Genetic algorithm-based optical proximity correction for DMD maskless lithography

Energy-efficient dispersion compensation for digital micromirror device

Due to the wave nature of light, the diffraction pattern generated by an optical device is sensitive to the shift of wavelength. This fact significantly compromises the digital micromirror device (DMD) in applications, such as full-color holographic display and multi-color fluorescence microscopy. The existing dispersion compensation techniques for DMD involve adding diffractive elements, which causes a large amount of waste of optical energy. Here, we propose an energy-efficient dispersion compensation method, based on a dispersive prism, for DMD. This method simulates the diffraction pattern of the optical fields reflected from the DMD with an angular spectrum model. According to the simulation, a prism and a set of optical components are introduced to compensate for the angular dispersion of DMD-modulated optical fields. In the experiment, our method reduced the angular dispersion, between the 532 nm and 660 nm light beams, by a factor of ∼8.5.

Optical proximity correction of hot-spot patterns with subwavelength size in DMD maskless projection lithography

When the critical dimension (CD) of resist patterns nears the resolution limit of the digital micromirror device (DMD) maskless projection lithography (DMD-MPL), significant distortion can emerge in the silicon wafer due to the optical proximity effect (OPE). The significant distortion (breakpoints, line-end scaling, corner rounding, etc.) between resist patterns and target patterns results in reduced lithographic quality. To address this issue, we have proposed a pixel-based optical proximity correction (PB-OPC) method used for the hot-spot patterns with subwavelength sizes specifically designed for DMD-MPL. Employing an end-to-end learning neural network, the PB-OPC algorithm is both straightforward and efficient. A well-trained U-net framework facilitates the mapping from unoptimized masks to optimized masks. Experimental exposure trials have demonstrated that this method not only corrects OPC in general patterns but also effectively rectifies hot-spot patterns. The pattern error (PE) value can be reduced by about 30% in the design layouts. We believe this approach holds the potential to enhance the resolution and fidelity of resist patterns in DMD maskless lithography.