Polarized angle-resolved spectral reflectometry for real-time ultra-thin film measurement

Incoherent partial superposition modeling for single-shot angle-resolved ellipsometry measurement of thin films on transparent substrates

Ellipsometric measurement of transparent samples suffers from substrate backside reflection challenges, including incoherent and partial superposition issues. The recently developed angle-resolved ellipsometry (ARE) can naturally eliminate the backside reflections of substrates with a micro-spot equivalent thickness or thicker; however, for thinner substrates, ARE working with general incoherent backside reflection models shows significant inaccuracy or measurement failure. In this paper, an incoherent partial superposition (IPS) model is proposed to characterize the optical superposition effect between the frontside and uncertain backside reflections from an unknown substrate. IPS introduces a cosine-like correction of the backside reflection, corresponding to the overlapping-area change of backside and frontside reflections along with incident angles. Benefiting from ARE's wide-angle spectral imaging capability, IPS achieves single-shot measurement of thin film thicknesses on transparent substrates of unknown thickness. An ARE system was built and calibrated regarding the linear relationship between the cosine-corrected angular frequencies and substrate thicknesses. Then, commercial ITO films on glasses of different thicknesses ranging from 200 to 1000 µm were measured. Experimental results show that IPS-ARE results in a root-mean-square accuracy error of ∼1 nm in film thickness measurement and provides a ∼77% error reduction from general incoherent backside reflection models.

Thin film characterization by learning-assisted multi-angle polarized microscopy

Thin film characterization is a necessary step in the semiconductor industry and nanodevice fabrication. In this work, we report a learning-assisted method to conduct the measurement based on a multi-angle polarized microscopy. By illuminating the film with a tightly focused vectorial beam with space-polarization nonseparability, the angle-dependent reflection coefficients are encoded into the reflected intensity distribution. The measurement is then transformed into an optimization problem aiming at minimizing the discrepancy between measured and simulated image features. The proposed approach is validated by numerical simulation and experimental measurements. As the method can be easily implemented with a conventional microscope, it provides a low cost solution to measure film parameters with a high spatial resolution and time efficiency.

Angle-resolving spectral ellipsometry using structured light for direct measurement of ellipsometric parameters

We propose a compact angle-resolving spectral ellipsometry. Using the structured light generated from a digital micro-mirror device (DMD), what we believe to be a novel pattern is illuminated to the back focal plane of the high numerical aperture (NA) objective lens. As a result, ellipsometric parameters with fine resolution of both the wavelength and incidence angle domain can be directly measured. The incidence angle can be resolved by resolution under 1° ranging from 35° to 59° by the radius of the projected images. A spectrometer as a detector enables acquisition by the resolution of 0.7 nm from 410 to 700 nm, and the fiber reduces measurement spot size to a single micrometer. Additionally, the measurement process does not require any rotating optical components or moving parts, needing only digital modification of the projected image. This simplifies the sequences and reduces the measurement time. The 2D (angle of incidence and spectral domain) ellipsometric parameter plane measured by the proposed method was used to measure the thickness of various samples. The measurement result was verified in comparison with a commercial ellipsometer. The accuracy and precision of the result show that the proposed method is capable of precise measurement of thin films.