Fundamental analyses of fabrication-tolerant high-performance silicon mode (de)multiplexer

Ultra-broadband multimode fiber-to-chip edge coupler based on periodically segmented waveguides

Mode-division multiplexing (MDM) technology demonstrates a bright outlook for enhancing the capacity of chip-scale or fiber-based optical communication. Nevertheless, the fiber-to-chip MDM optical interconnects are hindered by the considerable mode mismatch and inter-modal cross talk between the few-mode fiber (FMF) and on-chip few-mode waveguide (FMW). In this Letter, a new, to the best of our knowledge, multimode coupling solution based on periodically segmented waveguides for the MDM system is proposed, which achieves efficient conversion between LP01, LP11a, and LP11b modes in FMF and E11, E21, and E12 modes in FMW with low refractive index difference. The simulation results show that the coupling loss is less than 0.41, 0.27, and 0.90 dB for the three modes, over the wavelength range of 1100-1800 nm. The fabricated device based on a polymer platform shows low fiber-to-chip coupling losses of less than 1.8, 1.7, and 3.0 dB, respectively, over a 130 nm wavelength. The presented scheme provides a competitive solution for realizing the ultra-efficient integration of prospective fiber-chip optical interconnections and communications.

Design of the Bimodal Grating Sensor with a Built-In Mode Demultiplexer

This new sensor design provides good volume sensitivity (around 1600 nm/RIU) via collinear diffraction by the asymmetric grating placed in the waveguide vicinity. It provides the mode transformation between the fundamental TE₀ and the first TE₁ modes of the silicon wire (0.22 μm by a 0.580 μm cross-section) in the water environment. In order to provide the wavelength interrogation with a better extinction ratio for the measuring signal, the grating design is incorporated with the mode filter/demultiplexer. It selects, by the compact directional coupler (maximum 4 μm wide and 14 μm long), only the first guided mode (close to the cutoff) and transmits it with small excess loss (about -0.5 dB) to the fundamental TE₀ mode of the neighboring single mode silicon wire, having variable curvature and width ranging from 0.26 μm to 0.45 μm. At the same time, the parasitic crosstalk of the input TE₀ mode is below -42 dB, and that provides the option of simple and accurate wavelength sensor interrogation. The environment index is measured by the spectral peak position of the transmitted TE₀ mode power in the output single mode silicon wire waveguide of the directional coupler. This type of optical sensor is of high sensitivity (iLOD~ 2.1 × 10^-4 RIU for taking into account the water absorption at 1550 nm) and could be manufactured by modern technology and a single-step etching process.

1 × 2 mode-independent polymeric thermo-optic switch based on a Mach-Zehnder interferometer with a multimode interferometer

We present the design and performances of a broadband 1 × 2 mode-independent thermo-optic (TO) switch based on Mach-Zehnder interferometer (MZI) with multimode interferometer (MMI). The MZI adopts a Y-branch structure as the 3-dB power splitter and a MMI as the coupler, which are designed to be insensitive to the guided modes. By optimizing the structural parameters of the waveguides, mode-independent transmission and switching functions for E₁₁ and E₁₂ modes can be implemented in the C + L band, and the mode content of the outputs is the same as the mode content of the inputs. We proved the working principle of our design based on polymer platform, which was fabricated by using ultraviolet lithography and wet-etching methods. The transmission characteristics for E₁₁ and E₁₂ modes were also analyzed. With the driving power of 5.9 mW, the measured extinction ratios of the switch for E₁₁ and E₁₂ modes are larger than 13.3 dB and 13.1 dB, respectively, over a wavelength range of 1530 nm to 1610 nm. The insertion losses of the device are 11.7 dB and 14.2 dB for E₁₁ and E₁₂ modes, respectively, at 1550 nm wavelength. The switching times of the device are less than 840 µs. The presented mode-independent switch can be applied in reconfigurable mode-division multiplexing systems.

High density vertical optical interconnects for passive assembly

The co-packaging of optics and electronics provides a potential path forward to achieving beyond 50 Tbps top of rack switch packages. In a co-packaged design, the scaling of bandwidth, cost, and energy is governed by the number of optical transceivers (TxRx) per package as opposed to transistor shrink. Due to the large footprint of optical components relative to their electronic counterparts, the vertical stacking of optical TxRx chips in a co-packaged optics design will become a necessity. As a result, development of efficient, dense, and wide alignment tolerance chip-to-chip optical couplers will be an enabling technology for continued TxRx scaling. In this paper, we propose a novel scheme to vertically couple into standard 220 nm silicon on insulator waveguides from 220 nm silicon nitride on glass waveguides using overlapping, inverse double tapers. Simulation results using Lumerical's 3D Finite Difference Time Domain solver are presented, demonstrating insertion losses below -0.13 dB for an inter-chip spacing of 1 µm; 1 dB vertical and lateral alignment tolerances of approximately 2.6 µm and ± 2.8 µm, respectively; a greater than 300 nm 1 dB bandwidth; and 1 dB twist and tilt tolerances of approximately ± 2.3 degrees and 0.4 degrees, respectively. These results demonstrate the potential of our coupler for use in co-packaged designs requiring high performance, high density, CMOS compatible out of plane optical connections.

Broadband and efficient multi-mode fiber-chip edge coupler on a silicon platform assisted with a nano-slot waveguide

Mode-division multiplexing (MDM) has been extensively utilized to expand the capacity of chip-scale or fiber-based optical communication, whereas it is still challenging to implement the MDM for fiber-chip optical interconnects due to the huge mode mismatch between few-mode fiber (FMF) and multi-mode waveguide. In this work, we propose and design a silicon integrated six-mode edge coupler assisted with a slot waveguide, which achieves the efficient direct conversion of multiple modes between the waveguide and fiber in a broad bandwidth. Based on the principle of mode conversion, this edge coupler enables the mode conversion between six linear polarization (LP) modes (i.e. LPx/y01, LPx/y11a, LPx/y11b) in FMF and six on-chip waveguide modes (i.e. TE₀, TE₁, TE₂, TM₀, TM₁, TM₂) with low insertion loss, low mode crosstalk and broad bandwidth. The obtained results show that over the whole C-band the efficiency of mode conversion is higher than 98% and the mode crosstalk is low than -19 dB, while the total coupling loss is higher than 85%. The favorable results offer an important reference for designing related broadband photonic devices, and the presented scheme could be potentially exploited to further increase the transmission capability for prospective fiber-chip optical interconnections and communications.

Phase-resolved all-fiber reflection-based s-NSOM for on-chip characterization

We report on a phase-resolved, reflection-based, scattering-type near-field scanning optical microscope technique with a convenient all-fiber configuration. Exploiting the flexible positioning of the near-field probe, our technique renders a heterodyne detection for phase measurement and point-to-point frequency-domain reflectometry for group index and loss measurement of waveguides on a chip. The important issue of mitigating the measurement errors due to environmental fluctuations along fiber-optic links has been addressed. We perform systematic measurements on different types of silicon waveguides which demonstrate the accuracy and precision of the technique. With a phase compensation approach on the basis of a common-path interferometer, the phase drift error is suppressed to ∼ 0.013°/s. In addition, characterizations of group index, group velocity dispersion, propagation loss, insertion loss, and return loss of component waveguides on a chip are all demonstrated. The measurement accuracy of the propagation loss of a ∼ 0.2 cm long nano-waveguide reaches ±1 dB/cm. Our convenient and versatile near-field characterization technique paves the way for in-detail study of complex photonic circuits on a chip.