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Pinheiro T, Morais M, Silvestre S, Carlos E, Coelho J, Almeida HV, Barquinha P, Fortunato E, Martins R. Direct Laser Writing: From Materials Synthesis and Conversion to Electronic Device Processing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402014. [PMID: 38551106 DOI: 10.1002/adma.202402014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 03/18/2024] [Indexed: 04/25/2024]
Abstract
Direct Laser Writing (DLW) has been increasingly selected as a microfabrication route for efficient, cost-effective, high-resolution material synthesis and conversion. Concurrently, lasers participate in the patterning and assembly of functional geometries in several fields of application, of which electronics stand out. In this review, recent advances and strategies based on DLW for electronics microfabrication are surveyed and outlined, based on laser material growth strategies. First, the main DLW parameters influencing material synthesis and transformation mechanisms are summarized, aimed at selective, tailored writing of conductive and semiconducting materials. Additive and transformative DLW processing mechanisms are discussed, to open space to explore several categories of materials directly synthesized or transformed for electronics microfabrication. These include metallic conductors, metal oxides, transition metal chalcogenides and carbides, laser-induced graphene, and their mixtures. By accessing a wide range of material types, DLW-based electronic applications are explored, including processing components, energy harvesting and storage, sensing, and bioelectronics. The expanded capability of lasers to participate in multiple fabrication steps at different implementation levels, from material engineering to device processing, indicates their future applicability to next-generation electronics, where more accessible, green microfabrication approaches integrate lasers as comprehensive tools.
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Affiliation(s)
- Tomás Pinheiro
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Maria Morais
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Sara Silvestre
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Emanuel Carlos
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - João Coelho
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Henrique V Almeida
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Pedro Barquinha
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Elvira Fortunato
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Rodrigo Martins
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
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Lipateva T, Lipatiev A, Lotarev S, Shakhgildyan G, Fedotov S, Sigaev V. One-Stage Femtosecond Laser-Assisted Deposition of Gold Micropatterns on Dielectric Substrate. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6867. [PMID: 36234209 PMCID: PMC9571280 DOI: 10.3390/ma15196867] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/05/2022] [Revised: 09/26/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
In this study, a simple one-stage laser-assisted metallization technique based on laser-induced backside wet etching and laser-induced chemical liquid-phase deposition is proposed. It allows for the fabrication of gold micropatterns inside the laser-written trace on a glass substrate. The reduction and deposition of gold inside and outside the laser-ablated channel were confirmed. The presence of Au nanoparticles on the surface of the laser-written micropattern is revealed by atomic force microscopy. The specific resistivity of the gold trace formed by ultrafast light-assisted metal micropatterning on a dielectric glass substrate is estimated as 0.04 ± 0.02 mΩ·cm. The obtained results empower the method of the selective laser-assisted deposition of metals on dielectrics and are of interest for the development of microelectronic components and catalysts, heaters, and sensors for lab-on-a-chip devices.
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Li Y, Guo X, Wang S, Zhang S, Zhao Y, Guo D, Zhang C, Liu S, Cheng GJ, Liu F. High-Efficiency Copper Removal by Nitrogen Plasma-Assisted Picosecond Laser Processing. MICROMACHINES 2022; 13:1492. [PMID: 36144115 PMCID: PMC9504670 DOI: 10.3390/mi13091492] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Revised: 08/31/2022] [Accepted: 09/05/2022] [Indexed: 06/16/2023]
Abstract
Copper (Cu) removal efficiency is a key parameter in the processing of Cu-based electronic devices. Herein, a nitrogen plasma-assisted picosecond (ps) laser process for Cu removal is presented. Based on the cleaning and activation effect of nitrogen plasma on the surface of Cu film in ps-laser ablation, the removal efficiency can be significantly improved. Theoretically, the interaction mechanism between Cu and the ps-laser under the action of the plasma flow field is investigated by the dual temperature model (TTM) and finite element analysis (FEA). Meanwhile, the experimental results show that the angle of the plasma flow significantly affects the laser ablation of Cu. Small-angle plasma helps to improve the ps-laser processing precision of Cu, while large-angle plasma can effectively improve the ps-laser processing efficiency of Cu. Under the laser fluence of 2.69 J/cm2, the removal depth of the Cu film by a 30° plasma-assisted ps-laser is 148% higher than that by the non-plasma-assisted ps-laser, which indicates the application potential of nitrogen plasma in improving the laser ablation process.
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Affiliation(s)
- Yunfan Li
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Xuanqi Guo
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Shuai Wang
- Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Shizhuo Zhang
- Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Yilin Zhao
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Dingyi Guo
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Chen Zhang
- Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Sheng Liu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Gary J. Cheng
- School of Industrial Engineering, Purdue University, West Lafayette, IN 47906, USA
| | - Feng Liu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
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