Wavelength-versatile deep-red laser source by intracavity frequency converted Raman laser

KTA-OPO for 1742 nm laser generation driven by a composite Nd:YVO4-based self-Raman laser

In this work, a double-end diffusion bonded Nd:YVO4 self-Raman laser was designed to drive an intracavity, noncritically-phase-matched KTiOAsO4 (KTA) optical parametric oscillator (OPO). Both conversion efficiency and output power at 1.7 µm (the wavelength of the OPO signal field) were improved by effectively reducing the thermal lens effect and increasing the effective length of self-Raman medium. At an incident pump power of 15.4 W, the output power for 1742 nm output laser reached 2.16 W with a conversion efficiency of 14%, and the output having a pulse width of 10.5 ns and a pulse repetition frequency of 90 kHz. The competition between the OPO and cascaded Raman laser was observed when the incident pump power was above 12.4 W. The results highlight that in order to improve output power at 1742 nm, it is critical that both the cascaded, second-Stokes field at 1313 nm and the signal field generated at 1534 nm from the 1064 nm field driving the KTA-OPO be minimized, if not completely suppressed. This laser system combining the processes of stimulated Raman scattering and optical parametric oscillation for the generation of laser emission at 1742 nm may find significant application across a broad range of fields including biological engineering, laser therapy, optical coherence tomography and for the generation of mid-infrared laser wavelengths.

Nanosecond pulsed deep-red Raman laser based on the Nd:YLF dual-crystal configuration

A highly powerful nanosecond pulsed deep-red laser was demonstrated by intracavity second-harmonic generation of an actively Q-switched Nd:YLF dual-crystal-based KGW Raman laser in a critically phase-matched lithium triborate (LBO) crystal. The first-Stokes fields at 1461 and 1490 nm driven by the 1314 nm fundamental laser were firstly produced by accessing the Raman shifts of 768 and 901 cm-1 in the KGW crystal, respectively, and thereafter converted to the deep-red emission lines at 731 and 745 nm by finely tuning the phase-matching angle of the LBO crystal and carefully realigning the resonator. Integrating the benefits of the Nd:YLF dual-crystal configuration and the meticulously designed L-shaped resonator, this deep-red laser system delivered the maximum average output powers of 5.2 and 7.6 W with the optical power conversion efficiencies approaching 6.3% and 9.2% under the optimal pulse repetition frequency of 4 kHz, respectively. The pulse durations of 6.7 and 5.5 ns were acquired with the peak powers up to approximately 190 and 350 kW, respectively, and the resultant beam qualities were determined to be near-diffraction-limited with M2 ≈ 1.5.

Advanced Solid-State Lasers: feature issue introduction

This Joint Issue of Optics Express and Optical Materials Express features 40 peer-reviewed articles written by authors who participated in the Advanced Solid State Lasers Conference, part of the Optica Laser Congress and Exhibition held in Barcelona, Spain from December 11-15, 2022. This review provides a brief summary of these articles covering the latest developments in laser host and nonlinear crystals, structured materials, fiber lasers and amplifiers, ultrafast mode-locked lasers and optical parametric amplifiers, frequency-doubled Raman lasers, vortex beams, and novel concepts in laser design.

High-repetition-rate and high-beam-quality all-solid-state nanosecond pulsed deep-red Raman laser

We report on a high-repetition-rate and high-beam-quality all-solid-state nanosecond pulsed deep-red laser source by intracavity second harmonic generation of the actively Q-switched Nd:YVO4/KGW Raman laser. The polarization of the 1342 nm fundamental laser was aligned with the Ng and Nm axes of KGW crystal for accessing the eye-safe Raman lasers at 1496 and 1526 nm, respectively. With the aid of the elaborately designed V-shaped resonator and the composite Nd:YVO4 crystal, excellent mode matching and good thermal diffusion have been confirmed. Under an optimal pulse repetition frequency of 25 kHz, the average output powers of the Raman lasers at 1496 and 1526 nm were measured to be 3.7 and 4.9 W with the superior beam quality factor of M2 = 1.2, respectively. Subsequently, by incorporating a bismuth borate (BIBO) crystal, the deep-red laser source was able to lase separately two different spectral lines at 748 and 763 nm, yielding the maximum average output powers of 2.5 and 3.2 W with the pulse durations of 15.6 and 11.3 ns, respectively. The resulting beam quality was determined to be near-diffraction-limited with M2 = 1.28.

Deep-red laser operation of cleaved single-crystal plates of Eu:CsGd(MoO4)2 molybdate

We report on the first deep-red laser operation of a heavily Eu³⁺-doped cesium gadolinium double molybdate crystal with a perfect cleavage. A 17 at. % Eu:CsGd(MoO₄)₂ laser based on cleaved single-crystal plates generated a maximum continuous-wave output power of 212 mW at 703.1 nm (⁵D₀ → ⁷F₄ transition) with a slope efficiency of 30.1%, a low laser threshold of 51 mW, linear polarization, and a beam quality factor M² = 1.6-1.7. This monoclinic crystal is promising for deep-red microchip lasers.