29 GHz single-mode vertical-cavity surface-emitting lasers passivated by atomic layer deposition

26.5625 Gbaud PAM-4 short-reach transmission at 75°C using 850 nm VCSELs with strategic oxide guiding layer positioning

This article presents an all-epitaxy approach to reduce the root mean square spectral width (ΔλR M S) of 850 nm oxide-confined vertical cavity surface-emitting lasers (VCSELs) with a large aperture of 7 µm through strategic optimization of the oxide guiding layer within the epitaxy structure. At 75°C, the VCSEL demonstrates a ΔλR M S of ∼0.3 nm at a bias current of 7.5 mA. Furthermore, the VCSEL achieves successful transmission of 26.5625 Gbaud PAM-4 modulation over a short-reach (SR) OM4 fiber link while maintaining a TDECQ budget below the 4.5 dB specified by 50G IEEE Ethernet standards.

Zone-addressable 20 × 20 940 nm VCSEL array with a 5-bit binary number pattern

This article presents a monolithically zone-addressable 20 × 20 940 nm vertical-cavity surface-emitting laser (VCSEL) array with a binary number pattern design for sensing applications. The emitters in this VCSEL array have a uniquely designed binary pattern design, with each row representing a 5-bit pattern designed to aid pattern-matching algorithms to deduce the shape and depth information efficiently. Approximately 200 VCSELs are arranged in four individually addressable light-emitting zones, with ∼50 emitters in each zone. Each zone generates laser pulses up to 7.2 W in peak power.

High uniformity red µ-LED array with a current efficiency of 2.6 cd/A and ns-level response time

This paper demonstrates an AlGaInP-based 620-nm red micro-light-emitting-diode (µ-LED) array and studies the enhancement effect of the surface treatments using (NH₄)₂Sx solutions by comparing the characteristics of µ-LED arrays with and without the (NH₄)₂Sx treatment. Furthermore, our µ-LED array demonstrates a measurement of the current efficiency (2.6 cd/A), which improves the light output uniformity. Also, we apply a setup for measuring the response time at the fast ns-level to analyze the effect of passivation in AlGaInP-based µ-LED arrays.

40.1-GHz sub-freezing 850-nm VCSEL: microwave extraction of cavity lifetimes and small-signal equivalent circuit modeling

We present an 850-nm vertical-cavity surface-emitting laser (VCSEL) constructed for a wide operating temperature range from 25°C to -50°C sub-freezing temperature, demonstrating 40.1-GHz at -50°C. The optical spectra, junction temperature, and microwave equivalent circuit modeling of a sub-freezing 850-nm VCSEL between -50°C and 25°C are also discussed. Reduced optical losses, higher efficiencies, and shorter cavity lifetimes at sub-freezing temperatures are the leading causes of the improved laser output powers and bandwidths. The e-h recombination lifetime and the cavity photon lifetime are shortened to 113 and 4.1 ps, respectively. Could potentially supercharge VCSEL-based sub-freezing optical links for applications in frigid weather, quantum computing, sensing, aerospace, etc.