Logic operation and all-optical switch characteristics of graphene surface plasmons

Lossless and stable propagation of surface plasmon polaritons in quasi-P T potential

We propose a scheme to study the propagation properties of surface plasmon polaritons (SPPs) in a dielectric/metal/dielectric waveguide with a refraction index of the dielectric modulated as quasi-P T-symmetric potentials. By treating the propagation loss of SPPs as the absorption background, we prove that a total gain-loss balance system which allows SPPs losslessly and stably propagating can be achieved. In addition, the propagation robustness of single peak and dipole peak transverse structured SPPs in quasi-P T-symmetric potentials under noise perturbations is discussed. The results may have certain significance for expanding applications of non-Hermitian optics in micro-/nano-optical information processing.

Three peak metamaterial broadband absorbing materials based on ZnSe-Cr-InAs stacked disk arrays

Metamaterial absorbers show great potential in many scientific and technological applications by virtue of their sub-wavelength and easy-to-adjust structure, with bandwidth as an important standard to measure the performance of the absorbers. In this study, our team designed a new broadband absorber, which consists of an indium arsenide (InAs) disk at the top, a zinc selenide (ZnSe)-chromium (Cr) stacked disk in the middle and a metal film at the bottom. Simulation results show that the absorber has remarkable absorptivity properties in the mid-long infrared band. In a wavelength range of 5.71-16.01 μm, the average absorptivity is higher than 90%. In the band of 5.86-15.49 μm, the absorptivity is higher than 95%. By simulating the electromagnetic field diagram at each resonant frequency, the reason for high broadband absorptivity is obtained. We also constructed Poynting vector diagrams to further elucidate this phenomenon. Next, we analyzed the influence of different materials and structural parameters on absorptivity properties and tested spectral response at different polarization angles and oblique incidence of the light source in the TM and TE modes. When the source is normally incident, the absorber shows polarization insensitivity. When the angle is 40°, absorptivity is still high, indicating that the absorber also possesses angle insensitivity. The broadband absorber proposed by us has good prospects in infrared detection and thermal radiators.

Temperature-tunable terahertz metamaterial device based on VO2 phase transition principle

Terahertz devices play an irreplaceable role in the development of terahertz technology. However, at present, it is difficult for most natural materials to respond in the terahertz band, making the devices made of them perform poorly. In order to realize the diversity and tunability of device functions, we designed a terahertz metamaterial device composed of the thermally-induced phase change material VO2. The device structure is composed of a Au bottom layer, a SiO2 dielectric layer and a VO2 top layer. Through software simulation, we found that when T = 313 K, the device has complete reflection ability in the whole terahertz band. When T = 342 K, the average absorptivity is above 95% in the ultra-wide band range of 4.71-9.41 THz, and the absorptivity reaches an amazing 0.99999 at 6.31 THz. Thus, the maximum thermal modulation range of the device is 0.001-0.99999. The Bruggeman effective medium theory clarifies the phase transition characteristics of vanadium dioxide. The Drude model establishes the functional relationship between the conductivity of vanadium dioxide and temperature. The basic principle of high absorption was described using the impedance matching theory. We also drew the electric field intensity diagram during the temperature rise of the device to further confirm the reason for the change in the device performance. In addition, the influence of the absence of different structural layers on the absorptivity was simulated, which reflected the role of each layer structure more intuitively. We also explored the influence of the geometric size of the device on the absorptivity, which provided a certain reference value for practical application. In short, we have designed a tunable terahertz device with simple structure, high absorptivity, and wide absorption bandwidth, which can be used in the fields of energy collection, electromagnetic stealth, and modulation.

Design and performance study of a multiband metamaterial tunable thermal switching absorption device based on AlCuFe and VO2

In this paper, we propose a multiband adjustable metamaterial absorption device based on a Dirac semimetal (BDS) AlCuFe and a thermally controlled phase-change material VO2. The absorption device has an axially symmetric structure, resulting in polarization-independent characteristics, and when VO2 is in a high-temperature metal state, ultra-high absorption rates and sensitives at frequencies of M1 = 2.89 THz, M2 = 7.53 THz, M3 = 7.97 THz, and M4 = 9.02 THz are achieved. Using a parameter inversion method, we calculated the impedance of the absorber, proving that it achieves impedance matching and produces perfect absorption in the resonance region. Additionally, we changed the physical and chemical parameters of the absorption device, demonstrating the device's excellent tunability and manufacturing tolerance. Furthermore, by lowering the temperature of VO2 to that of a low dielectric state, additional resonant peaks with ultra-high absorption rates at frequencies M5 = 5.62 THz, M6 = 7.16 THz, M7 = 7.64 THz, and M8 = 8.80 THz were obtained, broadening the absorption band of the device. Lastly, we investigated the detection sensitivity of the device by changing the external refractive index, resulting in a maximum sensitivity of 2229 GHz RIU-1. To sum up, the absorption device has great application potential in the fields of communication, sensing, temperature detection and photoelectric instruments.

Broadband Solar Absorber and Thermal Emitter Based on Single-Layer Molybdenum Disulfide

In recent years, solar energy has become popular because of its clean and renewable properties. Meanwhile, two-dimensional materials have become a new favorite in scientific research due to their unique physicochemical properties. Among them, monolayer molybdenum disulfide (MoS2), as an outstanding representative of transition metal sulfides, is a hot research topic after graphene. Therefore, we have conducted an in-depth theoretical study and design simulation using the finite-difference method in time domain (FDTD) for a solar absorber based on the two-dimensional material MoS2. In this paper, a broadband solar absorber and thermal emitter based on a single layer of molybdenum disulfide is designed. It is shown that the broadband absorption of the absorber is mainly due to the propagating plasma resonance on the metal surface of the patterned layer and the localized surface plasma resonance excited in the adjacent patterned air cavity. The research results show that the designed structure boasts an exceptional broadband performance, achieving an ultra-wide spectral range spanning 2040 nm, with an overall absorption efficiency exceeding 90%. Notably, it maintains an average absorption rate of 94.61% across its spectrum, and in a narrow bandwidth centered at 303 nm, it demonstrates a near-unity absorption rate, surpassing 99%, underscoring its remarkable absorptive capabilities. The weighted average absorption rate of the whole wavelength range (280 nm-2500 nm) at AM1.5 is above 95.03%, and even at the extreme temperature of up to 1500 K, its heat radiation efficiency is high. Furthermore, the solar absorber in question exhibits polarization insensitivity, ensuring its performance is not influenced by the orientation of incident light. These advantages can enable our absorber to be widely used in solar thermal photovoltaics and other fields and provide new ideas for broadband absorbers based on two-dimensional materials.

Dual-Band All-Optical Logic Gates by Coherent Absorption in an Amorphous Silicon Graphene Metasurface

The dual-band polarization-independent all-optical logic gate by coherent absorption effect in an amorphous silicon (a-Si) graphene metasurface is investigated theoretically and numerically. Taking the substrate effect into consideration, the coherent perfect absorption condition of the a-Si graphene metasurface is derived on the basis of the Cartesian multipole method. The coherent nearly perfect absorption of the a-Si graphene metasurface is realized by the interference of multipole moments and the interband transition of monolayer graphene, achieving peak values of 91% and 92% at 894.5 nm and 991.5 nm, respectively. The polarization independence of the coherent absorption is revealed due to the center symmetry of the structure of the a-Si graphene metasurface. The dual-band polarization-independent all-optical XOR and OR logic gates are implemented at 894.5 nm and 991.5 nm by the a-Si graphene metasurface based on the coherent nearly perfect absorption, which has the opportunity to be utilized in all-optical computing, all-optical data processing, and future all-optical networks.