. Ding
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
| | - C. M. Knaut
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - D. R. Assumpcao
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
| | - Y.-C. Wei
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - M. K. Bhaskar
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
- AWS Center for Quantum Networking, Boston, MA 02210, USA
| | - R. Riedinger
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
- Institut für Laserphysik und Zentrum für Optische Quantentechnologien, Universität Hamburg, 22761 Hamburg, Germany
- The Hamburg Centre for Ultrafast Imaging, 22761 Hamburg, Germany
| | - D. D. Sukachev
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
- AWS Center for Quantum Networking, Boston, MA 02210, USA
| | - H. Park
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - M. Lončar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
| | - D. S. Levonian
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
- AWS Center for Quantum Networking, Boston, MA 02210, USA
| | - M. D. Lukin
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
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Wang M, Sun H, Ye X, Yu P, Liu H, Zhou J, Wang P, Shi F, Wang Y, Du J. Self-aligned patterning technique for fabricating high-performance diamond sensor arrays with nanoscale precision. SCIENCE ADVANCES 2022; 8:eabn9573. [PMID: 36149948 PMCID: PMC9506708 DOI: 10.1126/sciadv.abn9573] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Accepted: 08/10/2022] [Indexed: 06/16/2023]
Abstract
Efficient, nanoscale precision alignment of defect center creation in photonics structures in challenges the realization of high-performance photonic devices and quantum technology applications. Here, we propose a facile self-aligned patterning technique based on conventional engineering technology, with doping precision that can reach ~15 nm. We demonstrate this technique by fabricating diamond nanopillar sensor arrays with high consistency and near-optimal photon counts. The sensor array achieves high yield approaching the theoretical limit, and high efficiency for filtering sensors with different numbers of nitrogen vacancy centers. Combined with appropriate crystal orientation, the system achieves a saturated fluorescence rate of 4.34 Mcps and effective fluorescence-dependent detection sensitivity of 1800 cps-1/2 . These sensors also show enhanced spin properties in the isotope-enriched diamond. Our technique is applicable to all similar solid-state systems and could facilitate the development of parallel quantum sensing and scalable information processing.
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Affiliation(s)
- Mengqi Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Haoyu Sun
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xiangyu Ye
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Pei Yu
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Hangyu Liu
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jingwei Zhou
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Pengfei Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Fazhan Shi
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Ya Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jiangfeng Du
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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